NEC MICROWAVE Search Results

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

A98-KMP6J1F1-1A

Abstract: pc based rf wireless controlled toy car docomo LED highlight SMS controlled LED based scrolling message display NEC AMERICA Car cigar charger mobile phone repair hands free microphone Yamaha Musical
Contextual Info: CopyrightÓ 2003 by NEC America, Inc. All rights reserved. NEC is a registered trademark of NEC Corporation. All other company or product names are the trademarks of their respective owners. Manual Part Number: 621-0351 Version 1.4* *This may include features not available in all NEC 525 phones, or may not include features available in updated or later version 525 phones. Contact NEC Service Support with any

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

FIP6C13

Abstract: FIP7B13 NEC FIP FIP5B15 FIP6F13 FIP6A13 FIP20X2AC FIP6D15 FIP11F10 FIP5D8
Contextual Info: FIP Products Selection Guide August 1994 1994 NEC Electronics Inc. All rights reserved. Printed in U.S.A. FIP is a registered trademark of NEC Corporation. 1 NEC’s FIP Panels Perform the Crucial Role of Conveying Accurate Information 2 Features •

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

2SA1224

Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­

2SC1600

Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is

uPD78F0513A

Abstract: UPD78F0730 PG-FP5 Flash Memory Programmer uPD78F0376 uPD78F0515A GLASS BREAK sensor uPD78F0451 upD78F0503A mPD78F0475 mPD78F0500A
Contextual Info: For further information, please contact: NEC Electronics Corporation 1753, Shimonumabe, Nakahara-ku, Kawasaki, Kanagawa 211-8668, Japan Tel: 044-435-5111 http://www.necel.com/ [America] [Europe] [Asia & Oceania] NEC Electronics America, Inc. 2880 Scott Blvd.

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

LT746

Abstract: tdk fcr CG208 1S1211 JPD75P216A PD75CG208 400M-2
Contextual Info: N E C ELECTRONICS INC 3QE D NEC NEC Electronics Inc. Description The /iPD7520x/7521x is a family of single-chlp CMOS microcomputers containing CPU, ROM, RAM, I/O ports, several timer/counters, vectored interrupts, a FiP controller/driver, subsystem clock, and serial interface.

Contextual Info: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1

NE41607

Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e

NE85630

Abstract: nec03 NE68030 NE68130 2SC4227 2SC4228 NE68330 NEC0330 NE68030 NEC Mini-Mold
Contextual Info: NEC/ CALIFORNIA 5bE 3> NEC • hM2?mM 0002352 MbM MNECC 30 PACKAGE SUPER MINI-MOLD FEATURES OUTLINE DIMENSIONS Unite in mm • 40 % REDUCTION IN FOOTPRINT AREA (from SOT-23) OUTLINE 30 • 30 % REDUCTION IN HEIGHT (from SOT-23) «— 2 .1± 0.1 — : • 50% REDUCTION IN WEIGHT

NE98203

Abstract: 2SC1662 NE98200 NE98208 2SC1660 NE98241 S21E
Contextual Info: NEC/ CALIFORNIA 5bE D b427414 GODESSE =Î43 « N E C C - T -3 1 -Z NEC NE98200 NE98203 NE98208 NE98241 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • W ID E D Y N A M IC R A N G E The N E982 series of N PN silicon transistors features a high

IC-3125

Abstract: NEC TUNER ICs
Contextual Info: DATA SHEET_ NEC BIPOLAR NALOG NTEGRATED IRCUIT 0PC2726T 1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The /¿PC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier.

LDB 107

Contextual Info: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

NEC DIE BONDER

Abstract: die-attach
Contextual Info: USER’S MANUAL NEC USER’S MANUAL FOR MICROWAVE DEVICE CHIP HANDLING [Silicon Transistors, GaAs FETs, H J-FETs, GaAs MMICs] 1. INTRODUCTION In recent years, m iniaturizing the dimensions o f electronic devices and improving device performance have been extensively

2sC4703

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage V ce = 5 V . This low distortion

Contextual Info: NEC MEDIUM POWER 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER UPC1654A UPC1654B UPC1654P FEATURES DESCRIPTION AND APPLICATIONS • BROADBAND PERFO RM ANCE: 10 to 1100 MHz The UPC1654 Silicon Microwave Monolithic IC is designed for general purpose and IF amplifier applications. This

NEL230397

Abstract: NEL132081-12 NEL230297 NEL130681-12 NEL151081-12 NEL230153 NEL230220 NEL150181-12 NEL150481 NEL230257
Contextual Info: NEC/ CALIFORNIA 47E » • fc.M2?m4 0DG52Sb «NECC MICROWAVE DEVICES PART NUMBER PACKAGE STYLE FREQUENCY RANGE GHz SUPPLY VOLT. (V) CLASS OF OPER. TYP. TYP. Pout Pout (dBm) (W) TYP. GAIN (dB) TYP. EFFICIENCY (%) TEST INTERNAL FREQUENCY MATCHING (GHz) IN/OUT

NF 831

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG503B 9 GHz DIVIDE-BY-4 PRESCALER DESCRIPTION The /¿PG503B is a GaAs divide-by-4 prescaler capable of operating up to 9 GHz. It is intend to be used in the frequency synthesizers of microwave application systems

nec 2501 Le 629

Abstract: 3771 nec nec d 1590
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.

SG 2368

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB typ.