N20 SOT23 Search Results

marking N20

Abstract: SO2222A SO2907A
Contextual Info: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A

SO2222A

Abstract: SO2907A marking n20
Contextual Info: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A

na 39

Abstract: SO2222A SO2907A
Contextual Info: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A

2222a sot23

Abstract: transistor 2222a
Contextual Info: SO2222A  SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type M arking SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS MEDIUM CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE PNP COMPLEMENTARY TYPE IS

n13 sot 65

Abstract: n13 sot 23 marking N20 SO2222 SO2222A SO2907 SO2907A
Contextual Info: SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking SO2222 N13 SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY

S02222A

Abstract: S02222
Contextual Info: SO2222 S02222A r z 7 SGS-THOM SON Ä T # KfilOeilSILIOTIfi! «! SMALL SIGNAL NPN TRANSISTORS Type Marking S02222 N13 S02222A N20 • SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION

Contextual Info: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking SO2222A N20 s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN

Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2

MARKING CODE n20

Abstract: DDTC144ECAQ-13-F N20 marking transistor marking n20
Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2

N20 marking transistor

Abstract: ddtc115eca7f Ic n13 MARKING CODE n20 N20 SOT23
Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2

Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction  Case: SOT23  Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, “Green” Molding Compound

Contextual Info: ACE306A Low Voltage Detector with Built-in Delay Circuit

Contextual Info: ACE302A Low Voltage Detector with Built-in Delay Circuit

Contextual Info: ACE302A Low Voltage Detector with Built-in Delay Circuit Description The ACE302A Series is a series of high-precision voltage detectors with a built-in delay time generator of fixed time. developed using CMOS process. The detection voltage is fixed internally, with an accuracy of ±2.0%. Internal oscillator and counter timer

Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance  Low Input Capacitance 1.8 @ VGS = 10V 500mA  Fast Switching Speed 2.0 @ VGS = 4.5V 450mA  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

g28 SOT23

Abstract: weston 461 st 95160 9418 transistor TO-92 9742 9943 so-8 9418 transistor 9806 9928 f56 dd pack m
Contextual Info: CONTENTS October 2000 OPERATING LIFE TEST SUMMARY . 2 HAST . 3 AUTOCLAVE TEST . 4

BC-337 B 011

Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation

BSN20 MARKING

Abstract: BSN20 equivalent bsn20
Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

BSN20 equivalent

Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

BSN20 MARKING

Abstract: BSN20 equivalent BSN20 sot23 marking jsp BSN20-7
Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

n24 transistor

Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 A SOT-23 3 OUT

n24 transistor

Abstract: transistor N08 DS30329
Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 A SOT-23 3 OUT

Contextual Info: BSN20 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = +25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • • Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

transistor cross reference

Abstract: RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA
Contextual Info: New Product Announcement July 2002 Announcing Full Line of 100mA Pre-biased Transistors in Surface Mount Packages Singles in SOT-523, SOT-323, SOT-23 & SC-59 Duals in SOT-363 & SOT-26 / SC-74 NPN PNP R1 R1 R2 R2 NPN Dual R 1 R2 R2 R 1 PNP Dual NPN/PNP Complementary Dual