N82S11 Search Results

82S114

Abstract: N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E
Contextual Info: S ig n e tic s Memories - Bipolar Proms C O N N E C T IO N N82S114 - 2048 Bit Field Programmable Bipolar Prom 256 x 8 G E N E R A L D E S C R IP T IO N T h e 8 2 S 1 14 is field program m able and include on-chip decoding and 2 ch ip enable inputs far ease o f m em ory

82S112

Abstract: 82S12 N82S112
Contextual Info: S ig n e tic s Memories - Bipolar SAM N82S12, N82S112 - 32 Bit Bipolar Multi- port Memory 8 x 4 G E N E R A L D E S C R IP TIO N Data is stored in a single storage m a trix w hich is add­ ressed via 2 independent sets o f address in puts, designated respectively as P ort A and P o rt B.

S8251

Abstract: 82S11 56267R signetics 82S1 82S10 82S111 N82S10 A4T10 N82S11F
Contextual Info: Signetics Memories - Bipolar Ram N82S10, N82S110, 82S11, 82S111 — 1024 Bit Bipolar Ram C O N N E C TIO N D IA G R A M G E N E R A L D E SC R IPTIO N The 8 2 S 1 0 /1 1, w ith a typ ic a l access tim e o f 30ns, is ideal fo r cache b u ffe r app lica tions and fo r systems requiring very

Contextual Info: 82S114-F.N • 82S115-F.N • Address access time: N82S114/115: 60ns max S82S114/115: 90ns max • Power dissipation: 165/^W/bit typ • Input loading: N82S114/115: -100^A max S82S114/115: -1 5 0 /jA max • On-chip storage latches • Schottky clamped • Fully T T L compatible

N82S115N

Abstract: N82S115F 82S11 82S115 82S215 N82S115 S82S115
Contextual Info: Signetics Memories - Bipolar Proms N82S115 -4 0 9 6 Bit Field Programmable Bipolar From C O N N E C T IO N D IA G R A M 8 2 S 1 15 devices are available in the com m ercial and m ilitary temperature ranges. F o r the com m ercial temperature range 0°C to + 7 5 ° C specify N 8 2 S 1 15, F or N , and for the

82S16

Abstract: N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F
Contextual Info: Signetics Memories - Bipolar Ram N82S16, N82S116, N82S17, N82S117 - 2 5 6 Bit Ram 256 x 1 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 6 / 1 16 and 8 2 S 1 7 / 1 17 are read/write m e m ory arrays w hich feature either open collector or -tri-state o utput optio ns

82S112

Abstract: 82S12 N82S112 signetics memories bipolar
Contextual Info: S ig n e tic s Memories - Bipolar S A M N82S12, N82S112 - 32 Bit Bipolar Multi- port Memory 8 x 4 G E N E R A L D E S C R IP TIO N Data is stored in a single storage m a trix w hich is add­ ressed via 2 independent sets o f address in puts, designated respectively as P ort A and P o rt B.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

74s188 programming

Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE

N82S115N

Abstract: T750C
Contextual Info: Philips Componenls-Signetics Document No. 853-0106 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S115 4K-bit TTL bipolar PROM Memory Products DESCRIPTION FEATURES The 82S115 is field programmable and includes on-chip decoding and 2 chip

6301-1 prom

Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g

N82S191

Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.

825115

Abstract: 82S115 N82S115 S82S115
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 4096-BIT BIPOLAR PROM 5 1 2 x 8 DESCRIPTION The 82S 115 is field prog ra m m a ble and in­ cludes o n -ch ip d eco d in g and 2 ch ip enable inputs fo r ease o f m e m ory expansion. It features tri-sta te o utp u ts fo r o p tim iza tio n of

6301-1 prom

Abstract: MMI 6301-1 93427C 6331-1 MMI 6341-1 dm74s472 PROM intel 3601 DM74S570 MMI 6330 N82S23
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 82HS195 T.S. 16,384-BIT BIPOLAR PROM (4 0 9 6 x 4 ) A d v a n c e Inform ation DESCRIPTION FEATURES The 82H S 19 5 is fie ld p ro g ra m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s are im m e d i a te ­

ay-5-1012

Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
Contextual Info: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS

N82S185

Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
Contextual Info: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h

N82S141

Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­

82S11

Abstract: N82S10 n82510 82S10
Contextual Info: 82S10/110-F.N • 82S11/111-F.N DESCRIPTION APPLICATIONS The 82S10/11, w ith a typ ica l access tim e of 30ns, is ideal fo r cache b u ffe r ap p lic a tio n s and fo r system s re q u irin g very high speed m ain m em ory. • • • • PIN CONFIGURATION

2650B

Abstract: wf vqc 10d alu 9308 d Signetics 2650 SN52723 2650 cpu 82S103 pipbug Signetics NE561 cd 75232
Contextual Info: flcnCTICf ßii>ouiR/mos fflICROPROCEÍSOR DATfl mnnuni SIGNETICS reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible products. Signetics also assumes no responsibility for the

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

N82S181

Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.

SIGNETICS* fusing procedure

Abstract: 82S115 825115 N82S115 S82S115 SIGNETICS prom Bipolar PROM programming signetics generic procedure
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 82S115 PROGRAMMING PROCEDURE PRO G RAM M ING SYSTEM SP E C IF IC A T IO N S Testing o f these lim its m ay cause p rog ra m m in g o f device. T a = +25°C LIM ITS TE S T C O N D IT IO N S PARAMETER UN IT Min Max V Power su p p ly voltage