NEC RF SWITCH Search Results

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

nec VARIABLE CAPACITANCE DIODE

Abstract: ND6361-3A ND6361-3D diode 3D
Contextual Info: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

1SV80

Abstract: NEC DO-35 bectron
Contextual Info: NEC PIN DIODE ELECTRON DEVICE 1SV80 VHF/UHF RF ATTENUATIG AND SWITCHING SILICON PIN DIODE D ESCR IPTIO N A N D A P P LIC A T IO N S FE A TU R E S • Low cost. The 1SV80 silicon PIN diode, especially designed fo r V H F /U H F band sw itching, attenuating.

44-PIN

Abstract: UPB1009K VP215 6128MHZ
Contextual Info: NEC’s LOW POWER GPS RF RECEIVER BIPOLAR ANALOG + INTEGRATED CIRCUIT UPB1009K DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF filter, 4-bit ADC, and digital control interface to reduce cost and mounting space. In addition, its power consumption

gps frequency synthesizer

Abstract: 44-PIN UPB1009K VP215 ic 565 application frequency synthesizer
Contextual Info: NEC’s LOW POWER GPS RF RECEIVER BIPOLAR ANALOG + INTEGRATED CIRCUIT UPB1009K DESCRIPTION The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF filter, 4-bit ADC, and digital control interface to reduce cost and mounting space. In addition, its power consumption

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

TC-8008

Abstract: 2SJ355 xz43
Contextual Info: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

NEC RF Switch CMOS

Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The μPD5738T6N is a CMOS MMIC DPDT Double Pole Double Throw switch which is developed for mobile communications, wireless communications and another RF switching applications.

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. <R> This device can operate frequency from 0.01 to 2.0 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. This device can operate frequency from 0.01 to 2.5 GHz, having the low insertion loss and high isolation.

HS350

Abstract: package T6R
Contextual Info: GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from

PD5713TK

Abstract: HS350
Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5713TK WIDE BAND SPDT SWITCH DESCRIPTION The μPD5713TK is a CMOS MMIC for wide band SPDT Single Pole Double Throw switch which were developed for mobile communications, wireless communications and another general-purpose RF switching application.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

UPD5731

Abstract: HS350 12-PIN PD5731T6M uPD5731T6M
Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. This device can operate frequency from 0.01 to 2.5 GHz, having the low insertion loss and high isolation.

marking 26 spdt sot363

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2408TB 0.05 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2408TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch for 2.4 GHz wireless LAN, mobile phone and other L, S-band applications. This device operates with dual control switching voltages of 2.5 to 5.3 V. This device can operate at frequencies

PG2409T6X

Abstract: PG2409T6X-E2
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409T6X HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409T6X is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.05 to 6.0 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2413T6M SP3T SWITCH FOR Bluetooth TM AND 802.11b/g DESCRIPTION The μPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss.

PG2415T6X-E2-A

Abstract: marking 6-PIN PLASTIC TSON HS350
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The μPG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies