N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Search Results

Contextual Info: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4424, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are

8N45

Abstract: MTN8N45E3 you isd electronics
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C720E3 Issued Date : 2009.06.06 Revised Date : Page No. : 1/8 BVDSS : 450V RDS ON : 0.85Ω MTN8N45E3 ID : 8A Description The MTN8N45E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best

specifications of power mosfet

Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

UF840

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT7410 Preliminary Power MOSFET 30V, 24A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT7410 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON and low gate charge.

b20n03

Abstract: MOSFET B20N03 MTB20N03 MTB20N03Q8 M B20N03 B20n 4V105 Cystek 30V-8A C396Q8
Contextual Info: Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 1/6 CYStech Electronics Corp. N-Channel LOGIC Level Enhancement Mode Power MOSFET MTB20N03Q8 BVDSS ID RDSON max 30 V 8A 20mΩ Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

MOSFET 50V 100A TO-220

Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V spn4946
Contextual Info: SPN4946 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

SPN4972B

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 SPN4972BS8RGB
Contextual Info: SPN4972B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4972B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

N-Channel 40V MOSFET

Abstract: SPN5454
Contextual Info: SPN5454 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN5454 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN5454 has been designed specifically to improve the overall

SPN4526

Abstract: marking 8 SOP-8P mosfet gate source voltage 20v N-Channel 40V MOSFET
Contextual Info: SPN4526 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4526 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V

Abstract: SPN9977 mosfet VDS 30V ID 6A TO 252 TO-252 N-channel power MOSFET static characteristics of mosfet
Contextual Info: SPN9977 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9977 is the N-Channel logic enhancement mode power field effect transistors are produced using super high cell density , DMOS trench technology. The SPN9977 has been designed specifically to improve the overall efficiency

SPN09T10T252RG

Abstract: n-channel mosfet transistor low power SPN09T10 static characteristics of mosfet TO-252 N-channel MOSFET 100V 8A N-Channel MOSFET
Contextual Info: SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN09T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN09T10 has been designed specifically to improve the overall

spn4910

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Vgs 40V mosfet N-Channel Enhancement Mode MOSFET N-Channel vgs 40V MOSFET
Contextual Info: SPN4910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4910 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPN11T10

Abstract: 100V 8A N-Channel MOSFET N_CHANNEL MOSFET 100V MOSFET n-channel mosfet transistor low power
Contextual Info: SPN11T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN11T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN11T10 has been designed specifically to improve the overall

SPN4506

Abstract: Vgs 40V mosfet mosfet gate source voltage 20v
Contextual Info: SPN4506 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4506 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

MOSFET N-CHANNEL 60v 60A

Contextual Info: SPN4436 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4436 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

Abstract: MOSFET 400V TO-220 TQ2 rohs UF840-TQ2-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T uf840l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION 1 TO-263 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Application of irf840

Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
Contextual Info: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of