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    NE68739R Search Results

    NE68739R Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE68739R NEC NPN silicon high frequency transistor. Original PDF
    NE68739R-T1 NEC Original PDF

    NE68739R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    84t MARKING

    Abstract: marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 LEADS 1, 3, 4 0.16 +0.10


    Original
    PDF NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 84t MARKING marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R

    SE 7889

    Abstract: 2SC5182 2SC5184 2SC5185 2SC5186 NE687 NE68718 NE68719 NE68730 NE68733
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH 19 3 PIN ULTRA SUPER MINI MOLD 18 (SOT 343 STYLE) • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original
    PDF NE687 8739R NE687 SE 7889 2SC5182 2SC5184 2SC5185 2SC5186 NE68718 NE68719 NE68730 NE68733

    LB 11911

    Abstract: 80500 TRANSISTOR mje 2055 ic 45800 KF 80500 IC 14553 60E-12 KF 80-500 9971 TRANSISTOR C 5706
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)


    Original
    PDF NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 24-Hour LB 11911 80500 TRANSISTOR mje 2055 ic 45800 KF 80500 IC 14553 60E-12 KF 80-500 9971 TRANSISTOR C 5706

    LB 11911

    Abstract: 80500 TRANSISTOR MJE 2655 2SC5182 2SC5184 2SC5185 2SC5186 NE687 NE68718 cce 7100
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)


    Original
    PDF NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 24-Hour LB 11911 80500 TRANSISTOR MJE 2655 2SC5182 2SC5184 2SC5185 2SC5186 NE68718 cce 7100

    LB 11911

    Abstract: SE 7889 85500 transistor NE687 NE68718 NE68719 NE68730 NE68733 2SC5182 mje 2055
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH 19 3 PIN ULTRA SUPER MINI MOLD 18 (SOT 343 STYLE) • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original
    PDF NE687 8739R NE687 LB 11911 SE 7889 85500 transistor NE68718 NE68719 NE68730 NE68733 2SC5182 mje 2055

    169800

    Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)


    OCR Scan
    PDF NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 169800 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan
    PDF OT-23) NE68018

    NE68019

    Abstract: NE68839 NE68018 NE68719
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3


    OCR Scan
    PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719

    sot 326

    Abstract: 338 sot-23 NE68530 NE02139
    Text: Low Noise Bipolar Transistors ' *- i NHG* Vcc 1111UM HF K ’ TYP ÛA TYP VCE V M Ì I TEST Part TYP (dB) fr TYP la tu t Hfis TYP 1c F a im SURFACE MOUNT PLASTIC NE68018 2.0 6 5 ’ 1.8 10.0 6 10 9.5 10.0 100 35 (SOT-343) 18 7 1.2 13.5 8 20 15.0 9.0 100


    OCR Scan
    PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 sot 326 338 sot-23 NE68530 NE02139

    ST 80500 transistor

    Abstract: ST 80500 LB 11911 ST 9727 74200 MARKING AG1 NE687 ka 2201 323 IK 9094 cd 9094
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES_ • LOW NOISE: 1.3 dB AT 2.0 GHz 4 fr • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SO T 343 ST Y LE 19(3 PIN ULTRA S U P E R


    OCR Scan
    PDF NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 ST 80500 transistor ST 80500 LB 11911 ST 9727 74200 MARKING AG1 ka 2201 323 IK 9094 cd 9094

    80500 TRANSISTOR

    Abstract: mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562
    Text: NE687 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz 4 ! • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SO T 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)


    OCR Scan
    PDF NE687 NE687 NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 E68739-T1 NE68739R-T1 24-Hour 80500 TRANSISTOR mje 2055 transistor lr 3303 KF 80500 LB 11911 0103 MA WJ 73 KF 80-500 NE68719 049E-9 transistor k 3562

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


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    PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    JRC 45800

    Abstract: 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES . L O W N O IS E : 1.3 dB A T 2 .0 G H z • L O W V O L T A G E O P E R A T IO N • EASY T O M ATCH • H IG H G A IN B A N D W ID T H P R O D U C T : f ï o f 13 G H z • A V A IL A B L E IN S IX L O W C O S T P L A S T IC S U R F A C E


    OCR Scan
    PDF NE687 OT-143} NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 JRC 45800 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586

    NE68018

    Abstract: 814T
    Text: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89


    OCR Scan
    PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T