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    onsemi NDT014

    MOSFET N-CH 60V 2.7A SOT-223-4
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    DigiKey NDT014 Cut Tape 17,747 1
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    onsemi NDT014L

    MOSFET N-CH 60V 2.8A SOT223-4
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    DigiKey NDT014L Cut Tape 7,778 1
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    NDT014L Digi-Reel 7,778 1
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    Aptina Imaging NDT014L

    Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R
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    Verical NDT014L 28,000 4,000
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    Fairchild Semiconductor Corporation NDT014

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    Fairchild Semiconductor Corporation NDT014L

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    NDT014 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDT014 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT014 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT014 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT014 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDT014J23Z Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT014L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDT014L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDT014L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDT014L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDT014LJ23Z Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDT014L_NL Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDT014_NL Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDT014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDT014

    Abstract: No abstract text available
    Text: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDT014 NDT014

    Untitled

    Abstract: No abstract text available
    Text: August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density


    Original     		PDF NDT014L

    Untitled

    Abstract: No abstract text available
    Text: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDT014

    NDT014

    Abstract: No abstract text available
    Text: N September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDT014 NDT014

    Untitled

    Abstract: No abstract text available
    Text: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDT014

    NDT014L

    Abstract: No abstract text available
    Text: N August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.This very high density


    Original     		PDF NDT014L NDT014L

    CBVK741B019

    Abstract: F63TNR F852 NDT014 PN2222A
    Text: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDT014 CBVK741B019 F63TNR F852 NDT014 PN2222A

    Untitled

    Abstract: No abstract text available
    Text: August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density


    Original     		PDF NDT014L 16roduct

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: MAX5216LPT Evaluation Kit Evaluates: Reference Design of 4 –20mA Loop-Powered Transmitter General Description Features The MAX5216LPT evaluation kit EV kit enables evaluation of the loop-powered 4–20mA current-loop transmitter with the fault current-limiting capabilities and Highway


    Original     		PDF MAX5216LPT MAX5216 16-bit MAX6133 MAX9620 MAX15007

    AS3606

    Abstract: booster pcb AS3607 QFN32 QFN36 QFN36_6X6MM
    Text: Data Sheet AS3606 AS3607 System PMU with HV Back Light Driver 1 General Description HV Backlight Driver Step up for 30V backlight with internal transistor The AS3606/07 is an ultra compact System PMU with integrated battery charger and HV back light driver.


    Original     		PDF AS3606 AS3607 AS3606/07 AS3606/07. 500mA booster pcb AS3607 QFN32 QFN36 QFN36_6X6MM

    QFN36

    Abstract: AS3608 ntc10k0 QFN 64 PACKAGE rth
    Text: Data Sheet AS3608 System PMU with HV Back Light Driver 1 General Description HV Backlight Driver Step up for 30V backlight with internal transistor The AS3608 is an ultra compact System PMU with integrated battery charger and HV back light driver. The device offers advanced power management functions. All


    Original     		PDF AS3608 AS3608 AS3608. 500mA QFN36 ntc10k0 QFN 64 PACKAGE rth

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet AS3606 AS3607 System PMU with HV Back Light Driver 1 General Description HV Backlight Driver Step up for 30V backlight with internal transistor The AS3606/07 is an ultra compact System PMU with integrated battery charger and HV back light driver.


    Original     		PDF AS3606 AS3607 AS3606/07 AS3606/07. 500mA

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    Untitled

    Abstract: No abstract text available
    Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com


    Original     		PDF AS3606 AS3607 AS3606/07

    NDT014L

    Abstract: MOC3
    Text: & June 1996 N ational Semiconductor PRELIMINARY " NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDT014L L5D1130 NDT014L MOC3

    yt 6ca diode

    Abstract: No abstract text available
    Text: F / M R C H A ug ust 1996 1 1 _ D iM IC D N D U C TO R tm NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description T h ese N -C hannel logic level enhance m en t m ode po w e r field effect tra nsistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDT014L -0-029lg yt 6ca diode

    NDT014

    Abstract: lc 501130
    Text: National June 1996 Semiconductor" NDT014 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancem ent m o d e pow er field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS tech no lo g y.


    OCR Scan     		PDF NDT014 bS0113D GDMDD73 b50113D NDT014 lc 501130

    top 223 equivalent

    Abstract: NDT014L j009
    Text: FAIRCHILD iMICDNDUCTDR A ug ust 1996 t m NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDT014L l-004 0-23j- to-261, sot223, top 223 equivalent NDT014L j009

    C60N

    Abstract: No abstract text available
    Text: August 1996 N NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel logic level en hance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S tech nolog y.T h is v e ry high density


    OCR Scan     		PDF NDT014L OT-223 C60N

    NDT453N

    Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
    Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |


    OCR Scan     		PDF T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N