N CHANNEL MOSFET MARKING 3B Search Results

Contextual Info: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S

TPCF8A01

Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mÙ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

FS10UM-5

Abstract: 3DG5 FS10UM5 K775 MAX240 3d fs 45 1.5A 150V power mosfet
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 OUTLINE DRAWING Dimensions in mm 0@ © © D © • V d s s . GATE DRAIN SOURCE DRAIN 250V • rDS (ON (MAX) .0 .5 2 Í2

MOSFET TOSHIBA 2SK

Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
Contextual Info: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.

12L marking

Contextual Info: A Product Line of Diodes Incorporated PAM2319 DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER Description Pin Assignments The PAM2319 is a dual step-down current-mode, DC-DC converter. At heavy load, the constantf requency PWM control performs excellent stability and transient response. To ensure the longest

GS 069 LF

Contextual Info: PD-9.913A International 3BR Rectifier IRF9Z34S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34S • Low-profile through-hole (IRF9Z34L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated

TPCF8A01

Abstract: toshiba Silicon Rectifier Diodes
Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

TPCF8A01

Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

SMD R5D diode

Abstract: Zener diode smd marking code C24 smd MARKING r5b marking code R38 SMD Transistor smd marking code r55 R5C MARKING CODE SOT23 SMD r2f smd marking R5D SMD code R5D SMD r5d
Contextual Info: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

Contextual Info: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

MCV MOSFET

Abstract: TPCF8A01
Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

Contextual Info: P D -9.911 A International IRF9Z14S/L 3BR Rectifier HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z14S • Low-profile through-hole (IRF9Z14L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated

Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

PHILIPS MOSFET MARKING

Abstract: BF998R UBB087
Contextual Info: 00E3tM3 474 • Philips Semiconductors Data sheet status Product specification date of issue O ctob e r 1990 FEATURES • Short channel transistor with high ratio lYfs |/C S. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

C 3619

Abstract: tps 3619 VLF5014ST package LTC3619 LTC3619B LTC3619E LTC3619EDD LTC3619EMSE LTC3619I LTC3619IDD
Contextual Info: LTC3619 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Ripple <25mVP-P Burst Mode Operation:

C 3619

Abstract: c822c VLF3010AT2R2-M1R0 FDK*MIPF2520D 3619
Contextual Info: LTC3619 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit Description Features Programmable Average Input Current Limit: ±5% Accuracy n Dual Step-Down Outputs: Up to 96% Efficiency n Low Ripple <25mV P-P Burst Mode Operation: IQ = 50µA

Contextual Info: LTC3619 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Ripple <25mVP-P Burst Mode Operation:

FDK*MIPF2520D

Abstract: FUSE 160mA LTC312 VLF3010AT-4R7M
Contextual Info: Features Programmable Average Input Current Limit: ±5% Accuracy n Dual Step-Down Outputs: Up to 96% Efficiency n Low Noise Pulse-Skipping Operation at Light Loads n Input Voltage Range: 2.5V to 5.5V n Output Voltage Range: 0.6V to 5V n 2.25MHz Constant-Frequency Operation

lps4012

Abstract: LTC3546 LTC3619 LTC3619B LTC3619BE LTC3619BEDD LTC3619BEMSE LTC3619BIDD LTC3619BIMSE
Contextual Info: Features Programmable Average Input Current Limit: ±5% Accuracy n Dual Step-Down Outputs: Up to 96% Efficiency n Low Noise Pulse-Skipping Operation at Light Loads n Input Voltage Range: 2.5V to 5.5V n Output Voltage Range: 0.6V to 5V n 2.25MHz Constant-Frequency Operation

Contextual Info: LTC3876 Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VTT Reference DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 3876 is a complete DDR power solution, compatible with DDR1, DDR2, DDR3 and future DDRX lower voltage standards. The LTC3876 includes VDDQ and VTT

DEMO Interleaved boost converter

Abstract: 0009m BSC010NE2LS LTC3876FE
Contextual Info: LTC3876 Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VTT Reference DESCRIPTION FEATURES n n n n n n n n n n n n Complete DDR Power Solution with VTT Reference Wide VIN Range: 4.5V to 38V, VDDQ: 1V to 2.5V ±0.67% VDDQ Output Voltage Accuracy

35HVP47M

Abstract: protected switches low-dropout linear voltage regulator 3838F RFB21 LTC3833
Contextual Info: LTC3838 Dual, Fast, Accurate StepDown DC/DC Controller with Differential Output Sensing DESCRIPTION FEATURES Wide VIN Range: 4.5V to 38V, VOUT: 0.6V to 5.5V n ±0.67% Output Voltage Accuracy Over Temperature, Differential Output Voltage Sensing, Allowing Up to

Contextual Info: LTC3619B 400mA/800mA Synchronous Step-Down DC/DC with Average Input Current Limit DESCRIPTION FEATURES n n n n n n n n n n n n n n Programmable Average Input Current Limit: ±5% Accuracy Dual Step-Down Outputs: Up to 96% Efficiency Low Noise Pulse-Skipping Operation at Light Loads

Contextual Info: LTC3875 Dual, 2-Phase, Synchronous Controller with Low Value DCR Sensing and Temperature Compensation DESCRIPTION FEATURES Dual, 180° Phased Controllers Reduce Required Input Capacitance and Power Supply Induced Noise n Low Value DCR Current Sensing n ±0.5% 0.6V Output Voltage Accuracy