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    N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Search Results

    N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    		Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    XPQR8308QB
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK065U65Z
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6661

    Contextual Info: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics


    Original     		2N6661 2N6661 com/2n6661 PDF

    CMUDM7001

    Abstract: mosfet low vgs
    Contextual Info: CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed


    Original     		CMUDM7001 CMUDM7001 OT-523 100mA mosfet low vgs PDF

    mosfet vgs 5v

    Abstract: mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet
    Contextual Info: CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed


    Original     		CMPDM7003 CMPDM7003 C7003 OT-23 115mA 200mA 24-July mosfet vgs 5v mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet PDF

    CEDM7001

    Abstract: mosfet low vgs n-channel mosfet transistor low power CEDM7001E
    Contextual Info: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001E CEDM7001E OT-883L 100mW CEDM7001E: 100mA 16-March CEDM7001 mosfet low vgs n-channel mosfet transistor low power PDF

    mosfet low vgs

    Abstract: logic level n channel MOSFET mosfet low vgs 1A JESD51-5 JESD51-7
    Contextual Info: CTLDM7120-M621H SURFACE MOUNT TLMTM N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7120-M621H is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS


    Original     		CTLDM7120-M621H TLM621H JESD51-5 JESD51-7. 15-January mosfet low vgs logic level n channel MOSFET mosfet low vgs 1A JESD51-7 PDF

    CEDM7001

    Abstract: mosfet low vgs mosfet vgs 5v
    Contextual Info: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001 CEDM7001 OT-883L 100mW CEDM7001: 100mA 31-July mosfet low vgs mosfet vgs 5v PDF

    n-channel mosfet transistor low power

    Abstract: CEDM7001
    Contextual Info: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001E CEDM7001E OT-883L 100mW CEDM7001E: 100mA 20-November n-channel mosfet transistor low power CEDM7001 PDF

    sot883l

    Abstract: CEDM7001
    Contextual Info: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001 100mW OT-883L CEDM7001: 100mA 16-March sot883l PDF

    CEDM7001

    Contextual Info: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		CEDM7001 CEDM7001 OT-883L 100mW CEDM7001: 100mA 29-November PDF

    CMLDM7003G

    Contextual Info: CMLDM7003G SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003G is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed


    Original     		CMLDM7003G CMLDM7003G: OT-563 200mA 115mA PDF

    NDH853N

    Contextual Info: N August 1996 PRELIMINARY NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		NDH853N NDH853N PDF

    Contextual Info: CMLDM7003T CMLDM7003TG* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process,


    Original     		CMLDM7003T CMLDM7003TG* CMLDM7003T: OT-563 PDF

    NS4890

    Abstract: NDH8303N
    Contextual Info: N October 1996 PRELIMINARY NDH8303N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDH8303N NDH8303N NS4890 PDF

    NDH8501N

    Contextual Info: N September 1996 PRELIMINARY NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDH8501N NDH8501N PDF

    NDH8303N

    Contextual Info: N September 1996 PRELIMINARY NDH8303N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDH8303N NDH8303N PDF

    Contextual Info: RY A N I CEDM7004 Central IM EL PR TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process,


    Original     		CEDM7004 CEDM7004 OT-883L tp10s 400mA 200mA 100mA 16-June PDF

    mosfet bs170

    Abstract: equivalent of BS170 EQUIVALENT FOR bs170 BS170 BS170 application note sot23 BS170 bs170 datasheet MMBF170 BS170 DATA SHEET GTO Driver
    Contextual Info: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been


    Original     		BS170 MMBF170 500mA mosfet bs170 equivalent of BS170 EQUIVALENT FOR bs170 BS170 application note sot23 BS170 bs170 datasheet MMBF170 BS170 DATA SHEET GTO Driver PDF

    NDH8301N

    Contextual Info: N May 1996 ADVANCE INFORMATION NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology.


    Original     		NDH8301N 135oC/W 0025in2 NDH8301N PDF

    BS170

    Abstract: BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
    Contextual Info: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been


    Original     		BS170 MMBF170 500mA BS170 BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170 PDF

    bs170

    Abstract: transistor MOSFET BS170 BS170 application note TRANSISTOR BS170
    Contextual Info: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been


    Original     		BS170 MMBF170 500mA BS170 transistor MOSFET BS170 BS170 application note TRANSISTOR BS170 PDF

    NDS8410A

    Contextual Info: N January 1997 PRELIMINARY NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		NDS8410A NDS8410A PDF

    NDT3055L

    Abstract: TR NDT3055L
    Contextual Info: N September 1996 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancement mode field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDT3055L NDT3055L TR NDT3055L PDF

    C7G M

    Contextual Info: RY A CMLDM7120G IN Central IM ELSURFACE MOUNT PICOmini PR Semiconductor Corp. TM N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7120G is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS


    Original     		CMLDM7120G OT-563 17-October C7G M PDF

    2N6661

    Contextual Info: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSFP-2N6661 C042711 PDF