NEC D 553 C Search Results

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

NEC TV MODULE

Contextual Info: DATA SHEET PHOTO DIODE NDL5551P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 4*50 /vm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5551P Series are InGaAs avalanche photo diode modules with multimode fiber. detectors of long wavelength transmission systems and cover the wavelength range between

transistor AFR 16

Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
Contextual Info: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

BN1F4M

Contextual Info: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR BN1F4M The B N 1F4M is designed for use in medium speed switching PACKAG E D IM E N S IO N S circuit. FEATURE in m illim ete rs inches 4 .2 MAX. (0.1 6 5 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit.

3692 nec

Contextual Info: PRELIMINARY DATA SHEET IV IF f / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

HT - 0886

Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Contextual Info: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2

AI820

Abstract: 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A
Contextual Info: SEC i ï f / \ Y r 7 •J- ^ . C /-a - ê - h =7 V C o m p o u n d T ra n s is to r AA1 F4M ÎfiÎÆ F *3Ü cN P N xt°^41'> 7 '^ i f é ^ ,J 4# Y:7 > i > 7 . 9 i . mm, i t R i = 22 k Q , R 2= 22 k Q o AN1F4M t =t > ~7° 'J / > ? ij Ttë t l i t c

Triac t460

Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Contextual Info: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •

2SJ356

Abstract: NEC 2Sj356 TC-8009
Contextual Info: = t-5 > • 5 / - h NEC ^ MOS W M tt* h 7 > v ^ ^ MOS Field Effect Transistor 2SJ356 r M OS FET 3â{i 2SJ356t ¿P31 - ^ U » M O S FETT' , 5 V t S ^ I C O t t i t iC ¿ i ¡ S : mm i g i l l i X < -y ? > Î ' I f î î o Ÿ Sp p l â ' t ' > f i i / L ^ ' f g ; <

nec 2501 904

Abstract: AN 17821 audio nec 303 j fet nec 7912
Contextual Info: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION

c1677C

Abstract: P12152E C1677 C10535E PC1677C TRANSISTOR 1616 ac
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1677C 5 V-BIAS, +19.5 dBm OUTPUT, 1.8 GHz WIDE BAND SiMMIC AMPLIFIER DESCRIPTION The µPC1677C is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter

Contextual Info: PRELIMINARY DATA SHEET CM O S INTEGRATED CIRCUIT JE C / MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM: ¿iPD4217405 are assembled.

uD16312

Abstract: 6312 vfd IC-3307 NEC Vacuum Fluorescent Display
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT //P D 1 6 3 1 2 1/4- to 1/11-DUTY FIP VFD CONTROLLER/DRIVER The //PD16312 is a FIP (fluorescent Indicator Panel, or Vacuum Fluorescent Display) controller/driver that is driven on a 1/4- to 1/11 duty factor. It consists of 11 segment output lines, 6 grid output lines, 5 segment/grid output

Contextual Info: NEC NEC Electronics Inc. //PD411001 1 ,0 4 8 ,5 7 6 X 1-BIT DYNAMIC NMOS RAM PRELIMINARY INFORMATION Description Pin Configurations The/¿PD411001 is a nibble mode version 1,048,576word by 1-bit dynam ic N-channel MOS random access memory RAM . It is designed to operate from a single

6008A

Abstract: B0952 nec 1251 T108 H052
Contextual Info: Com pound T r a n s is t o r FN1A4P * £ Î/ lF * 3 1 P N P I t & • = !> V = 7 > i > ^ m ^ - f ï • mm) 0 ' < j T ?,}& }?[£ fàiië 1 1 È 1 0 ( R, = 10 kQ, R 2= 47 kQ) 2 .8 ± 0 .2 0 .6 5 Î";!: 1.5 O F A 1 A 4 P t =J > v ” IJ / > ? u Tê t t G

UPC1653

Abstract: UPC1653A UPC1653P UPC1654 1653A DB1316
Contextual Info: NEC 1.0 G Hz BANDWIDTH SILIC O N M M IC AMPLIFIER UPC1653A UPC1653P FEATU RES N O IS E F IG U R E A N D P O W E R G AIN • BROAD FREQUENCY R E SP O N SE 1300 M H z T Y P a! 3 dB Down so • INPUT AND OUTPUT MATCHED TO 50 Q 25 • AVAILABLE IN CHIP OR HERMETIC PACKAG E

O552

Abstract: T108 asti 3773 GA1L3N la 5531 L092 GN1L3N mol3
Contextual Info: i. I «\ / v r * l?N I i ï T ÎK r NEC C o m p o u n d T ran sis to r GN1L3N ffif/L r t i e p n p :n t f * * y□v ^ v i* * :? n Sfc U v ^ to R i = 4 .7 k fì, R 2= 10 k£2 o G A 1 L 3 N t 3 > y }) / > ? i) X " itm X"ê i i ~ (Ta = 25 °C) H g 9 n u ?

xeh 250 120

Abstract: T108 TC-6056 UUJK
Contextual Info: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

SD113

Abstract: SD116 d11510 50117 SD117 SD115 042646 SD111 1866 sd1173
Contextual Info: S 1 D 1 3 , S 1 D R 1 5 . S i S o f f ia SD 1 1 6 , 1 6 D 1 1 7 , S f it NEC Corporation 1988 : mm SD 1 1 7 vi^DHD (D o u b le H e a tsin k 7 ^ 'y — 1 K m SD 1 1 3 , SD 1 1 5 , D D io d e) ÿ 0.5 t f ¿ , -, sxnt £ & ^ è U "? T M & t ^ , f ^ i i i D H D f l l & i C j :