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    NEC Electronics Group NE32584C-T1

    TRANSISTOR,MESFET,N-CHAN,4V V(BR)DSS,20MA I(DSS),SOT-173VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE32584C-T1 8
    • 1 $12
    • 10 $6
    • 100 $6
    • 1000 $6
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    NE32584 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32584 NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32584C NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32584C NEC Semiconductor Selection Guide Original PDF
    NE32584C NEC Semiconductor Selection Guide 1995 Original PDF
    NE32584C Unknown Scan PDF
    NE32584C-S NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32584C-SL NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32584C-T1 NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32584C-T1 NEC Ultra low noise pseudomorphic HJ FET. Original PDF
    NE32584C-T1A NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF

    NE32584 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 8772

    Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE32584C NE32584C NE32584C-S NE32584C-T1 24-Hour nec 8772 LD 7522 142.58 NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442

    0.01pF

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE32584C SCHEMATIC see Page 2 FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -0.6723 RG 3 VTOSC RD 2 ALPHA 4 RS 2 BETA 0.115 RGMET GAMMA 0.08 KF GAMMADC 0.07 AF 1 Q 2 TNOM 27 DELTA 0.5 XTI 3 VBI 0.715 EG 1.43 IS 3e-13


    Original     		PDF 3e-13 5e-12 13e-12 3e-12 02e-12 NE32584C NE32584C 001pF 0.01pF

    NE32584

    Abstract: FET 3878 NE32584C NE32584C-S NE32584C-SL NE32584C-T1 162-7 MAG
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE


    Original     		PDF NE32584C NE32584C NE32584C-S NE32584C-T1 NE32584C-SL 84C-SL 24-Hour NE32584 FET 3878 NE32584C-S NE32584C-SL NE32584C-T1 162-7 MAG

    NE42484A

    Abstract: ne32584c NE33284A
    Text: Suggested Low Noise Amplifier Lineups 4 GHz Commercial LNA Performance 25°K LNA NE33284A NF dB GA (dB) 0.35 15.0 NE42484A 0.38 15.6 NE42484A 0.38 15.6 NF: 0.362 GA: 46.2 12 GHz Commercial LNA Performance 35°K LNA NE32584C NF (dB) GA (dB) 0.45 12.5 EXCLUSIVE NORTH AMERICAN AGENT FOR


    Original     		PDF NE33284A NE42484A NE32584C 24-Hour NE42484A ne32584c NE33284A

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    NE42484

    Abstract: NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 84 1.78 ± 0.2 S 1.78 ± 0.2 D W S G 0.5 ± 0.1 ALL LEADS 1.0 MIN (ALL LEADS)- (84S/84AS) 1.7 MIN (ALL LEADS) (84-SL/84A-SL) 1.7 MAX


    Original     		PDF 84S/84AS) 84-SL/84A-SL) NE32484A NE42484A NE32584C NE76084 NE32984D NE76184A NE33284A NE42484 NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    transistor d525

    Abstract: D128 transistor D1439 transistor D128 D1116 transistor d745 D559 transistor d1406 transistor d717 d3140
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


    OCR Scan     		PDF NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428

    nec 8772 p

    Abstract: 5252 F 1120 nec 8772 cha 9935 ic an 17807 5252 F 1114 142.58 LD 7522
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz • Lg < 0.20 ^m, WG = 200 \im


    OCR Scan     		PDF NE32584C NE32584C NE32584C-S NE32584C-T1 24-Hour nec 8772 p 5252 F 1120 nec 8772 cha 9935 ic an 17807 5252 F 1114 142.58 LD 7522

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    NE32484C-S

    Abstract: GA 88 ne32584c NE32584C-SL
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES_ NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I d s = 10 mA • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz


    OCR Scan     		PDF NE32584C NE32584C IS12S21I 00Li545b NE32484C-S NE32484C-T1 NE32584C-SL 84C-SL b42752Â GA 88

    NE32484C-T1

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 2 V, Ids = 10 m A • VERY LOW NOISE FIGURE: 0 .4 5 d B T y p ic a l at 12 G H z • HIGH A SSO CIATED GAIN: 1 2 .5 d B T y p ic a l at 12 G H z CO •


    OCR Scan     		PDF NE32584C S12S21| NE32584C E32484C NE32484C-T1 E32584C 84C-SL

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0.45 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 21 12.5 dB Typical at 12 GHz m •o • Lg < 0.20 nm, W g = 200


    OCR Scan     		PDF NE32584C NE32584C 3e-13 5e-12 13e-12 3e-12 02e-12 NE32584C-S NE32584C-T1

    NE32484C-S

    Abstract: NE32484C-T1 NE32584C
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , Ids = 10 mA • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m • L g £ 0 .2 0 p m , W g = 2 00 urn


    OCR Scan     		PDF NE32584C NE32584C b4275Z5 NE32484C-S NE32484C-T1 NE32584C-SL 84C-SL bM2752S 00b5457

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089