NEC SILICON EPITAXIAL POWER TRANSISTOR Search Results

NEC B536

Abstract: 2SD382 2SB536 NEC 2sD381 b536 2SB537 B-536 nec b 537 2SB536 b537
Contextual Info: NEC SILICON POWER TRANSISTORS HfCTR0N“ 2SB536,2SB537/2SD381,2SD382 AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING PNP/NPN SILICON EPITAXIAL TRANSISTOR DESCR IPTIO N The 2SB536, 2SB537 and 2SD381, 2SD382 are silicon epitaxial transistors intended for a wide variety of

LDB 107

Contextual Info: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

SOT-89 FJ

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR 2SB799 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB799 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

5490A

Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

2SC1449

Abstract: S10ms
Contextual Info: NEC SILICON POWER TRANSISTOR ELEC T R O N DEVICE 2SC 1449 AF POWER AMPLIFIER AND RF POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC1449 is an NPN general purpose transistor designed for use in audio and radio frequency power amplifiers.

2SA1463

Abstract: 2SC3736 MEI-1202 MF-1134
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1005 is designed fo r audio frequency power am p lifie r application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE _ _ _ _ _ _ BCX54,BCX55,BCX56 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The B C X54 to 56 are designed fo r audio frequency power am plifier application, especially in H yb rid Integrated Circuits.

ta69

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

NTC2908

Contextual Info: NEC SILICON POWER TRANSISTOR NTC2908 ELECTRON DEVICE HIGH SPEED HIGH CURRENT SWITCHING NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION Suitable fo r sw itching regulator, DC-DC converter and ultrasonic appliance applications. FEATURES PACKAGE DIMENSIONS in millimeters inches

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SB800 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE D IM ENSIONS

2SA1224

Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­

NTD409

Contextual Info: NEC SILICON DARLINGTON POWER TRANSISTOR NTD409 ELECTRON DEVICE LOW FREQUENCY AMPLIFIER AND LOW SPEED SW ITC H IN G NPN SILICON EPITAXIAL MESA DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable for hummer driver, pulse motor driver and relay driver applications.

2SB628

Abstract: 2s0608 2SD608
Contextual Info: NEC SILICON POWER TRANSISTORS ELECTRON DEVICE _ _ _ Ä Ä 2SB628/2SD608 AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SW ITCHING PN P/NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The in m illim e te rs inches fo r 2SB628/2SD 608 are PNP/NPN

D1802

Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)

2SD596A

Abstract: transistor DV3 D1788 2SB624
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)

2SB624

Abstract: 2SD596
Contextual Info: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2

700 v power transistor

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOF 2SD 1001 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SD1001 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. F E A TU R E S • World Standard M iniature Package

92-0151

Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
Contextual Info: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pream plifier application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M iniature Package

2SD780

Abstract: 7802S
Contextual Info: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe­ in m illim eters 2 .8 + 0 2

2SA1173

Abstract: MF-1134 2SC2780 MEI-1202 TEI-1202 EL1202 MARKING J1A
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S C 2780 is designed fo r audio frequency pream plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

NTD407

Contextual Info: NEC SILICON DARLINGTON POWER TRANSISTOR ELECTRON DEVICE NTD407 LOW FREQUENCY AMPLIFIER AND LOW SPEED SW ITC H IN G NPN SILICON EPITAXIAL MESA DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable fo r hum m er driver, pulse m o to r driver and relay driver applications.

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR / 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS