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    Micron Technology Inc NAND08GW3B4CZL6E

    NAND Flash Parallel 3V/3.3V 8Gbit 1G x 8bit 25us 52-Pin ULGA Tray - Trays (Alt: NAND08GW3B4CZL6E)
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    Avnet Americas NAND08GW3B4CZL6E Tray 18 Weeks 672
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    STMicroelectronics NAND08GW3B2CN6E

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    Component Electronics, Inc NAND08GW3B2CN6E 1,170
    • 1 $38.46
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    NAND08GW3B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NAND08GW3B2A Numonyx 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND08GW3B2A STMicroelectronics 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND08GW3B2AN1E Numonyx 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND08GW3B2AN1E STMicroelectronics 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF

    NAND08GW3B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD97

    Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 JESD97 NAND04GW3B2B NAND08GW3B2A NAND04

    block code error management, verilog

    Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 block code error management, verilog NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B

    NUMONYX

    Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		PDF NAND04GW3B2B NAND08GW3B2A Byte/1056 NUMONYX JESD97 NAND04GW3B2B NAND08GW3B2A

    ULGA52

    Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
    Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		PDF NAND04G-B2D NAND08G-BxC 2112-byte/1056-word ULGA52 NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C

    LGA-52

    Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
    Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage


    Original     		PDF NAND04G-B2D, NAND08G-BxC byte/1056 LGA-52 LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint

    HY27UU088G5M

    Abstract: HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48 HY27UU088G5M HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu

    Untitled

    Abstract: No abstract text available
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48

    "NAND Flash"

    Abstract: AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand
    Text: AN1793 APPLICATION NOTE How to Use the Chip Enable Don’t Care Option in Single Level Cell NAND Flash Memories This Application Note describes how to use the Chip Enable Don’t Care feature, which is available in both the NANDxxx-A and NANDxxx-B families of Single Level Cell SLC NAND Flash memories, and outlines


    Original     		PDF AN1793 128Mbits 25thout "NAND Flash" AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand

    NAND512W3A 64MB

    Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
    Text: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system


    Original     		PDF FLNANDF0106 NAND512W3A 64MB STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B

    verilog code hamming

    Abstract: c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code
    Text: AN1823 APPLICATION NOTE Error Correction Code in Single Level Cell NAND Flash Memories This Application Note describes how to implement an Error Correction Code ECC in ST Single Level Cell (SLC) NAND Flash memories, that can detect 2-bit errors and correct 1-bit errors per 256 or 512 Bytes.


    Original     		PDF AN1823 Byte/1056 verilog code hamming c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code

    E2 nand flash

    Abstract: st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A
    Text: AN1759 APPLICATION NOTE How to Connect Single Level Cell NAND Flash Memories to Build Storage Modules This application note explains how to connect two or more Single Level Cell NAND Flash memories to a microcontroller system bus, to build storage modules.


    Original     		PDF AN1759 NAND128R3A NAND256R3A NAND512R3A NAND01GR3A NAND128W3A NAND256W3A NAND512W3A NAND01GW3A NAND128R4A E2 nand flash st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A

    NAND FLASH TRANSLATION LAYER FTL

    Abstract: "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820
    Text: AN1821 APPLICATION NOTE Garbage Collection in Single Level Cell NAND Flash Memories This Application Note describes the Garbage Collection algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION


    Original     		PDF AN1821 NAND FLASH TRANSLATION LAYER FTL "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820

    AN1822

    Abstract: NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL
    Text: AN1822 APPLICATION NOTE Wear Leveling in Single Level Cell NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION In ST NAND Flash memories each physical block can be programmed or erased reliably over 100,000


    Original     		PDF AN1822 AN1822 NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL

    Untitled

    Abstract: No abstract text available
    Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		PDF NAND04G-B2D NAND08G-BxC 2112-byte/1056-word TSOP48

    NAND512B

    Abstract: SD 1083 0.65mm pitch BGA NAND08G-B NAND04G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 NAND01G-B
    Text: NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


    Original     		PDF NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B Byte/1056 64Mbit NAND512B SD 1083 0.65mm pitch BGA NAND08G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63

    block code error management, verilog

    Abstract: flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63
    Text: NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array


    Original     		PDF NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit block code error management, verilog flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63

    HR911105A

    Abstract: HR911105 HanRun hr911105a maxim rs232 protection overvoltage SWITCHING TRANSISTOR C144 Hanrun Zener C212 Zener C237 hanrun rj45 rs485 to db9 connector datasheet
    Text: UM0843 User manual EVALSPEAr310 - evaluation board for the SPEAr310 1 Description This user manual describes how to use the EVALSPEAr310 evaluation board for SPEAr310. It is intended to be used for three main purposes: • To allow you to quickly evaluate and debug software for the SPEAr310


    Original     		PDF UM0843 EVALSPEAr310 SPEAr310 SPEAr310. SPEAr310 RS232 RS485 HR911105A HR911105 HanRun hr911105a maxim rs232 protection overvoltage SWITCHING TRANSISTOR C144 Hanrun Zener C212 Zener C237 hanrun rj45 rs485 to db9 connector datasheet

    LGA52

    Abstract: LGA-52 NAND04GW3B2D nand flash ONFI 3.0 NAND08GW3B2C NAND04GR4B2D NAND04G-B2D NAND04GR3B2D ONFI nand NAND LGA52
    Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage


    Original     		PDF NAND04G-B2D, NAND08G-BxC byte/1056 TSOP48 LGA52 LGA-52 NAND04GW3B2D nand flash ONFI 3.0 NAND08GW3B2C NAND04GR4B2D NAND04G-B2D NAND04GR3B2D ONFI nand NAND LGA52

    NAND04GB2D

    Abstract: NAND04G-B2D
    Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		PDF NAND04G-B2D NAND08G-BxC 2112-byte/1056-word TSOP48 NAND04GB2D NAND04G-B2D

    FLASH TRANSLATION LAYER FTL

    Abstract: marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A
    Text: AN1820 APPLICATION NOTE How to Use the FTL and HAL Sotfware Modules to Manage Data in Single Level Cell NAND Flash Memories This Application Note gives an overview of the architecture of the Flash Translation Layer FTL and Hardware Adaptation Layer (HAL) software modules, which allow operating systems to read and write to NAND


    Original     		PDF AN1820 FLASH TRANSLATION LAYER FTL marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A

    AN1793

    Abstract: NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B 128Mbits nand256w3a
    Text: AN1793 APPLICATION NOTE How to Use the Chip Enable Don’t Care Option in Single Level Cell NAND Flash Memories This Application Note describes how to use the Chip Enable Don’t Care feature, which is available in both the NANDxxx-A and NANDxxx-B families of Single Level Cell SLC NAND Flash memories, and outlines


    Original     		PDF AN1793 128Mbits 25thout AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B nand256w3a

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    HY27Uu088G5m

    Abstract: HY27UT084G2M 29f8g08 29F2G08 HY27UT0 HY27UU08 NDK America HY27UG084G2M HY27UT08 TH58NVG*D
    Text: ST72682 USB 2.0 high-speed Flash drive controller Not For New Design Features • ■ USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY – Supports USB high speed and full speed – Suspend and Resume operations LQFP64 10x10


    Original     		PDF ST72682 LQFP64 10x10 512-byte HY27Uu088G5m HY27UT084G2M 29f8g08 29F2G08 HY27UT0 HY27UU08 NDK America HY27UG084G2M HY27UT08 TH58NVG*D

    29F2G08

    Abstract: HY27Uu088G5m 29f8g08 HY27UT084G2M 29F2G08A HY27Uu08 HY27UU088 29f4g08 hy27uu TH58NVG*D
    Text: ST72682 USB 2.0 high-speed Flash drive controller Not For New Design Features • ■ USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY – Supports USB high speed and full speed – Suspend and Resume operations LQFP64 10x10


    Original     		PDF ST72682 LQFP64 10x10 512-byte 29F2G08 HY27Uu088G5m 29f8g08 HY27UT084G2M 29F2G08A HY27Uu08 HY27UU088 29f4g08 hy27uu TH58NVG*D