N AND P MOSFET Search Results

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage

marking code R

Abstract: MARKING CODE W
Contextual Info: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

CMUDM7590

Abstract: on semiconductor marking code sot CMUDM3590
Contextual Info: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

MOSFET P-channel SOT-23

Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Contextual Info: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

CMSDM7590

Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
Contextual Info: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

Contextual Info: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance

Contextual Info: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN

uPA67

Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T
Contextual Info: DUAL N & P CHANNEL SMALL SIGNAL MOSFETS µPA500 & µPA600 SERIES • DUAL N CHANNEL, DUAL P CHANNEL AND A COMBINED N AND P CHANNEL • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V N Type 1 5 1 2 P Type 2 4 5 3 1 N Type 4

40841

Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Contextual Info: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

Contextual Info: Complementary MOSFET ELM14615AA-N •General Description ELM14615AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. With N-channel(N-ch) and P-channel(P-ch) packed in one IC.ELM14615AA-N also includes ESD-protected function.

TD3001

Contextual Info: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

TC6215

Contextual Info: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels

marking code V6 33 surface mount diode

Abstract: marking code V6 31 surface mount diode IRF7350 IRF7350P Dual N P-Channel
Contextual Info: PD - 94226B IRF7350 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 3 6 D2 4 5 D2 P -C H A N N E L M O S F E T N-Ch P-Ch VDSS 100V

IRF7350

Abstract: f-7101
Contextual Info: PD - 94226B IRF7350 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 3 6 D2 4 5 D2 P -C H A N N E L M O S F E T N-Ch P-Ch VDSS 100V

Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

TC2320TG

Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
Contextual Info: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low

marking code CT

Abstract: "MARKING CODE CT" SOT-963
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for

Contextual Info: SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features • Low VGS th : VGS(th)=1.0~3.0V  Small footprint due to small package  Low RGDS(on): N-ch, RDS(on)=24m (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66m (@ VGS=-10V, ID=-2.7A)

RTJC

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

FDMJ1032C

Abstract: marking 032 SC-75 Dual N & P-Channel
Contextual Info: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement