j175 replacement
Abstract: No abstract text available
Text: LSJ175 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix J175 The LSJ175 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 nchannel family, the LSJ175 simplifies series-shunt
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LSJ175
J/SST111
j175 replacement
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Untitled
Abstract: No abstract text available
Text: LSJ175 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix J175 The LSJ175 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 nchannel family, the LSJ175 simplifies series-shunt
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LSJ175
J/SST111
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4893
FX853
FX853
2SK1467
SB05-05P,
FX853]
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8B221
Abstract: 3508D FST163212 IDT74FST163212 generator 3508 1a23a 3508
Text: 24-BIT BUS EXCHANGE SWITCH IDT74FST163212 Integrated Device Technology, Inc. FEATURES: source capability. They generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through an nchannel FET. When the gate-to-source junction of this FET
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24-BIT
IDT74FST163212
SO56-1)
O56-2)
O56-3)
3508drw
8B221
3508D
FST163212
IDT74FST163212
generator 3508
1a23a
3508
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MPS top marking
Abstract: LN60A01 LN60A01E D3S34 LN60A01EP MS-001 JESD51-7 LN60 MPS top marking A
Text: LN60A01 600V, Triple N-Channel MOSFET with Common Gate Control The Future of Analog IC Technology DESCRIPTION FEATURES The LN60A01 is a three channel, 600V NChannel, enhancement mode power FET manufactured in MPS's proprietary, highvoltage DMOS technology.
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LN60A01
LN60A01
LN60A01EP
MPS top marking
LN60A01E
D3S34
MS-001
JESD51-7
LN60
MPS top marking A
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ta9192
Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15
Text: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,
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O205AF)
RFL4N12,
RFL4N15
25BVDSS
AN7254
AN7260.
ta9192
TA919
AN7260
RFL4N12
RFL4N15
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Untitled
Abstract: No abstract text available
Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings
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JANSR2N7278
FRL234R4
1000K
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Untitled
Abstract: No abstract text available
Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings
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JANSR2N7272
FRL130R4
1000K
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Untitled
Abstract: No abstract text available
Text: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 23A, 200V, rDS ON = 0.115Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings
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JANSR2N7294
FRF250R4
1000K
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MLP8 package
Abstract: MLP8 FOOTPRINT FAN3111C
Text: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications. 1.4A Peak Sink / Source at VDD = 12V 1.1A Sink / 0.9A Source at VOUT = 6V
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FAN3111
FAN3111C
FAN3100C
FAN3111
MLP8 package
MLP8 FOOTPRINT
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IRF820
Abstract: irf-82
Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()
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IRF820
IRF82
O220AB
IRF820
irf-82
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IRFP150N
Abstract: No abstract text available
Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,
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IRFP150N
O-247
IRFP150N
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2N67
Abstract: 2N6784 TB334
Text: [ /Title 2N67 84 /Subject (2.25A , 200V, 1.500 Ohm, NChannel Power MOSFET) /Autho r () 2N6784 Data Sheet December 2001 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.25A, 200V The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for
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2N6784
2N6784
O-205AF
2N67
TB334
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MP6507
Abstract: No abstract text available
Text: MP6507 2.7V-to-15V, 700mA, Bipolar Stepper-Motor Driver with Integrated MOSFETs The Future of Analog IC Technology FEATURES DESCRIPTION The MP6507 is a bipolar stepper-motor driver with dual, built-in full-bridges consisting of Nchannel power MOSFETs. It operates from a supply voltage range of 2.7V
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MP6507
V-to-15V,
700mA,
MP6507
700mA
16-pin,
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Piezoelectric 1Mhz
Abstract: piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G
Text: TC1550 Initial Release N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors
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TC1550
TC1550TG-G
27BSC
DSFP-TC1550
NR092806
Piezoelectric 1Mhz
piezoelectric transducer
27BSC
MD1210K6
TC1550
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GRM21BR71C475KA73L
Abstract: No abstract text available
Text: MIC5019 Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump General Description The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an NChannel enhancement type MOSFET control signal in high-side or low–side applications.
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MIC5019
MIC5019
MIC5019ellectual
GRM21BR71C475KA73L
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Text: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,
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JANSR2N7401
FSS234R4
R2N74
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSS234R4
JANSR2N7401
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Rad Hard in Fairchild for MOSFET
Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700
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JANSR2N7278
FRL234R4
R2N72
1000K
100opment.
Rad Hard in Fairchild for MOSFET
mosfet 250V 4A
1E14
2E12
FRL234R4
JANSR2N7278
MOSFET A3
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mlp8 Package
Abstract: mlp8 land pattern MLP8 FOOTPRINT fairchild MLP8 FAN3111C
Text: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description • • 1.4A Peak Sink / Source at VDD = 12V The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications.
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FAN3111
FAN3111C
FAN3100C
470pF
FAN3111
mlp8 Package
mlp8 land pattern
MLP8 FOOTPRINT
fairchild MLP8
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TC4007UBP
Abstract: No abstract text available
Text: TP^ fin"#7UDr/ 1IDD/UDl IMDC IU“UU C 2MOS DIGITAL IN T E G R A T E D CIR CU IT S IL IC O N M O N O L IT H IC TC4007UBP/TC4007UBF DUAL COMPLEMENTARY PAIR PLUS INVERTER TC4007UBP/UBF contains three elements of P-channel enhancement type MOS FET and three elements of Nchannel enhancement type MOS FET. One pair of Pchannel and N-channel functions as inverter and
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TC4007UBP/TC4007UBF
TC4007UBP/UBF
TC4007UBP/UBF
TC4007UBP
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Trac12
Abstract: AC12 DH16 DS16 WCS17 ice power 200 asc
Text: O B JE C T IV E S P E C IF IC A T IO N 2690-2— F ,I,N • 2690-3— F ,I,N • 2690-4— F,I,N D E S C R I P T IO N FEATU RES The 2690 is fab ricate d w ith d o u b le -p o ly nchannel s ilic o n gate te c h n o lo g y fo r high perform ance and hig h fu n c tio n a l d e nsity. It
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16-pin
Trac12
AC12
DH16
DS16
WCS17
ice power 200 asc
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FET Spec sheet
Abstract: mitsubishi microwave MGFC1801 4468 fet fet 4468
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The MGFC1801 medium-power GaAs FET with an Nchannel Schottky gate is designed for use in S to X band amplifiers and oscillators.
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MGFC1801
MGFC1801
100mA
FET Spec sheet
mitsubishi microwave
4468 fet
fet 4468
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Untitled
Abstract: No abstract text available
Text: Central sem iconductor Corp. CM PF4416A SILICON N-CHANNEL JFET DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPF4416A type is an epoxy molded NChannel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications.
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PF4416A
CMPF4416A
OT-23
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Untitled
Abstract: No abstract text available
Text: 24-B IT BUS SW IT CH IDT74FST1 63211 lating two ports without providing any inherent current sink or source capability. They generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through an nchannel FET. When the gate-to-source junction of this FET
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IDT74FST1
FST163xxx
2000v
MIL-STD-883,
200pF,
FST163211
T74FST163211
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