CMOS-6A

Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
Contextual Info: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC8110GR 1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION D ES C R IP TIO N The //PC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for

nec 2501 904

Abstract: AN 17821 audio nec 303 j fet nec 7912
Contextual Info: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION

nec 78078gf

Abstract: 78078GC D78076 78078gf
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT JJPD78076, 78078 8-BIT SINGLE-CHIP MICROCONTROLLER D E S C R IP T IO N The ¿xPD78076, and 78078 are ideal for AV products. Besides a high-speed, high-perform ance CPU, these m icrocontrollers have on-chip ROM, RAM, I/O ports,

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

IKC 913

Abstract: D78P018 NEC D780 Crystal oscillator MEC 12 MHz
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUI 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION T h e ¿¿PD78P018FY is a m em ber of the ¿¿PD78018FY subseries of 78K/0 series products. T h e internal m ask R O M of the /¿PD78018FY is replaced with one-time P R O M or E PRO M .

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

Contextual Info: PR ELIM IN A R Y PRODUCT IN FO R M A TIO N MOS INTEGRATED CIRCUIT uPD784025,784026 16-/8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The //PD784026 is 78K/II+ subseries product The /JPD784026 is approximately twice as fast as the ¿¿PD78324 subseries, and offers significant improvements over |tPD78324 subseries functions, such as 16-bit timer counters,

diode ru4d

Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Contextual Info: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r

nec gaas fet marking

Contextual Info: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 ¿¡m recessed gate • Gate Width: Wg = 330 ¿¡m • Plastic package PACKAGE DIMENSIONS

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D e s c r ip tio n T h e /¿PD 42S16400L, 42 1 6400L, 42S 17400 L, 4 2 1 740 0 L are 4 ,1 94,304 w o rd s by 4 bits dyna m ic C M O S R A M s. T he

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

uc8151

Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
Contextual Info: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

NEC 2933

Abstract: CMOS 5408 a1241 nec V830 mcu transistor 13009 V810 V30MX V830 V851 V853
Contextual Info: NEC Electronics Inc. CB-C9VX 3.3-Volt, 0.35-Micron Cell-Based CMOS ASIC Preliminary Description NEC’s CB-C9VX CMOS cell-based ASIC family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macro functions

d4516161

Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT li PD16732A, 16732B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES The n PD16732A, 16732B are a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

FTTL 655

Abstract: D78243 UPD78243 kb 7k1 78244 PD78213GC A2JB P65a TP5AD ltzt
Contextual Info: MOS JjliS|[°Iii?§ M O S In te g ra te d C irc u it PD78243,78244 ¿¿PD78243, 78244 i, EEPROM (5 1 2 A < h $ - ^ I L /c 78K/D v U-X'(7)S^nnn T 'T o CCOv U - X 't e , ^ 3 ‘J 1 M / ^ h(7^y i 'J ^ T7 ^ t ^ X"# ^ 8 1"-y h • y > ^ f 7 7 - 7 < — ? X "T 0

2SK17S

Abstract: Nec K 872 EN 60 751
Contextual Info: MOS FIELD EFFECT POWER TRANSISTORS 2SK1750,1750-Z/2SK1751,1751-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2SK1750/2SK 1751 is N -c h a n n e l M O S F ie ld E ffe c t T ra n s is t o r d e s ig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .

6400L-A5G

Abstract: d4216400
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The

NEC uPD 833

Abstract: TRW 8805 OA625
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT juPD42S4260AL, 424260AL 3.3 V OPERATION 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S4260AL, 424260A Lare 262 144 words by 16 bits dynamic CM O S RAMs. The fast page mode and

MC-424000A8FA-60

Abstract: MC-424000A8
Contextual Info: NEC MOS INTEGRATED CIRCUIT MC-424000A8 SERIES 4 M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w o rd s by 8 b its dyn a m ic RAM m o d u le on w h ic h 8 pieces o f 4M DRAM /iPD424100 are assem bled. This m o d u le pro v id e s high d e n s ity and large q u a n titie s o f m e m o ry in a sm a ll space w ith o u t u tiliz in g the