NE300357B20 Search Results

Contextual Info: NE300357B20 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)18 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

NE1010E

Abstract: NEM4203 nel130681 NEL132081-12 NE1010E-20 NEL1320 NEM2003B NE4203 NEL130681-12 NEM054029-28
Contextual Info: LT . N E C / - - CALIFORNIA 15E D • L4S7414 0001515 2 ■ 7^33-Oj Additional Power Silicon Bipolar Products t - 3 J - qi ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS hFE PACKAGE CODE VCBO VCE V Ic (A) Pt (V) (C/W) <W) (V) Ic« (mA) TYP NEL130681-12

NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Contextual Info: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­

NE3005B-20

Abstract: a1289 ne3003 ne3005b NE3001B-20 NE3003B-20 NEM3001B-20 NEM3003B-20 NEM3005B-20 NEM3008B-20
Contextual Info: NEC/ CALIFORNIA 47E D • b 4 2 ? m 4 GG0E227 3Sä « N E C C MICROWAVE DEVICES cont. PART NUMBER PACKAGE STYLE FREQUENCY RANGE (GHz) SUPPLY VOLT. (V) C LASS OF OPER. TYP. TYR P out P out (dBm) <W) TYP. GAIN (dB) TYP. EFFIENCY (% ) 37.0 5.0 6.0 28.0 3.0