N-CHANNEL 2.5V Search Results

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

w905

Abstract: FW905
Contextual Info: FW905 Ordering number : EN8754 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features • • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage

Contextual Info: FW905 Ordering number : EN8754 N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features • • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package.

w905

Abstract: FW905 6-A25
Contextual Info: FW905 Ordering number : EN8754 N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features • • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package.

FDMJ1032C

Abstract: marking 032 SC-75 Dual N & P-Channel
Contextual Info: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement

FDD3510H

Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

Contextual Info: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one

equivalent smd mosfet

Abstract: common-drain MOSFET TSSOP-8 dual n-channel IC MOSFET QG MOSFET TSSOP-8 SI6968BEDQ nc245 65a30 si6968
Contextual Info: MOSFET IC SMD Type Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 Unit: mm Features VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A N-Channel N-Channel * Typical value by design

MOSFET P-channel SOT-23

Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Contextual Info: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

marking code R

Abstract: MARKING CODE W
Contextual Info: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

CMUDM7590

Abstract: on semiconductor marking code sot CMUDM3590
Contextual Info: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

TSOP-6

Abstract: SSF2701
Contextual Info: SSF2701 GENERAL FEATURES N-Channel ● VDS = 20V,ID = 2.4A RDS ON < 125mΩ @ VGS=4.5V RDS(ON) < 200mΩ @ VGS=2.5V Schematic diagram P-Channel ● P-channel N-channel VDS = -20V,ID = -2.8A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 150mΩ @ VGS=-2.5V Pin Assignment

Contextual Info: LTC2195 LTC2194/LTC2193 16-Bit, 125/105/80Msps Low Power Dual ADCs FEATURES n n n n n n n n n n n n DESCRIPTION 2-Channel Simultaneous Sampling ADC Serial LVDS Outputs: 1, 2 or 4 Bits per Channel 76.8dB SNR 90dB SFDR Low Power: 432mW/360mW/249mW Total 216mW/180mW/125mW per Channel

Contextual Info: SSF2783 GENERAL FEATURES N-Channel VDS = 20V,ID = 3.5A RDS ON < 60mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V RDS(ON) < 150mΩ @ VGS=1.8V ● P-channel N-channel P-Channel VDS = -20V,ID = -2.7A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 145mΩ @ VGS=-2.5V

Contextual Info: RY A N I CEDM7004 Central IM EL PR TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process,

C3j marking

Abstract: CMLDM7003 CMLDM7003J code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J
Contextual Info: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel

Contextual Info: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel

Contextual Info: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V 7.1 0.035 @ VGS = 2.5 V 6.0 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V

Contextual Info: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V 7.1 0.035 @ VGS = 2.5 V 6.0 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V

mosfet vgs 5v

Abstract: mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet
Contextual Info: CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed

CMUDM7001

Abstract: mosfet low vgs
Contextual Info: CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed

CMLDM7003E

Abstract: CMLDM7003J CMLDM7003 CMLDM7003JE marking code c73 mosfet marking code 40 C73 MARKING CODE marking C73
Contextual Info: Central CMLDM7003E CMLDM7003JE Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel