NE 556 APPLICATIONS Search Results

NE556 pin configuration

Abstract: ne 556 timer NE556-1N NE5561 NE556-1 555 TIMER APPLICATIONS ne556 astable NE556-1F NE556D NE556N
Contextual Info: Philips Semiconductors Linear Products Product specification Dual timer NE/SA/SE556/NE556-1 DESCRIPTION PIN CONFIGURATION Both the 556 and 556-1 Dual Monolithic timing circuits are highly stable controllers capable of producing accurate time delays or oscillation. The 556 and 556-1 are a dual 555. Timing is provided by

NE556 pin configuration

Abstract: ne 556 timer ne556n equivalent NE 555 timer 556 Dual on off Timer NE5561 NE556-1 NE556N NE556F 555 timer
Contextual Info: P hilips S em iconductors Linear Producta P roduct specification Dual timer NE/SA/SE556/NE556-1 DESCRIPTION PIN CONFIGURATION Both the 556 and 556-1 Dual Monolithic timing circuits are highly stable controllers capable of producing accurate time delays or

glc556

Abstract: GLC555
Contextual Info: GLC555/556 CMOS GENERAL PURPOSE TIMER Pin Configuration Description The GLC555/6 are CMOS RC tinners providing significantly improved performance over the standard SE/NE555/6 and 355 timers, while at the same time being direct replacements for those devices in most applications.

signetics 555

Abstract: signetics 556
Contextual Info: Signelics N E /S A /S E 5 5 6 /N E /S A / SE556-1/SE556-1C Dual Timer Product Specification Linear Products DESCRIPTION FEATURES Both the 556 and 556-1 Dual Monolithic timing circuits are highly stable control­ lers capable of producing accurate time delays or oscillation. The 556 and 556-1

6u8 tube

Abstract: 6U8A tube 6u8 TUBE 6U8A I960 TD1072 general electric
Contextual Info: 6U8-A/5U8 ET-T1270A Page 1 6U8-A/5U8 3-40 TRIODE-PENTODE TUBES DESCRIPTION A N D RATING The 6U8-A is a miniature tube which contains a sharp-cutoff pentode and a medium-mu triode in one envelope. Each section has a separate cathode and is electrically independent. The tube is primarily intended for service as a com­

ne 556 timer

Abstract: ne556n equivalent 015 capacitor philips 555 timer ne 555 timer monostable ne 555 NE556N 555 timer pulse generator ne 556 applications
Contextual Info: INTEGRATED CIRCUITS NE/SA556 Dual timer Product data Replaces NE/SA/SE556/NE556-1 of 1994 Aug 31 IC11 Philips Semiconductors 2001 Aug 03 Philips Semiconductors Product data Dual timer NE/SA556 DESCRIPTION PIN CONFIGURATION Both the NE556 and SA556 Dual Monolithic timing circuits are highly

NE556n pin configuration

Abstract: ne556d NE556F NE556N ne 556 timer NE556 SE556 SE556F 555 missing pulse detector circuit 555 timer pulse generator
Contextual Info: 556 DMH^DIL Dual Precision Tim er FEATURES GENERAL DESCRIPTION • Timing from microseconds to hours • Operates In both astable and monostable time delay modes • High output current • Adjustable duty cycle • TTL compatible • Temperature stability of 0.005%/ °C

XR-556

Abstract: XR-556CP XR556CP 556cp 556 astable 556CN 556 IC TIMER 556 Dual Timer XR556 XR556CN
Contextual Info: EX AR CORP 3422618 » F | 3 4 5 5 blû 0 D 0 4 M 5 L 1 f EXAR CORP ' 9 1D OTS/-/*? 04426 Z * EX4R XR-556 Dual Timer G ENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM E The XR-556 dual tinning circuit contains two Indepen­ dent 555-type timers on a single monolithic chip. It is a

Contextual Info: HD404678/HD4074678 Description The HD404678 and HD4074678 are 4-bit single­ chip H M CS400 series microcomputers for telephone applications, which are designed to increase program productivity along with a highprecision dual-tone multifrequency DTMF receiver that is especially suitable for answering

Contextual Info: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)

TRANSISTOR C 3223

Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
Contextual Info: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

RF3800

Abstract: rf3800pcba-416 RF3800TR7 J-STD-033A 144353
Contextual Info: RF3800 RF3800GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: AlN „ 6 W Output Power „ High Linearity „ >50% Efficiency „ SI G „ Thermally-Enhanced AlN Packaging 150 MHz to 960 MHz Operation

pulse h1251

Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters
Contextual Info: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common

MPS5179

Abstract: TRANSISTOR C 3223 MPS5179 small signal transistor MMBT5179 PN5179
Contextual Info: MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

transistor rc4

Abstract: MMBT5179 MPS5179
Contextual Info: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common

Contextual Info: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector

Motorola ULN2004A

Abstract: mc14111 Motorola ULN2003A MC141 MC1411P MC1412 MC1413D MC1412D LN2001A MC1416P
Contextual Info: Order this data sheet by MC141 l/D MC1411,B MC1412,B MC1413,B MC1416,B HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS The seven NPN Darlington connected transistors in these arrays are well suited for driving [amps, relays, or printer hammers in a

PN4258

Abstract: IC NE 556 MJE 350 PNP power transistor MMBT4258
Contextual Info: PN4258 MMBT4258 C E C B TO-92 SOT-23 E B Mark: 78 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

431 regulator

Abstract: EZ1087 EZ1087CT M33S
Contextual Info: ä fS lM 3 ^ u -u m m 5.0 AMP REMOTE SENSE V0LTAGE REGULATOR EZ1087 TEL: 805-498-2111 FEATURES Low dropout performance, 1.3V max. Kelvin Remote Sense Inputs Line regulation typically 0.015% Load regulation typically 0.1% 5-pin TO-22Q package ABSOLUTE MAXIMUM RATINGS

MPSH10 fairchild transistor

Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

PN2369A

Abstract: IC NE 556 Rise time 1 ns MMBT2369A MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23
Contextual Info: PN2369A MMBT2369A MMPQ2369 C B E E E B B E B E C TO-92 BE SOT-23 B C SOIC-16 Mark: 1S C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*

C184Y

Abstract: 74fct163244 63H24
Contextual Info: fax id: 7048 C Y 7 4 F C T 1 C Y 7 4 F C T 1 6 3 2 4 4 6 3 H 2 4 4 16 Bit Buffers/Line Drivers Features Functional Description • SV tolerant Inputs and Outputs T h e s e 16-bit bu ffe rs/line drivers are designed fo r use in m em o ry driver, clock driver, or other bus interface applications,

DIGITA ECHO DELAY

Contextual Info: HC-5560 HARRIS S E M I C O N D U C T O R PCM Transcoder J a n u a ry 1997 Features Description • Single 5V S u p p ly .10mA Typ T he H C -556 0 digita l line tra n sco d e r provides e n cod ing and decod ing o f pseudo te rn a ry line code sub stitution schem es.

Thyratron 5948

Abstract: cold cathode thyratron Thyratron 5949 thyratrons thyratron tube operation thyratron radar tube 5949 thyratron
Contextual Info: t e n t a t iv e 5948 data ,- TU IIO S OL N THYRATRON HEATER AC OR DC base d o w n T H E 5 9 4 8 I S A T H R E E ELE C T R OD E, HYDROGEN F I L L E D , Z ERO B I A S THYRATRON D E S IG N E D FOR THE GENERAT I ON OF H IGH POWER P U L S E S . THE P R IM A R Y A P P L I C A T I O N