SI3585 Search Results
SI3585 Price and Stock
Vishay Siliconix SI3585CDV-T1-GE3MOSFET N/P-CH 20V 3.9A 6TSOP |
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SI3585CDV-T1-GE3 | Digi-Reel | 2,643 | 1 |
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SI3585CDV-T1-GE3 | 846 |
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SI3585CDV-T1-GE3 | 6,000 | 1 |
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Vishay Siliconix SI3585DV-T1-E3MOSFET N/P-CH 20V 2A/1.5A 6TSOP |
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SI3585DV-T1-E3 | Reel |
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SI3585DV-T1-E3 | Bulk | 3,000 |
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SI3585DV-T1-E3 | 32 |
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Vishay Siliconix SI3585DV-T1-GE3MOSFET N/P-CH 20V 2A/1.5A 6TSOP |
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SI3585DV-T1-GE3 | Reel |
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Vishay Intertechnologies SI3585CDV-T1-GE3Trans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 70AC6501) |
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SI3585CDV-T1-GE3 | Ammo Pack | 7 Weeks, 3 Days | 1 |
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SI3585CDV-T1-GE3 | 8,401 |
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SI3585CDV-T1-GE3 | 12,000 | 3,000 |
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SI3585CDV-T1-GE3 | 12,000 | 12 Weeks | 3,000 |
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SI3585CDV-T1-GE3 | Reel | 24,000 | 3,000 |
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SI3585CDV-T1-GE3 | 2,990 |
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SI3585CDV-T1-GE3 | 2,392 |
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SI3585CDV-T1-GE3 | Reel | 69,000 | 3,000 |
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SI3585CDV-T1-GE3 | 1,835 | 1 |
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SI3585CDV-T1-GE3 | 14 Weeks | 3,000 |
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SI3585CDV-T1-GE3 | Cut Tape | 2,295 | 0 Weeks, 1 Days | 5 |
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SI3585CDV-T1-GE3 | 13 Weeks | 3,000 |
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SI3585CDV-T1-GE3 | 32,454 |
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Vishay Intertechnologies SI3585DV-T1 |
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SI3585DV-T1 | 806 |
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SI3585 Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI3585CDV-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.9A 6TSOP | Original | |||
Si3585DV | Vishay Intertechnology | N- and P-Channel 20-V (D-S) MOSFET | Original | |||
SI3585DV | Vishay Siliconix | N-Channel and P-Channel 20-V (D-S) MOSFET | Original | |||
Si3585DV SPICE Device Model |
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N- and P-Channel 20-V (D-S) MOSFET | Original | |||
SI3585DV-T1 | Vishay Intertechnology | N- and P-Channel 20-V (D-S) MOSFET | Original | |||
SI3585DV-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 2A 6-TSOP | Original | |||
SI3585DV-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 2A 6-TSOP | Original |
SI3585 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si3585CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si3585CDV AN609, 9325u 2523u 9146u 1475m 2622u 0053u 7792m 3470m | |
Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see |
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Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
7636 mosfet
Abstract: AN609 Si3585DV
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Si3585DV AN609 03-May-07 7636 mosfet | |
Si3585DVContextual Info: Si3585DV New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 0.200 @ VGS = –4.5 V –1.8 0.340 @ VGS = –2.5 V –1.2 D1 |
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Si3585DV S-00982--Rev. 15-May-00 | |
Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
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Si3585CDV 2002/95/EC 11-Mar-11 | |
Si3585DV
Abstract: 03512
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Si3585DV S-03512--Rev. 04-Apr-01 03512 | |
SI3585DV
Abstract: SI3585DV-T1-E3
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Si3585DV 2002/95/EC Si3585DV-T1-E3 Si3585DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 0.200 at VGS = - 4.5 V - 1.8 0.340 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 |
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Si3585DV 2002/95/EC Si3585DV-T1-E3 Si3585DV-T1-GE3 11-Mar-11 | |
62502Contextual Info: SPICE Device Model Si3585CDV www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si3585CDV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62502 | |
Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
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Si3585CDV 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si3585DVContextual Info: Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 0.200 @ VGS = –4.5 V –1.8 0.340 @ VGS = –2.5 V –1.2 D1 S2 TSOP-6 Top View |
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Si3585DV 18-Jul-08 | |
Si3585DV
Abstract: Si3585DV-T1-E3 Si3585DV-T1-GE3
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Si3585DV 2002/95/EC Si3585DV-T1-E3 Si3585DV-T1-GE3 18-Jul-08 | |
si3585
Abstract: mosfet 23 Tsop-6 S1217
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Si3585CDV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3585 mosfet 23 Tsop-6 S1217 | |
SI3585DVContextual Info: Specification Comparison Vishay Siliconix Si3585CDV vs. Si3585DV Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs TSOP-6 Identical Part Number Replacements: Si3585CDV-T1-GE3 replaces Si3585DV-T1-E3 Si3585CDV-T1-GE3 replaces Si3585DV-T1-GE3 |
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Si3585CDV Si3585DV Si3585CDV-T1-GE3 Si3585DV-T1-E3 Si3585DV-T1-GE3 21-Apr-11 | |
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Contextual Info: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see |
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Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si3585DVContextual Info: SPICE Device Model Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si3585DV 18-Jul-08 | |
Si3585DVContextual Info: SPICE Device Model Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si3585DV 09-Apr-03 | |
Si3585DVContextual Info: SPICE Device Model Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si3585DV S-50836Rev. 16-May-05 | |
Si3585DVContextual Info: Si3585DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 4.5 V 2.4 0.200 @ VGS = 2.5 V 1.8 0.200 @ VGS = –4.5 V –1.8 0.340 @ VGS = –2.5 V –1.2 D1 S2 TSOP-6 Top View |
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Si3585DV 08-Apr-05 | |
5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
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Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS | |
BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l |