NE329 Search Results

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

Contextual Info: PRELIMINARY DATA SHEET IV IF f / HETERO j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION N E 3 29 00 is H etero J u n ctio n F E T chip th a t utilizes the hetero ju n ctio n betw een S i-d op ed A IG aA s and un do pe d

Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I ds = 10 mA • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 21 12.5 dB Typical at 12 GHz 00 •a • Lg < 0.20 urn, W g = 200 im

NE329S01

Abstract: NE329S01-T1 NE329S01-T1B
Contextual Info: SUPER LOW NOISE HJ FET NE329S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz • GATE LENGTH: 0.2 µm • GATE WIDTH: 200 µm

Contextual Info: NONLINEAR MODEL SCHEMATIC NE329S01 CGD_PKG 0.001pF Ldx DRAIN Q1 Lgx GATE 0.56nH Rdx 6 ohms Rgx 0.64nH 6 ohms Lsx 0.06nH CGS_PKG 0.055pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1

U/25/20/TN26/15/850/NE32984D

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vd s b 2V , Io s - 1 0 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m TJ • Lg S 0 .2 0 |im , W g = 2 0 0 |u n

FET model

Abstract: NE32900
Contextual Info: NONLINEAR MODEL SCHEMATIC NE32900 Ldx DRAIN 0.28nH Q1 Lgx GATE 0.35nH Lsx 0.025nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units VTO -0.825 RG 7 time seconds VTOSC RD 4 capacitance farads ALPHA 7 RS 4 inductance

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

NE32984D

Abstract: NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m • Lg < 0.20 ^m, WG = 200 \im

5282 F 1349

Contextual Info: _ DATA SHEET_ IV IF f * / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ESC R IPTIO N The NE329S01 is a Hetero Junction FET that utilizes the

840-SL

Abstract: NE32984D U/25/20/TN26/15/850/NE32984D
Contextual Info: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED FEATURES GAIN v« FRFOMFWrV Vos = 2 V, lo i a 10 IÎ1A • VERY LOW NOISE FIGURE: 0.40 d 8 Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 0 8 Typical at 12 GHz ai • La i 0.20 pm . W o • 200 nm

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE329S01 N O IS E F IG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y S U P E R L O W N O IS E F IG U R E : 0.35 dB Typ at f = 12 GHz H IG H A S S O C IA T E D G A IN : m T> < 3 1 3 .0 d B T y p a tf = 12 GHz G A T E L E N G TH : 0.2 jim

0747

Abstract: NE32900
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32900 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 d B T y p a tf = 12 GHz • HIGH ASSOCIATED GAIN:

D2504 transistor

Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low

NEC D74

Abstract: transistor D113 NEC D76 NE32900 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped

low noise, hetero junction fet

Abstract: NE32984D NE32984D-S NE32984D-T1 IS21S
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE

NEC Ga FET marking L

Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm

NE32900

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32900 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES SUPER LOW NOISE FIGURE: 0.35 dB T yp at f = 12 G Hz HIGH ASSOCIATED GAIN: m T> < 1 3 . 0 d B T y p a t f = 12 G Hz GATE LENGTH: 0.2 jim 3 ro GATE W IDTH: 200 jim

22S21

Abstract: NE329 NEC Ga FET marking A
Contextual Info: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
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NE32900

Abstract: 4560d
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid