N CHANNEL ENHANCED MOSFET Search Results

CMLDM7003E

Abstract: CMLDM7003JE CMLDM7003J
Contextual Info: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel

Fair-Rite ATC

Abstract: B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 SD2923 f-30MHz
Contextual Info: SD2923 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 300W MIN. WITH 16 dB GAIN @ 30 MHz . THERMALLY ENHANCED PACKAGING DESCRIPTION The SD2923 is a gold metallized N-Channel MOS

fast recovery diode 600v 5A

Contextual Info: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

7A600V

Abstract: DB-186 195mH
Contextual Info: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

Contextual Info: TAK CHEONG N-Channel Power MOSFET 4A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

N-Channel mosfet 600v 1a

Abstract: DB-181
Contextual Info: TAK CHEONG N-Channel Power MOSFET 2.1A, 600V, 5.6Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

diode marking 41a on semiconductor

Contextual Info: TAK CHEONG N-Channel Power MOSFET 4.1A, 600V, 2.5Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

Contextual Info: TAK CHEONG N-Channel Power MOSFET 7.2A, 650V, 1.5Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

db 182

Abstract: marking code diode DU
Contextual Info: TAK CHEONG N-Channel Power MOSFET 1.9A, 650V, 7.5Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

SiA511DJ-T1-GE3

Abstract: SC-70-6 sia511dj "MARKING CODE G2"
Contextual Info: New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area

Si1557DH

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

Si1557DH

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

74592

Abstract: 74592 datasheet SC-70-6 SiA511DJ-T1-GE3 S-80436-Rev 74592 application notes
Contextual Info: New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area

Contextual Info: CEDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for

651b

Abstract: fdmc720
Contextual Info: FDMC7208S Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ Features General Description Q1: N-Channel This device includes two 30V N-Channel MOSFETs in a dual Power 33 3 mm X 3 mm MLP package. The package is enhanced for exceptional thermal performance.

650 DIODE

Abstract: A4 marking diode DB200 650VVGS
Contextual Info: TAK CHEONG N-Channel Power MOSFET 7.2A, 650V, 1.5Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

Electronic Lamp Ballasts

Abstract: DB201
Contextual Info: TAK CHEONG N-Channel Power MOSFET 8A, 600V, 1.15Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

tff4n60

Contextual Info: TAK CHEONG N-Channel Power MOSFET 4A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source 1 General Description 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

Contextual Info: CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for

C702E

Contextual Info: CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for

Contextual Info: CEDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for

Contextual Info: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state