N-CHANNEL DUAL GATE Search Results

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: differential pair cascode Monolithic Transistor Pair ALD1101 ALD1102 ALD1103 Dual N-Channel MOSFET dip package CMOS differential amplifier cascode
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

9033 transistor

Abstract: BF1203
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203

ALD1105PBL

Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

U426

Abstract: dual jfet TO78
Contextual Info: LSU426 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U426 The LSU426 is a high input impedance Monolithic Dual N-Channel JFET The LSU426 monolithic dual n-channel JFET is designed to provide very high input impedance for

95160

Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
Contextual Info: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with

Contextual Info: LSU422 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U422 The LSU422 is a high input impedance Monolithic Dual N-Channel JFET The LSU422 monolithic dual n-channel JFET is designed to provide very high input impedance for differential

Dual N-Channel JFET

Contextual Info: U426 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U426 The U426 is a high input impedance Monolithic Dual N-Channel JFET The U426 monolithic dual n-channel JFET is designed to provide very high input impedance for differential

Contextual Info: U422 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U422 The U422 is a high input impedance Monolithic Dual N-Channel JFET The U422 monolithic dual n-channel JFET is designed to provide very high input impedance for differential

Contextual Info: U425 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U425 The U425 is a high input impedance Monolithic Dual N-Channel JFET The U425 monolithic dual n-channel JFET is designed to provide very high input impedance for differential

Contextual Info: LSU421 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U421 The LSU421 is a high input impedance Monolithic Dual N-Channel JFET The LSU421 monolithic dual n-channel JFET is designed to provide very high input impedance for differential

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Analog Devices JX A 8 pin

Abstract: ALD1103 N and P MOSFET
Contextual Info: I / I 1 A dvanced L inear D e v ic e s , In c . ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR APPLICATIONS GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's

mosfet handbook

Abstract: K 3053 TRANSISTOR MAM192 BF909WR Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES

FDD8424

Contextual Info: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

K 3053 TRANSISTOR

Abstract: BF909R BF909 marking M29 mosfet marking code gg transistor marking G1 PHILIPS FW 36 20 MLB944
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R

FDMQ8203

Contextual Info: FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in

mosfet nA idss

Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs
Contextual Info: Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and

BF997

Abstract: Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS

"MARKING CODE LE"

Abstract: BF1202WR BF1202 BF1202R dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR

2P1 transistor

Contextual Info: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

1251D

Abstract: FDMS3616S Ultra Low rds
Contextual Info: FDMS3616S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 6.6 mΩ at VGS = 10 V, ID = 16 A dual PQFN package. The switch node has been internally