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    NEC UPA 63 Search Results

    NEC UPA 63 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D12320VTE20V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), TFQFP, / Visit Renesas Electronics Corporation
    D12324SVF25V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    D12373RVFQ33V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), LQFP, /Tray Visit Renesas Electronics Corporation
    D12670VFC33V Renesas Electronics Corporation High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    DF2111BVT10BV Renesas Electronics Corporation Microcontrollers for Office Equipment Applications (Non Promotion) Visit Renesas Electronics Corporation

    NEC UPA 63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC uPA 63 H

    Abstract: NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR ,uPA502T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS The pPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +O.’


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    PDF uPA502T pPA502T SC-59 pPA503T NEC uPA 63 H NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet

    SR8800SMQ1950BY

    Abstract: colpitt oscillator design lc colpitt oscillator SR8800SMQ2000BY rohde UPA cascode transistor array VCO NEC uPA 1400 sr8800 Simulation of 3 phase common mode choke R68000
    Text: California Eastern Laboratories APPLICATION NOTE AN1034 Designing VCOs and Buffers Using the UPA family of Dual Transistors Abstract This application note will review the process by which VCO Voltage Controlled Oscillator designers choose their oscillator’s topology and devices based on performance requirement, real estate constraints and DC power consumption. Using a Personal Communication System (PCS) application as a practical example, this article will demonstrate a


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    PDF AN1034 SR8800SMQ1950BY colpitt oscillator design lc colpitt oscillator SR8800SMQ2000BY rohde UPA cascode transistor array VCO NEC uPA 1400 sr8800 Simulation of 3 phase common mode choke R68000

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


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    PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    UPA101

    Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
    Text: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,


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    PDF AN-SI-1001 UPA101/102/103/104 UPA104 UPA104 UPA104B UPA101 UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 RF TRANSISTOR NPN MICRO-X

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


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    PDF AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    nec tokin oe 128

    Abstract: NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 uPC 2002 453 8pin opto p281 opto 5.5V 0.47f GC
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF X18437JJ3V0IF00 X18437JJ2V0IF 10BASE2/5/-T 10Mbps 200m5 100BASE-T 100Mbps 100BASE-TX100BASE-T4100BASE-FX 1000BASE-X 1000BASE-LX1000BASE-SX1000BASE-CX nec tokin oe 128 NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 uPC 2002 453 8pin opto p281 opto 5.5V 0.47f GC

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


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    PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    TAG 8926

    Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
    Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130


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    PDF MCIMX31 MCIMX31L MCIMX31RM IOIS16 IOIS16/WP MCIMX31L TAG 8926 Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733

    ARM1136EJ-S

    Abstract: MCIMX35 ARM1136ej IMX35RM IMX35RMAD TC58NVG4D TC58NVG4 LPG GAS SENSOR din 74324 emmc spec
    Text: An addendum for this document is available. See Document ID#: IMX35RMAD. i.MX35 MCIMX35 Multimedia Applications Processor Reference Manual Supports i.MX35 (MCIMX35) i.MX351 (MCIMX351) i.MX353 (MCIMX353) i.MX355 (MCIMX355) i.MX356 (MCIMX356) i.MX357 (MCIMX357)


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    PDF IMX35RMAD. MCIMX35) MX351 MCIMX351) MX353 MCIMX353) MX355 MCIMX355) MX356 ARM1136EJ-S MCIMX35 ARM1136ej IMX35RM IMX35RMAD TC58NVG4D TC58NVG4 LPG GAS SENSOR din 74324 emmc spec

    MCIMX51RM

    Abstract: Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129
    Text: An errata for this document is available. See Document ID#: IMX51RMAD. MCIMX51 Multimedia Applications Processor Reference Manual MCIMX51RM Rev. 1 2/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed:


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    PDF IMX51RMAD. MCIMX51 MCIMX51RM EL516 MCIMX51RM Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129

    NEC uPA 437

    Abstract: f J 6820
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA809T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage O peration, Low Phase D istortion • Low Noise NF = 1.5 dB TYP.


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    PDF uPA809T 2SC5193) NEC uPA 437 f J 6820

    k 3531 transistor

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS Units FEATURES • • • LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: • SMALL PACKAGE STYLE: in mm P ackage Outline T S 06 (Top View)


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    PDF UPA826TF NE685 UPA826TF for-27 UPA826TF-T1 24-Hour k 3531 transistor

    UPA827TF

    Abstract: k 3531 transistor
    Text: PRELIMINARY DATA SHEET UPA827TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline T S 06 (Top View) |S 2 ie |2 = 9 dB T Y P at f = 2 G Hz, V ce = 2 V, Ic = 7 m A


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    PDF UPA827TF UPA827TF-T1 24-Hour UPA827TF k 3531 transistor

    UPA831TF

    Abstract: NE856
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q1:NF = 1.4 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:NF = 1.2 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA


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    PDF UPA834TF NE681, NE856) UPA834TF NE68130 NE85630 UPA834TF-T1 831TF UPA831TF NE856

    LEM LC 500-S

    Abstract: KL SN 102 94v SCR M21C STM CL-70 scr ky 202 TFK S 417 T LX 2272 fcf - 4 94v - 0 _ 1 2ty nte tfk 914
    Text: M O S S * l5 ]ï& M O S Integrated Circuit PD17010 7 " '- f Jls • i F 4^ 7 — — >*f • h • '> > ? V =3- 7 7 ° * 7 ^ □ □ > h □ - ^ //P D 1 7 0 1 0 f i , x - i v ? J U ••J-D - — - > ? ' • 4 t'-y i- • ■> > 'y 7° C M O S v - i ÿ - p z i > h □ — -ÿT 'T o


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    PDF uPD17010 LEM LC 500-S KL SN 102 94v SCR M21C STM CL-70 scr ky 202 TFK S 417 T LX 2272 fcf - 4 94v - 0 _ 1 2ty nte tfk 914

    2T931A

    Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
    Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K


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    PDF MOKP51KOB, KTC631 TI2023 II2033 TT213 TI216 fI217 II302 XI306 n306A 2T931A KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A