N-CHANNEL 2.5V MOSFET Search Results
N-CHANNEL 2.5V MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TK5R1A08QM |
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MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS |
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| TK155E65Z |
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N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ |
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| TK3R3E08QM |
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MOSFET, N-ch, 80 V, 120 A, 0.0033 Ohm@10V, TO-220AB |
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| TK110E65Z |
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N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅥ |
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| TK2R4A08QM |
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MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS |
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N-CHANNEL 2.5V MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored |
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SI3446DV | |
FDC637AN
Abstract: SI3446DV
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FDC637AN SI3446DV FDC637AN SI3446DV | |
FDC637AN
Abstract: marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV
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FDC637AN SI3446DV FDC637AN marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV | |
FDW9926NZ
Abstract: C3245
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FDW9926NZ FDW9926NZ C3245 | |
2515NZ
Abstract: FDW2515NZ 58af
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FDW2515NZ 2515NZ FDW2515NZ 58af | |
9926n
Abstract: FDW9926NZ
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FDW9926NZ 9926n FDW9926NZ | |
8E-10
Abstract: FDM3300NZ TC146
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FDM3300NZ 2000v 8E-10 FDM3300NZ TC146 | |
FDR8305N
Abstract: N-Channel 2.5V
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OCR Scan |
FD8305N FDR8305N N-Channel 2.5V | |
2509NZ
Abstract: PDA30 FDW2509NZ
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FDW2509NZ 2509NZ PDA30 FDW2509NZ | |
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Contextual Info: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and |
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FDC6305N | |
FDM2452NZContextual Info: FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on |
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FDM2452NZ FDM2452NZ | |
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Contextual Info: January 2007 FDY300NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v. |
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FDY300NZ | |
FDMW2512NZContextual Info: FDMW2512NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on |
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FDMW2512NZ FDMW2512NZ | |
2509NZ
Abstract: FDW2509NZ PDA30
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FDW2509NZ 2509NZ FDW2509NZ PDA30 | |
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Contextual Info: FDM2509NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on |
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FDM2509NZ | |
FDY300NZ
Abstract: SC89 N-Channel 2.5V
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FDY300NZ FDY300NZ SC89 N-Channel 2.5V | |
FDM2509NZContextual Info: FDM2509NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on |
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FDM2509NZ FDM2509NZ | |
FDC6305NContextual Info: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and |
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FDC6305N FDC6305N | |
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Contextual Info: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on |
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FDM3300NZ 2000v 25oClopment. | |
CBVK741B019
Abstract: F63TNR FDC6305N FDC633N
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FDC6305N CBVK741B019 F63TNR FDC6305N FDC633N | |
CBVK741B019
Abstract: F63TNR FDC6305N FDC633N
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FDC6305N CBVK741B019 F63TNR FDC6305N FDC633N | |
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Contextual Info: FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on |
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FDM2452NZ | |
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Contextual Info: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and |
Original |
FDC6305N | |
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Contextual Info: FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low |
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FDC637AN | |