s-parameter s11 s12 s21 10000
Abstract: nec 151 C10535E NE721S01 NE721S01-T1 NE721S01-T1B nec 7912 um 741 AN 17821 audio
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @f = 12 GHz PACKAGE DIMENSIONS • Gate Length: Lg = 0.8 µm recessed gate (Unit: mm) • Gate Width: Wg = 330 µm
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NE721S01
NE721S01-T1
NE721S01-T1B
s-parameter s11 s12 s21 10000
nec 151
C10535E
NE721S01
NE721S01-T1
NE721S01-T1B
nec 7912
um 741
AN 17821 audio
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NEC 2933
Abstract: CMOS 5408 a1241 nec V830 mcu transistor 13009 V810 V30MX V830 V851 V853
Text: NEC Electronics Inc. CB-C9VX 3.3-Volt, 0.35-Micron Cell-Based CMOS ASIC Preliminary Description NEC’s CB-C9VX CMOS cell-based ASIC family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macro functions
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35-Micron
27-micron
A12411EU2V0DS01
NEC 2933
CMOS 5408
a1241
nec V830 mcu
transistor 13009
V810
V30MX
V830
V851
V853
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CMOS-6A
Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC
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IP-8090
CMOS-6A
F223
65630
F304
f422
F501 MOS
l442
bt08
700201
L421 Marking
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC8110GR 1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION D ES C R IP TIO N The //PC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for
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uPC8110GR
//PC8110GR
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nec 2501 904
Abstract: AN 17821 audio nec 303 j fet nec 7912
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION
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NE721S01
NE721S01-T1
E721S01-T1B
nec 2501 904
AN 17821 audio
nec 303 j fet
nec 7912
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nec 78078gf
Abstract: 78078GC D78076 78078gf
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JJPD78076, 78078 8-BIT SINGLE-CHIP MICROCONTROLLER D E S C R IP T IO N The ¿xPD78076, and 78078 are ideal for AV products. Besides a high-speed, high-perform ance CPU, these m icrocontrollers have on-chip ROM, RAM, I/O ports,
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uPD78076
uPD78078
xPD78076,
/PD78P078
PD78076GC
jPD78078GC-
nec 78078gf
78078GC
D78076
78078gf
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bv0T
Abstract: 658X
Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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b4E75S5
QQ3T701
nPD658xx
bv0T
658X
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IKC 913
Abstract: D78P018 NEC D780 Crystal oscillator MEC 12 MHz
Text: DATA SHEET NEC MOS INTEGRATED CIRCUI 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION T h e ¿¿PD78P018FY is a m em ber of the ¿¿PD78018FY subseries of 78K/0 series products. T h e internal m ask R O M of the /¿PD78018FY is replaced with one-time P R O M or E PRO M .
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uPD78P018FY
uPD78018FY
78K/0
PD78P018FY
/PD78P018FYDW
78P018FYKK-S
iPD78P018FYCW
64-pin
iPD78P018FYDW
IKC 913
D78P018
NEC D780
Crystal oscillator MEC 12 MHz
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
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PD4516421,
16M-bit
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
S50G5-80-7JF3
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN A R Y PRODUCT IN FO R M A TIO N MOS INTEGRATED CIRCUIT uPD784025,784026 16-/8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The //PD784026 is 78K/II+ subseries product The /JPD784026 is approximately twice as fast as the ¿¿PD78324 subseries, and offers significant improvements over |tPD78324 subseries functions, such as 16-bit timer counters,
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uPD784025
16-/8-BIT
//PD784026
78K/II+
/JPD784026
PD78324
tPD78324
16-bit
IEU-850
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diode ru4d
Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Text: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r
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aPD658xx
diode ru4d
ru4f
bvde
RJ4B
364-pin
ITT 2222 A
rj8b
diode ru4d compatible
"RJ-49"
FWB1
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nec gaas fet marking
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 ¿¡m recessed gate • Gate Width: Wg = 330 ¿¡m • Plastic package PACKAGE DIMENSIONS
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NE721S01
NE721S01-T1
NE721S01-T1B
C10535E)
IR30-00
nec gaas fet marking
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D e s c r ip tio n T h e /¿PD 42S16400L, 42 1 6400L, 42S 17400 L, 4 2 1 740 0 L are 4 ,1 94,304 w o rd s by 4 bits dyna m ic C M O S R A M s. T he
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
42S16400L,
6400L,
26-pin
VP15-207-2
IR35-207-2
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uc8151
Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
Text: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for
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uPC8128TB
uPC8151TB
uPC8152TB
/xPC8128TB,
8151TB
8152TB
uc8151
TPC815
UPC 1035
8151T
upc 814 l nec
uPC 1163 A
upc 1478
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d4516161
Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
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uPD4516421
uPD4516821
uPD4516161
16M-bit
PD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
d4516161
NEC 1216
D451616
4516161
IC-3394
ba6x
T8836
D4516161GS
d4516
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT li PD16732A, 16732B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES The n PD16732A, 16732B are a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of
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PD16732A,
16732B
384-OUTPUT
64-GRAY
16732B
S13972EJ1V0DS00
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NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
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NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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uPD42S18160L
uPD4218160L
16-BIT,
/iPD42S18160L,
4218160L
PD42S18160L
50-pin
42-pin
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FTTL 655
Abstract: D78243 UPD78243 kb 7k1 78244 PD78213GC A2JB P65a TP5AD ltzt
Text: MOS JjliS|[°Iii?§ M O S In te g ra te d C irc u it PD78243,78244 ¿¿PD78243, 78244 i, EEPROM (5 1 2 A < h $ - ^ I L /c 78K/D v U-X'(7)S^nnn T 'T o CCOv U - X 't e , ^ 3 ‘J 1 M / ^ h(7^y i 'J ^ T7 ^ t ^ X"# ^ 8 1"-y h • y > ^ f 7 7 - 7 < — ? X "T 0
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uPD78243
uPD78244
PD78243,
78K/D
78K/D
//PD78244)
PD78243)
UPD78243)
FTTL 655
D78243
kb 7k1
78244
PD78213GC
A2JB
P65a
TP5AD
ltzt
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2SK17S
Abstract: Nec K 872 EN 60 751
Text: MOS FIELD EFFECT POWER TRANSISTORS 2SK1750,1750-Z/2SK1751,1751-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2SK1750/2SK 1751 is N -c h a n n e l M O S F ie ld E ffe c t T ra n s is t o r d e s ig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .
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2SK1750
1750-Z/2SK1751
1751-Z
2SK1751
2SK17S0-Z,
2SK1751-Z
2SK1750,
1750--Z/2SK1751,
2SK17S
Nec K 872
EN 60 751
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6400L-A5G
Abstract: d4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/iPD42S16400L,
4216400L,
42S17400L,
4217400L
JUPD42S16400L,
42S17400L
6400L-A5G
d4216400
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NEC uPD 833
Abstract: TRW 8805 OA625
Text: DATA SHEET MOS INTEGRATED CIRCUIT juPD42S4260AL, 424260AL 3.3 V OPERATION 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S4260AL, 424260A Lare 262 144 words by 16 bits dynamic CM O S RAMs. The fast page mode and
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uPD42S4260AL
uPD424260AL
16-BIT,
/iPD42S4260AL,
24260A
PD42S4260AL
44-pin
40-pin
P40LE-400A-2
42S4260A
NEC uPD 833
TRW 8805
OA625
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MC-424000A8FA-60
Abstract: MC-424000A8
Text: NEC MOS INTEGRATED CIRCUIT MC-424000A8 SERIES 4 M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w o rd s by 8 b its dyn a m ic RAM m o d u le on w h ic h 8 pieces o f 4M DRAM /iPD424100 are assem bled. This m o d u le pro v id e s high d e n s ity and large q u a n titie s o f m e m o ry in a sm a ll space w ith o u t u tiliz in g the
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MC-424000A8
uPD424100
MC-424000A8BA,
424000A8FA
30B-100A3-2
MC-424000A8FA-60
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