N100 Search Results

17n100a

Abstract: NC2030 17N100AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

10N100

Abstract: 12n100 N100
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C

Contextual Info: MECHANICAL DATA MPBG027 – JANUARY 1997 GGT S-PBGA-N100 PLASTIC BALL GRID ARRAY PACKAGE 11,10 SQ 10,90 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L 0,80 0,80 0,95 0,85 0,12 0,08 1,40 MAX 0,55 0,45 0,08 M 0,45 0,35 0,10 4073222/A 11/96 NOTES: A. All linear dimensions are in millimeters.

Contextual Info: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2

IXGH17N100

Contextual Info: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi

agilent 9985

Abstract: 9985+agilent
Contextual Info: 100MHz SAW Filter 9.3MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. N10016 Part Number: LB N10016 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation � Dual In-line Package

Contextual Info: Magnetic sensors MLFK 10G2124/N100 Magnetic sensors dimension drawing general data photo air gap < 0,8 mm resolution < 0,005 mm interpolation 100 times electrical data switching frequency < 400 kHz voltage supply range +Vs 8 . 28 VDC current consumption max.

Contextual Info: Magnetic sensors MLFK 10G2124/N100 Magnetic sensors dimension drawing general data photo air gap < 0,8 mm resolution < 0,005 mm interpolation 100 times electrical data switching frequency < 400 kHz voltage supply range +Vs 8 . 28 VDC current consumption max.

y5p 1000V

Contextual Info: High Voltage Ceramic Capacitors 500V-4KV HV Series MERITEK SPECIFICATIONS Operating Temperature SL and Y5P: -30oC to +85 oC Z5U and Z5V: +10oC to +85oC Temperature Characteristic Capacitance SL: P350 to N1000 Y5P: ±10% Z5U: +22/-56% Z5V: +22/-82% SL: Measured at 1 ±0.1MHz, 1Vrms max. at 25oC

10N100

Abstract: N100 12n100 TO204AA
Contextual Info: VDSS MegaMOSTMFET ID25 RDS on 1000 V 10 A 1.20 Ω 1000 V 12 A 1.05 Ω IXTH/IXTM 10 N100 IXTH/IXTM 12 N100 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V

Contextual Info: S23C03 THRU S23C36 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1001, Rev. - MARKING DIAGRAM Where 05 is S23C05 05 = Part Name Cautions：Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  86 25-87123907 •

32050R

Contextual Info: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb —FREE S n100% No No S n100% Yes Yes LF3 ELECTRICAL SPECIFICATIONS 25°C u n le ss o th e rw ise n o ted : D.C. RESISTANCE (@20*C): 4 -5 (tie 3+4, 5+6), 0.02 ohms max. 1-8, 1.45 ohms max. DIELECTRIC RATING:

15N100

Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
Contextual Info: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings

10N100

Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions

25N100

Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25

Contextual Info: Magnetic sensors MLFK 10G2124/N100 Magnetic sensors dimension drawing general data photo air gap < 0,8 mm resolution < 0,005 mm interpolation 100 times electrical data switching frequency < 400 kHz voltage supply range +Vs 8 . 28 VDC current consumption max.

Contextual Info: Magnetic sensors MLFK 10G2124/N100 Magnetic sensors dimension drawing general data photo air gap < 0,8 mm resolution < 0,005 mm interpolation 100 times electrical data switching frequency < 400 kHz voltage supply range +Vs 8 . 28 VDC current consumption max.

C289

Abstract: IXTM5N100A
Contextual Info: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il

DIODE B44 sot

Abstract: IXTK21 B44 diode IXTN21N100
Contextual Info: IXTK21 N100 N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V

Contextual Info: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 S n100% Yes No I /¿ c o m p lia n t & lJ ELECTRICAL SPECIFICATIONS 25°C u n less oth erw ise n o ted : DOT/RECESS LOCATES TERM. #1 TERM. NO.’s FOR REF. ONLY w e —midcom D.C. RESISTANCE (@20"C ):4-6; 10-12; 16-1 8 ; 2 2 -2 4 , 0.40 ohms max.

17N10

Contextual Info: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90

Contextual Info: v DSS HiPerFET Power MOSFETs ix f h /ix f m g n m IXFH/IXFM 6 N100 Symbol Test Conditions v ^ Voa« Tj = 25°C to 150°C; Vos Continuous ±20 V Transient ±30 V 6 A vesM •» ' dm dv/dt Tc Maximum Ratings = 25“C to 150°C 1 f RGS=1 M£2J \ 6N90 900 V

capacitor mems gas sensor

Abstract: SCA1000-N1000070 mems sensor
Contextual Info: SCA1000-N1000070 Accelerometer FEATURES • Silicon 3D-MEMS sensor • Dual axis X-Y measurement • ±4 g range • Over damped sensing element to control frequency response • Advanced failure detection • Lead-free reflow solderable lead free component

D1488

Abstract: TO-247 AD
Contextual Info: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings