NDP4060 Search Results

NDB4060L

Abstract: NDP4060L 24V64 zener diode 12v 0.5 w
Contextual Info: April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDB4060L

Abstract: NDP4060L
Contextual Info: & Na t i o n a I Semiconductor” A p ril 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 15A, 60V. RDS 0NI = O .m @ VGS = 5V power field effect transistors are produced using

Contextual Info: F A IR C H IL D SEM IC ONDUCTO R April 1996 tm NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's

NDP4060L

Abstract: NDB4060L
Contextual Info: A p ril 1996 FAIRCHILD Ml C O N D U C T O R i NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's

NDB4060

Abstract: NDP4060
Contextual Info: July 1996 Nationa I Semiconductor " NDP4060/ NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS technology.

Contextual Info: S E M IC O N D U C T O R tm NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has

NDB4060

Abstract: NDP4060
Contextual Info: J u ly 1 9 9 6 FAIRCHILD MICDNDUCTDR tm NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

NDB4060L

Contextual Info: ^ A I R C H April 1996 I I - D M l C O IN D U C T O R NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: July 1996 F A IR C H IL D SEM ICONDUCTO R tm NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

NDB4060

Abstract: NDP4060
Contextual Info: July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 15A, 60V. RDS ON = 0.10Ω @ VGS=10V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

FDP2670

Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
Contextual Info: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and

CBVK741B019

Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
Contextual Info: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

high voltage mosfet, to-220 case

Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

T0-263

Abstract: CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220
Contextual Info: FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage

FDB7045L

Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
Contextual Info: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

TO220 Semiconductor Packaging

Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
Contextual Info: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

zener diode 3.0 b2

Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
Contextual Info: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
Contextual Info: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

12SnOFC

Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
Contextual Info: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

Contextual Info: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.

FDP5680

Contextual Info: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features • 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters