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    NEC Electronics Group NE900175

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    NE900175 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE900275

    Abstract: NE900175 ne900075 NE900200 S50240 NE900100G NE9002 ne900 NE9001 NE900000
    Contextual Info: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • TYPICAL LINEAR GAIN vs. FREQUENCY CLASS A OPERATION HIGH OUTPUT POWER POUT = 26.5 dBm G1dB = 7 dB 24 21 HIGH POWER ADDED EFFICIENCY Linear Gain dB • • DESCRIPTION


    Original     		NE9000 NE9001 NE9002 NE9000, NE9001, NE900000, NE900100, NE900200, NE900275 NE900175 ne900075 NE900200 S50240 NE900100G ne900 NE900000 PDF

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    ne900075

    Abstract: NE9000
    Contextual Info: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27


    OCR Scan     		NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000 PDF

    NE900275

    Contextual Info: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • CLASS A OPERATION • HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7dB • HIGH POWER ADDED EFFICIENCY *D DESCRIPTION ¡3 O 5 The NIE9000, N E 9 0 0 1 , and N E 9 0 0 2 are 0.5 micron recessed


    OCR Scan     		NE9000 NE9001 NE9002 NIE9000, IS12S21I NE900275 PDF

    NE900275

    Abstract: NE900175 ne900075 3232 marking RF 98 NE9000
    Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 75 +0.15 -0.05 2 PLACES f 1.8 GATE 0.5 ± 0.1 SOURCE 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP 7.0 +0.06 0.1 -0.02 9.8 MAX 2.85 1.13 0.9 MAX


    Original     		NE900075 NE900175 NE900275 24-Hour NE900275 NE900175 ne900075 3232 marking RF 98 NE9000 PDF

    NE900175

    Contextual Info: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES TYPICAL UNEAR GAIN vs. FREQUENCY • CLASS A OPERATION • HIGH OUTPUT POWER 3 o u t = 26.5 dBm 3idB - 7 dB • HIGH POWER ADDED EFFICIENCY DESCRIPTION The NE9000, N E 9001, and NE9002 are 0.5 micron recessed


    OCR Scan     		NE9000 NE9001 NE9002 NE9000, E900100, E900200, E900000, E900200 NE900175 PDF

    NE900275

    Abstract: NE9002
    Contextual Info: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES . CLASS A OPERATION . HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7 d B • HIGH POWER ADDED EFFICIENCY CÛ *o DESCRIPTION 3 The NE9000, NE9001, and NE9002 are 0.5 micron recessed


    OCR Scan     		NE9000 NE9001 NE9002 NE9000, NE9001, theNE900000, NE900100, NE900200, NE900000, NE900275 PDF

    NE800495-4

    Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
    Contextual Info: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D


    OCR Scan     		NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD MEZ4450-4D NEZ4450-4DD MEZ5964-15D NEZ5964-15DD NEZ5964-8D KEZ5964-8DD NE800495-4 GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196 PDF