N-P-N R.F. POWER TRANSISTORS Search Results

BLX14

Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor
Contextual Info: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo *cm ° K hFE 'ciav I ® £ % T* at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)

BLW99

Abstract: 5CCK MBH100
Contextual Info: N AMER PHILIPS/DISCRETE b^E bbSa1! » DGEtîS4li T73 BLW 99 IAPX H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor Intended fo r use in class-AB and B operated hlgh-power mobile transm itting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.

Contextual Info: N AMER PHI LIP S/ DIS CR ETE b'lE » bbSa'm DOaiSim T 73 BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.

EC900

Abstract: BLW99 2 TMT 15-4
Contextual Info: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.

Contextual Info: N AMER P H I L I P S / D I S C R E T E ^ 53= 131 0 0 3 6 7 1 4 000 b ^ E 1> IAPX BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. The transistors are resistance stabilized and guaranteed to w ith ­

Contextual Info: N AMER PHILIPS/DISCRETE bt.S3^31 D02Tb33 D32 BLX94A BLX94C b^E D J BLX94A IS MAINTENANCE TYPE IAPX U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable for transmitting applications in class-A, B or C in the u.h.f. range for a nominal supply voltage up to 28 V. The transistors are resistance stabilized and tested

r3305

Abstract: PTB32005X PTB32001X PTB32003X
Contextual Info: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: N AUER PHILIPS/DISCRETE ObE D • bb53T31 0 0 1 5 111 7 ■ PTB42001X PTB42002X J L T - 5 3 -/2 ? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz,

75307

Abstract: PTB23001X PTB23003X PTB23005X T-33-O
Contextual Info: M ObE D N AMER P H I L I P S / D I S C R E T E DG15Cm ^ 5 3 ^ 3 1 T • PTB23001X PTB23003X PTB23005X T ­ 3 3 T - -0 *7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

BFQ43S

Abstract: BFQ43 BLW31 plw7
Contextual Info: PHILIPS INTERNATIONAL b SE D • 711062b DDb2t.ll 3 74 « P H I N BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors intended fo r use in class-A, B o r C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. The transistors are resistance stabilized and guaranteed to w ith ­

BLX94C

Abstract: BLX94A BLX94
Contextual Info: L^E » N AMER PHILIPS/DISCRETE • bfc.53T31 D021b3E IAPX D3S BLX94A BLX94C J BLX94A IS MAINTENANCE TYPE U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transmitting applications in class-A, B or C in the u.h.f. range fo r a nominal supply voltage up to 28 V . The transistors are resistance stabilized and tested

BLX94A

Abstract: BLX94C 7Z66 itr 8012 rbs 6102 IEC134 BLX94
Contextual Info: b SE T> m 7110ÔSb IPHIN □ □ b 3 S 5 c] S 1G BLX94A BLX94C BLX94A IS MAINTENANCE TYPE PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transm itting applications in class-A, B o r C in the u.h.f. range fo r a nominal supply voltage up to 28 V. The transistors are resistance stabilized and tested

BFQ43

Abstract: BFQ43S lyp 809 BLW31 TRANSISTOR A1t
Contextual Info: b^E » N AMER PHILIPS/DISCRETE • ^53^31 0DHÔ714 ODD ‘' BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar e pitaxial transistors intended fo r use in class-A, B o r C operated m ob ile tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he transistors are resistance stabilized and guaranteed to w ith ­

Contextual Info: M i N AMER PHILIPS/DISCRETE ObE D • bbS3T31 _ J v □D150T1 T ■ PTB23001X PTB23003X PTB23005X T - 1 3 -o s '' T -IZ -O J MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

Contextual Info: . l .1_ _ N AMER PHILIPS/DISCRETE ObE D bb53T31 0DlS2b3 a • RZ3135B15W R Z3135B30W |3 PULSED POWER TRANSISTORS FOR S-BAN D RADAR N-P-N transistors fo r use in common-base pulsed power amplifiers fo r S-band radar 3,1 to 3,5 GHz .

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • L 353^31 0013288 3 * -LT —I I— U l DEVELOPMENT DA l Ar ' I BGY90B This data shaat contains tdvaric* information and specifications are subject to change without notice. of U.H.F. POWER MODULE The B G Y 9 0 B is a two stage u.h.f. power module designed for use in mobile transmitting equipment

BGY90B

Abstract: VS1M VSI drive mw 137 A-04 a2849
Contextual Info: N AMER PHILIPS/DISCRETE ObE J> DEVELOPMENT DAi Ai • ” b 1353^31 Q 0 1 3 H Û Û * JJ-iJ L .U U .J I BGY90B This data sheat contains advanc« in form ation and specifications are subject to change w ith o u t notice. V of U.H.F. POWER MODULE The B G Y 9 0 B is a two stage u.h.f. power module designed for use in mobile transmitting equipment

RTC3001

Abstract: RTC3003 RTC3005 PKB32001U PKB32003U PKB32005U PTB32001X PTB32003X PTB32005X 32005U
Contextual Info: N AMER PHILIPS/DISCRETE QbE » • bbSBTBl 0015CH3 T ■ p k . B 3 2 u u iu PKB32003U PKB32005U MAINTENANCE TYPES for new design use PTB32001X, PTB32003X, PTB32005X M ICRO W AVE POWER TRANSISTO RS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.

BLX65E

Abstract: Y508 BLX65ES
Contextual Info: bSE D 711005b 0Gb3S12 S17 Bi PHIN BLX65E BLX65ES PHILIPS INTERNATIONAL V.H.F./U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors in TO-39 envelope designed fo r use in portable and mobile radio transmitters in the v.h.f. and u.h.f. bands.

BGY90A

Abstract: SOT197
Contextual Info: DEVELOPMENT DATA N AflER PH ILIPS/D ISCRETE DbE D This data *h*at eortttJmi « to n e « Informitton and " 11 • BGY90A specifications art tubject to change without notice, I I ; 86D 0 1046 D T - 7 </- a tf~~ o/ U.H.F. POWER MODULE The BGY90A is a two stage u.h.f. power module designed for use in mobile transmitting equipment

Contextual Info: N AMER PHILIPS/DISCRETE ObE T> • t.b53^31 001SQT3 T ■ P K .B 3 2 U U 1 U PKB32003U PKB32005U M A IN T E N A N C E T Y P E S for new design use PTB32001X, PTB32003X, PTB32005X T - 33 - $ T- 33-0*7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.

BLX65E

Abstract: BLX65ES
Contextual Info: N AMER PHILIPS/DISCRETE b'îE » bbS3^31 DGH^blS TS3 • APX BLX65E BLX65ES J V.H.F./U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors in TO-39 envelope designed fo r use in portable and mobile radio transmitters in the v.h.f. and u.h.f. bands.