2N3821 Search Results

2N3967

Abstract: 2N3369 2N3370 2N3460 2N3821 2N3822 2N3967A 2N3968 NJ16
Contextual Info: INTER P E T C OR P EbE D • 4a2Lflflö 0 0 0 0 1 6 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiom V<8« GSS Ig nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 -4 0 -4 0 -5 0 -5 0 -5 0 -1 -1 -1 -1 -1 2N3821

2n5105

Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105

2n3822

Abstract: TO72 package n-channel jfet 2N3822 2n3821 2N3822 equivalent
Contextual Info: CALÔGIC CORP MAE ]> 1 Ô4 4 3 2 2 3 WÊCGC N-Channel JFET High Frequency Amplifier CORPORATION \J T-Z\-Z 5 2N3821/2N3822 FEATURES ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise noted • Low Capacitance • Up to 6500|is Transconductance Part Package

Contextual Info: 2N3821+JANTXV Transistors N-Channel JFET Military/High-RelY V BR DSS (V)50 V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2N3819 equivalent

Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30

2N3824

Abstract: transistor 2N3824 2N3822 2n3821
Contextual Info: Datasheet 2N3821 2N3822 2N3824 I H V IM fSem E iconductor c i l l i QCorp. 1 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-72 CASE Manufacturers of World Class Discrete Semiconductors

2N3819 ti

Abstract: 2N3819 equivalent 2N3822 2N4223-24 2N5556-58 2N5457-9 2N3819 2N3821 2N3821-4 2N4220-2
Contextual Info: designed for . B Siliconix . Performance Curves NRL See Section 5 2N3822 • Sm all-Signal A m plifiers ■ Oscillators 2N3821 n-channel JFETs B EN EFITS • Operates from High Supply Voltages B V q s s > 50 V •A B S O L U TE M A X IM U M R A T IN G S 25°C

2N3822

Abstract: 2n3821
Contextual Info: cal CORPORATION •? 2N3821/2N3822 FEATURES ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise noted • Low Capacitance • Up to 6500ns Transconductance Gate-Source Gate-Drain Voltage .-50V

VDS-15

Abstract: 2N3822 equivalent T072 2N3821 2N3822
Contextual Info: designed for . B . Siliconix Performance Curves NRL See Section 5 • Small-Signal Amplifiers ■ Oscillators B E N E F IT S • Operates from High Supply Voltages B V q s s > 50 V 2N3821 2N3822 n-channel JFETs •A B S O L U T E M AXIMUM R A T IN G S 25°C

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

2N3822 equivalent

Abstract: 2N3821 2N3822 2N3621 X2N3821 X2N3822
Contextual Info: CALOGIC CORP 4ÖE D 1Ô44322 00002*10 3 • CGC calori CORPORATION V ~ z\-zs 2N3821/2N3822 F E A TU R E S A B S O L U T E M A X IM U M R A T IN G S T a - 2 5 °C unless otherwise noted • L o w C ap ac ita n ce • U p to 6 5 0 0 |is T ra n s c o n d u cta n c e

2n3824

Abstract: 2N3822 2N3824 equivalent 2N3822 MOTOROLA 2N3822 equivalent 2N4220 MOTOROLA 2n3821 2N3621
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | fa3fa7a5»4 0Dabbl3 fl | 2N3821, 2N3822 2N3824 CASE 20-03, STYLE 1 TO-72 TO-206AF M AXIM UM RATINGS Symbol Value Drain-Source Voltage VDS 50 Vdc Drain-Gate Voltage Vd g 50 Vdc Gate-Source Voltage Rating Unit Vg S -5 0 Vdc Drain Current

2N3823 equivalent

Abstract: 2N3822 2N3823 2n3821 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN
Contextual Info: Technical Data 2N3821 JAN, JTX, JTXV 2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage

2N3823 equivalent

Abstract: 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

TIS34

Abstract: MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102
Contextual Info: N-Channel FETs RF amps BVGSS "BVOGO IVI M,n ease Type No. Styl. lOSS ImAI IGSS InAl Max Min Max Yfl I"mhol M,n @ , IMHzl Vploffl IVI Max C,a IpFI Max Gp lelll Min Cra IpFI Max @ , IMHz! NF IdBI @ Max IM~z!@ R""n Iknl Proc. No. 2N3821 TO•72 50 01 05 25 1500

2N3823

Abstract: 2N3822 2N3821 TI 2n3823 2N3021
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3821. 2N3822 2N3823 N-Channel, Depletion Mode Junction Field-Effect Transistors JFETs . . designed for small-signal, lovn-noise amplifier applications. M A X IM U M R A T IN G S Symbol 2N3821 2N3822 2N3823 Unit Drain-Gate Voltage

2N3823

Abstract: 2N3822 2N3823 equivalent 2N3821 2N3822 equivalent 2n 3821 2n EQUIVALENT
Contextual Info: 2N3821 2N 3 8 2 2 2N3 8 2 3 FIELD EFFECT TRANSISTO RS, SILICON, N CH ANN EL T R A N SIST O R S A E F F E T D E CHAMP, SILICIU M , C A N A L N HF amplification IDSS 0,5 • 2,5 mA 2- 10 mA 4 - 20 mA 2N 3821 2N 3822 2N 3823 Y21 s 1.5 - 4,5 mS 3 - 6,5 mS 3.5 • 6,5 mS

Contextual Info: 2N3821+JANS Transistors N-Channel JFET Military/High-RelY V BR DSS (V)50 V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2N5358

Abstract: nj16 2N3369 2N3370 2N3459 2n3459 nj16 2n5105 NJ32 2N3458 2N3460
Contextual Info: INT ER F E T CORP 2fc>E D • 4S2LSflö 0 0 0 0 1Ö 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiem Mm V Ig (nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 2N3821 2N3822 2N3967 2N3967A 2N3968 2N3968A 2N3969

small signal transistor MOTOROLA

Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
Contextual Info: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”

2N3822

Abstract: 2N3823 equivalent 2n3823 2N3822 equivalent 2N3821 2N3823 JANTX "Power over Ethernet"
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent

Contextual Info: B3 9 -9 7 2N3821, 2N3822 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTO R • VHF AMPLIFIERS • SMALL SIGNAL AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Static Electrical Characteristics

UC734

Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
Contextual Info: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA

2n3824

Abstract: 2N3822 equivalent 2N3823 equivalent 2N3824 equivalent
Contextual Info: TYPES 2N3821 THRU 2N3824 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 9 , M A R C H 1973 2N3821, 2N3822 FO R S M A L L-S IG N A L A P P LIC A T IO N S • Low lG S S : < 10 0 pA • Low Cj$s : < 6 pF • High