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    N-CHANNEL 2.5V MOSFET Search Results

    N-CHANNEL 2.5V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 2.5V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    Original     		PDF SI3446DV

    FDC637AN

    Abstract: SI3446DV
    Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    Original     		PDF FDC637AN SI3446DV FDC637AN SI3446DV

    FDC637AN

    Abstract: marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV
    Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    Original     		PDF FDC637AN SI3446DV FDC637AN marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV

    FDW9926NZ

    Abstract: C3245
    Text: FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power


    Original     		PDF FDW9926NZ FDW9926NZ C3245

    2515NZ

    Abstract: FDW2515NZ 58af
    Text: FDW2515NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power


    Original     		PDF FDW2515NZ 2515NZ FDW2515NZ 58af

    9926n

    Abstract: FDW9926NZ
    Text: FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power


    Original     		PDF FDW9926NZ 9926n FDW9926NZ

    8E-10

    Abstract: FDM3300NZ TC146
    Text: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM3300NZ 2000v 8E-10 FDM3300NZ TC146

    2509NZ

    Abstract: PDA30 FDW2509NZ
    Text: FDW2509NZ Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power


    Original     		PDF FDW2509NZ 2509NZ PDA30 FDW2509NZ

    Untitled

    Abstract: No abstract text available
    Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and


    Original     		PDF FDC6305N

    FDM2452NZ

    Abstract: No abstract text available
    Text: FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM2452NZ FDM2452NZ

    Untitled

    Abstract: No abstract text available
    Text: January 2007 FDY300NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v.


    Original     		PDF FDY300NZ

    FDMW2512NZ

    Abstract: No abstract text available
    Text: FDMW2512NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDMW2512NZ FDMW2512NZ

    2509NZ

    Abstract: FDW2509NZ PDA30
    Text: FDW2509NZ Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power


    Original     		PDF FDW2509NZ 2509NZ FDW2509NZ PDA30

    Untitled

    Abstract: No abstract text available
    Text: FDM2509NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM2509NZ

    FDY300NZ

    Abstract: SC89 N-Channel 2.5V
    Text: January 2007 FDY300NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v.


    Original     		PDF FDY300NZ FDY300NZ SC89 N-Channel 2.5V

    FDM2509NZ

    Abstract: No abstract text available
    Text: FDM2509NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM2509NZ FDM2509NZ

    FDC6305N

    Abstract: No abstract text available
    Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and


    Original     		PDF FDC6305N FDC6305N

    Untitled

    Abstract: No abstract text available
    Text: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM3300NZ 2000v 25oClopment.

    CBVK741B019

    Abstract: F63TNR FDC6305N FDC633N
    Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and


    Original     		PDF FDC6305N CBVK741B019 F63TNR FDC6305N FDC633N

    CBVK741B019

    Abstract: F63TNR FDC6305N FDC633N
    Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and


    Original     		PDF FDC6305N CBVK741B019 F63TNR FDC6305N FDC633N

    Untitled

    Abstract: No abstract text available
    Text: FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on


    Original     		PDF FDM2452NZ

    Untitled

    Abstract: No abstract text available
    Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and


    Original     		PDF FDC6305N

    Untitled

    Abstract: No abstract text available
    Text: FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low


    Original     		PDF FDC637AN

    FDR8305N

    Abstract: N-Channel 2.5V
    Text: =Ml C O N D U C TO R tm FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		PDF FD8305N FDR8305N N-Channel 2.5V