N-P CHANNEL MOSFET TSOP6 Search Results

N-P CHANNEL MOSFET TSOP6 Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
TK5R1A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS
TK155E65Z	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ
TK3R3E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.0033 Ohm@10V, TO-220AB
TK110E65Z	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅥ

N-P CHANNEL MOSFET TSOP6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MTC3585G6 Abstract: MTC3585 Contextual Info: Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585G6 Description The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single	Original	C416G6 MTC3585G6 MTC3585G6 UL94V-0 MTC3585	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402	PDF
si3529 Abstract: Si3529DV SI3529DV-T1-E3 Contextual Info: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V	Original	Si3529DV Si3529DV-T1--E3 51448--Rev. 01-Aug-05 si3529 SI3529DV-T1-E3	PDF
Contextual Info: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V	Original	Si3529DV Si3529DV-T1--E3 08-Apr-05	PDF
72032 Abstract: Si3590DV Contextual Info: Si3590DV New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 rDS(on) (W) ID (A) 0.077 @ VGS = 4.5 V 3 0.120 @ VGS = 2.5 V 2 0.170 @ VGS = -4.5 V -2 0.300 @ VGS = -2.5 V -1.2 D TrenchFETr Power MOSFET	Original	Si3590DV S-21979--Rev. 04-Nov-02 72032	PDF
Contextual Info: Si3590DV New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 rDS(on) (W) ID (A) 0.077 @ VGS = 4.5 V 3 0.120 @ VGS = 2.5 V 2 0.170 @ VGS = -4.5 V -2 0.300 @ VGS = -2.5 V -1.2 D TrenchFETr Power MOSFET	Original	Si3590DV 08-Apr-05	PDF
50132 Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V	Original	Si3850DV Si3850DV-T1 Si3850DV-T1--E3 08-Apr-05 50132	PDF
Si3850DV-T1 Abstract: Si3850DV s2dg1 Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V	Original	Si3850DV Si3850DV-T1 Si3850DV-T1--E3 18-Jul-08 s2dg1	PDF
Si3850DV Abstract: Si3850DV-T1 S-50132 Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V	Original	Si3850DV Si3850DV-T1 Si3850DV-T1--E3 S-50132--Rev. 24-Jan-05 S-50132	PDF
Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V	Original	Si3850DV Si3850DV-T1 Si3850DV-T1--E3 08-Apr-05	PDF
Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = - 4.5 V - 0.85 1.30 @ VGS = - 3.0 V	Original	Si3850DV Si3850DV-T1 S-31725--Rev. 18-Aug-03	PDF
72032 Abstract: Si3590DV Contextual Info: Si3590DV Vishay Siliconix New Product N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 rDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • TrenchFET Power MOSFET	Original	Si3590DV 18-Jul-08 72032	PDF
72032 Abstract: Si3590DV Contextual Info: Si3590DV Vishay Siliconix New Product N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 rDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • TrenchFET Power MOSFET	Original	Si3590DV 08-Apr-05 72032	PDF
Si3552DV Abstract: Si3552DV-T1 Contextual Info: Si3552DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = - 10 V - 1.8 0.360 @ VGS = - 4.5 V - 1.2 TSOP-6	Original	Si3552DV Si3552DV-T1 18-Jul-08	PDF

Si3552DV Abstract: Si3552DV-T1 Contextual Info: Si3552DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = - 10 V - 1.8 0.360 @ VGS = - 4.5 V - 1.2 TSOP-6	Original	Si3552DV Si3552DV-T1 S-31725--Rev. 18-Aug-03	PDF
RD10 Abstract: WTV3585 Contextual Info: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change	Original	WTV3585 03-Apr-07 RD10 WTV3585	PDF
Contextual Info: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change	Original	WTV3585 OT-26 03-Apr-07	PDF
IRF P CHANNEL MOSFET Abstract: IRF5800 IRF5850 IRF5851 SI3443DV Contextual Info: PD-93998A IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International	Original	PD-93998A IRF5851 requ805 IRF5806 IRF P CHANNEL MOSFET IRF5800 IRF5850 IRF5851 SI3443DV	PDF
IRF P CHANNEL MOSFET Abstract: irf p channel IRF5851 IRF5800 IRF5850 SI3443DV Contextual Info: PD-93998 IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International	Original	PD-93998 IRF5851 requi05 IRF5806 IRF P CHANNEL MOSFET irf p channel IRF5851 IRF5800 IRF5850 SI3443DV	PDF
si3585 Abstract: mosfet 23 Tsop-6 S1217 Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see	Original	Si3585CDV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3585 mosfet 23 Tsop-6 S1217	PDF
Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see	Original	Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see	Original	Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si3872DV New Product Vishay Siliconix N-Channel 30-V and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –20 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 0.200 @ VGS = –4.5 V "1.8 0.340 @ VGS = –2.5 V	Original	Si3872DV 08-Apr-05	PDF
SI3872DV Abstract: si3872 Contextual Info: Si3872DV New Product Vishay Siliconix N-Channel 30-V and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –20 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 0.200 @ VGS = –4.5 V "1.8 0.340 @ VGS = –2.5 V	Original	Si3872DV 18-Jul-08 si3872	PDF

N-P CHANNEL MOSFET TSOP6 Search Results

N-P CHANNEL MOSFET TSOP6 Result Highlights (5)

N-P CHANNEL MOSFET TSOP6 Datasheets Context Search

MTC3585G6

si3529

72032

50132

Si3850DV-T1

Si3850DV

72032

72032

Si3552DV

Si3552DV

RD10

IRF P CHANNEL MOSFET

IRF P CHANNEL MOSFET

si3585

SI3872DV