NDH8501N Search Results
NDH8501N Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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NDH8501N |
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Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 72.87KB | 6 | ||
NDH8501N |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
NDH8501N |
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Dual N-Channel Enhancement Mode Field Effect Transistor | Scan | 155.91KB | 6 |
NDH8501N Price and Stock
Fairchild Semiconductor Corporation NDH8501NDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NDH8501N | 42,000 |
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NDH8501N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NDH8501NContextual Info: December 1996 NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density |
Original |
NDH8501N NDH8501N | |
NDH8501NContextual Info: FAIRCHILD Decem ber 1996 MICDNDUCTOR NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density |
OCR Scan |
NDH8501N NDH8501N | |
NDH8501NContextual Info: N September 1996 PRELIMINARY NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS |
Original |
NDH8501N NDH8501N | |
Contextual Info: R A I R C H I I- D December 1996 M IC D N D U C T O R ^ NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, |
OCR Scan |
NDH8501N NDH8501N | |
Contextual Info: FAIRCHILD December 1996 Ml CONDUCTOR NDH8501N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features S upe rS O T -8 N -C hannel en hancem ent m ode pow er field effe ct tra nsistors are produce d using Fairchild's proprietary, |
OCR Scan |
NDH8501N H8501N | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
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2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L | |
NDT453N
Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
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T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 |