N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Search Results

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
MGN1D050603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-6/-3V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MTC3585G6 Abstract: MTC3585 Contextual Info: Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585G6 Description The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single	Original	C416G6 MTC3585G6 MTC3585G6 UL94V-0 MTC3585	PDF
single P-Channel mosfet sot-26 Abstract: VGS-12V N-Channel mosfet sot-26 Contextual Info: Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585N6 Description The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single	Original	C416N6 MTC3585N6 MTC3585N6 OT-26 OT-26 MTC358ny UL94V-0 single P-Channel mosfet sot-26 VGS-12V N-Channel mosfet sot-26	PDF
2SK1672 Abstract: 2SK1533 2sk2280 2SK228 Contextual Info: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully	Original	2SK1194 2SK1195 2SK1533 2SK1672 2SK1861 2SK1931 2SK2177 2SK2178 2SK2179 2SK2279 2sk2280 2SK228	PDF
5806SS Abstract: DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S Contextual Info: CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC5806Q8 Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8	Original	C407Q8 MTC5806Q8 MTC5806Q8 UL94V-0 5806SS DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S	PDF
4503ss Abstract: 24v 6A mosfet MTC4503Q8 4503ss equivalent 24V 1A mosfet 4503s Contextual Info: CYStech Electronics Corp. Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8	Original	C384Q8 MTC4503Q8 MTC4503Q8 UL94V-0 4503ss 24v 6A mosfet 4503ss equivalent 24V 1A mosfet 4503s	PDF
4501ss Abstract: MTC4501Q8 C385Q8 CYStech Electronics N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4501s Contextual Info: CYStech Electronics Corp. Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8	Original	C385Q8 MTC4501Q8 MTC4501Q8 UL94V-0 4501ss C385Q8 CYStech Electronics N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4501s	PDF
SI4532DY Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z Contextual Info: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	Si4532DY -30Voduct F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z	PDF
NDH8320C Contextual Info: N December 1996 NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	Original	NDH8320C NDH8320C	PDF
Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very	Original	Si4532DY	PDF
Contextual Info: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very	Original	Si4532DY	PDF
D665 Abstract: SI4532DY w992 Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very	Original	Si4532DY D665 w992	PDF
Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very	Original	Si4532DY	PDF
N P CHANNEL dual POWER MOSFET Abstract: NDH8320C Contextual Info: N September 1996 PRELIMINARY NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	Original	NDH8320C NDH8320C N P CHANNEL dual POWER MOSFET	PDF
NDH8520C Contextual Info: N September 1996 PRELIMINARY NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	Original	NDH8520C NDH8520C	PDF

Si4539DY Abstract: SOIC-16 Contextual Info: Si4539DY Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very	Original	Si4539DY SOIC-16	PDF
Contextual Info: Si4539DY Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very	Original	Si4539DY	PDF
NDS9943 Contextual Info: N February 1996 NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very	Original	NDS9943 NDS9943	PDF
4-221 Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET Contextual Info: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET	PDF
Contextual Info: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	NDS9952A	PDF
NDS9952A Contextual Info: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	NDS9952A NDS9952A	PDF
NDS9952A Contextual Info: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	NDS9952A NDS9952A	PDF
nds9942 Contextual Info: National & Semiconductor" May 1996 NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	NDS9942 nds9942	PDF
F011 Abstract: F63TNR F852 L86Z NDS9952A Contextual Info: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	Original	NDS9952A F011 F63TNR F852 L86Z NDS9952A	PDF
8928a Abstract: FDS8928A SOIC-16 1130 pch Contextual Info: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very	Original	FDS8928A 8928a FDS8928A SOIC-16 1130 pch	PDF

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Search Results

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Result Highlights (5)

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheets Context Search

MTC3585G6

single P-Channel mosfet sot-26

2SK1672

5806SS

4503ss

4501ss

SI4532DY

NDH8320C

D665

N P CHANNEL dual POWER MOSFET

NDH8520C

Si4539DY

NDS9943

4-221

NDS9952A

NDS9952A

nds9942

F011

8928a