ND02D1 Search Results

full subtractor using NOR gate for circuit diagram

Abstract: full subtractor circuit using nor gates AX277 2 bit full adder SIGNAL PATH DESIGNER full subtractor circuit using nand gate
Contextual Info: VITESSE SEMICONDUCT OR 30E D H '1502331 GODDeTb 5 * V T S T -M -H ! Features • VLSI Complexity: > 35,000 Gates •Very Low Power Disspation • Superior Performance: 300M Hz to 3 GHz ■High Yielding, 4 Layer Metal, VLSI Process • Choice of Operating Temperature Ranges:

PC6015

Contextual Info: SI ERRA SEMI CONDUCTOR '»r SIERRA SEMICONDUCTOR ÇORP 47E ì> 0242010 0001724 T «SSC Semicustom Capability Analog, Digital and EEPROM combined on the same chip. Sierra is a leading supplier of m ixed-signal standard cell ASICs. The Com pany's unique Triple Technology process perm its the

design an 8 Bit ALU using VHDL software tools -FP

Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
Contextual Info: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,

PT6005

Abstract: VSC300
Contextual Info: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith

VGT300039

Abstract: PT6045 VGT300022 PT6005
Contextual Info: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology

HP83000

Abstract: Electro SEX X81D1 HP8300 X41D ECL IC NAND
Contextual Info: • 7 Ô1 1 D 7 3 O G lb a ^ O Tas B R K Iil Cyclone Series Cyclone Series GaAs Gate Arrays Rockwell Introduction The sub-micron Cyclone Series™ of GaAs gate arrays from Rockwell represent the culmination of over ten years of research and development.

T6004

Abstract: PT6005
Contextual Info: S7E D HARRIS S E M I C O N D SE CT OR Bl 4302671 DDlböDS b 1 HAS CGA200 Seríes Advance Information Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate Array Series Features: • C ontin uou s Gate architectu re offers m axim um layou t e fficie ncy w ith 30% gate u tilizatio n fo r random logic

R/CHN 041 diode

Contextual Info: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency

Contextual Info: High-Reliability ASICs CGA100 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series

VLSI Technology

Abstract: kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification VGT300 "VLSI Technology Inc." PT6055 GAH 521 fabrimex
Contextual Info: V L S I T ec h n o lo g y , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES s • Advanced f.O microp/fdrawn silicon gate'techrrology • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency

CGA10-016

Contextual Info: . H Ig h -R riia b illty A S IC s CGA10 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. Continuous Gate* Technology 2-Micron CMOS Gate-Array Series

RS flip flop cmos

Abstract: full subtractor circuit using nor gates PC7001 subtractor using TTL CMOS full subtractor circuit using and gates RCA 528 CGA100-121 PC7003 AD01D1 CGA100
Contextual Info: High-Retiability ASICs CGA100 Series These data sheets are provided fo r technical guidance only. The "final device perform ance may vary depending upon the final device design and configuration. Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series

full subtractor circuit using decoder and nand ga

Abstract: full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005
Contextual Info: VLSI T e c h n o l o g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • A vaila b le in th irte e n sizes from 960 to 54,000 usable gates The V G T 200 Series is an advanced, high performance C M O S gate array

PC5004

Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Contextual Info: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz

Kt 0912

Abstract: full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968
Contextual Info: V L SI Technology, inc . PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES 7 FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates (12,149 to 66,550 available gates The VGT100 Series is an advanced,

PT6045

Abstract: VSC370 PT6005
Contextual Info: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology

ST CHN 021

Abstract: 13003 PT6005 PT6001
Contextual Info: V L S I TECHNOLOGY INC IflE D VLSI T ech n o lo g y T36Ô347 DGD3E7ti 3 in c . VSC320 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL FEATURES • A dvanced 1-m icron drawn gate length , silicon gate C M O S , 2-layer metal technology • Fast design tu rn-around tim e w ith

full subtractor circuit using decoder and nand ga

Abstract: full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram
Contextual Info: V L S I Technology , in c PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates 12,149 to 66,550 available gates The VGT100 Series is an advanced,

130 nm CMOS standard cell library

Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
Contextual Info: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS

ND02D1

Abstract: pc7004 PC7001
Contextual Info: HARRIS SEMICOND SECTOR 37E D 4305271 G024S75 S • HAS 'TA'L- H-OR Application Specific iCs C G A 1 00 Series Advance Information Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series Features: ■ Continuous Gate architecture offers maximum layout

Transistor ge 718

Abstract: IN01D3 CGA10-016
Contextual Info: HA RR IS SEflICOND S E C T O R ^ 3 ? E D 4 3 0 5 27 1 O G S M S b S Application Specific /Cs ö «HAS CGA10 Series Advance Information Continuous Gate* Technology 2-Micron CMOS Gate-Array Series Features: • Continuous Gate architecture offers maximum layout

nd02d2

Contextual Info: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design

Arm processor vlsi technology

Abstract: PC302 QFP 128 bonding
Contextual Info: VLSI T e ch n o lo g y o.5-m ic r o n in c. _ PRELIMINARY ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.5-micron 0.45-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec

PT6042

Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Contextual Info: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS