N POWER MOSFET DEPLETION Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 „ DESCRIPTION 1 2 The UTC UF601 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.

depletion mode mosfet

Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs The High Performance MOSFET family of Pow er MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a

SGSP369

Contextual Info: SGS-THOMSON ^ T # tm [f^ D [^ Ô i[L i(§ T r ^ (Ô )R { ]D © S T E C H N IC A L N O T E STUDY OF A MODEL FOR POWER MOSFET GATE-CHARGE INTRODUCTION The increasing interest in POWER MOSFET devi­ ces is due especially to their ability to switch po­ wer at high frequencies and the simple drive

IXTA02N100D2

Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
Contextual Info: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .

IXTH6N100D2

Abstract: IXTA6N100D2 IXTP3N50D2 IXTA3N50D2 IXTY1R6N50D2 MOSFET 400V TO-220 dz1 ZENER DIODE depletion mode mosfet n-channel 1000V IXTP08N100D2
Contextual Info: POWER N E W Efficiency Through Technology P RO D U CT BR I E F 500V-1000V Depletion-Mode D2TM Power MOSFETs ‘Normally-on’ power mosfet solutions for dynamic load and zero power load switching applications october 2009 OVERVIEW As green energy trends continue to grow in popularity, today’s Design Engineers are now

2N3823 equivalent

Abstract: 2N3822 2N3823 2n3821 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN
Contextual Info: Technical Data 2N3821 JAN, JTX, JTXV 2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage

n mosfet depletion 600V

Contextual Info: SIPMOS N Channel MOSFET BSP 135 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current Vfes = 600V I B = 0.100A • Drain-source on-resistance • Total power dissipation flDS on = 60Q P0 = 1,5W ( Type Marking Ordering code for

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: BEE D • flE3b320 0017173 4 « S I P SIPMOS N Channel MOSFET T - S á M S" SIEMENS/ SPCLi SEMICONDS • SIPMOS - depletion mode • Draln-source voltage • Continuous drain current Vas = 250V /„ = 0.04A • Drain-source on-resistance • Total power dissipation

Contextual Info: 32E D • Ö23b320 QG171ÜS «SIP SIP M O S N Channel MOSFET _ SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIP M O S - depletion mode • Drain-source voltage • Continuous drain current Vfcs = 600V /D = 0.100A • Drain-source on-reslstance • Total power dissipation

BQ25A

Abstract: BQ-25a bq24725A BQ25A TI Texas Instruments BQ25A 14 pin ic ROHM ELECTRONICS SIS412DN BQ24725ARGRT bq24725ARGRR 65W ac adapter schematic
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

bq24725

Abstract: BQ25A
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

BQ25A

Abstract: BQ-25a BQ25A TI Texas Instruments BQ25A
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

BQ25A

Abstract: BQ-25a 14 pin ic ROHM ELECTRONICS BQ25A TI Texas Instruments BQ25A SIS412DN bq24725ARGRR bq24725A BQ24725ARGRT terminal end plate AP 1.5
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

BQ25A

Abstract: BQ-25a BQ25A TI 14 pin ic ROHM ELECTRONICS bq24725ARGRR Texas Instruments BQ25A bq24725A Sis412DN 90W circuit Notebook Power Adapter BQ24725ARGRT
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

Power MOSFET Basics

Abstract: MOSFETs MOS-006 10-15V
Contextual Info: Source Gate Power MOSFET Basics N+ P-body Table of Contents 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. N- Epi Basic Device Structure Breakdown Voltage On-State Characteristics Capacitance Gate Charge Gate Resistance Turn-on and Turn-off Body Diode Forward Voltage

BQ735

Abstract: bq24735RGRR Sis412DN bQ73 BAT54 BAT54A BAT54C BSS138W FDS6680A PDS1040
Contextual Info: bq24735 SLUSAK9 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous