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NEC Electronics Group NEL2004F02-24
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NEL2004F02 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NEL2004F02-24		NEC	NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR		Original	PDF
NEL2004F02-24		NEC	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier		Original	PDF
NEL2004F02-24-AZ		NEC	TRANS GP BJT 30V 1.5A		Original	PDF

NEL2004F02 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C 5478 transistor Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3	Original	PDF	NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 173278 LARGE SIGNAL IMPEDANCES
C 5478 transistor Abstract: transistor 5478 7807 transistor NEL2004 1N4454 1N5254 NEL2004F02-24 resistor 39 ohm diode 1n4454 Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB BASE • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) 3±0.2 2±0.2 5.85±0.2 EMITTER	Original	PDF	NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor NEL2004 1N4454 1N5254 resistor 39 ohm diode 1n4454
VO6C Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C Text: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2	Original	PDF	NEL2004F02-24 NEL2004F02-24 VO6C NEL2004 NEL2035 NEL2001 NEL2012 VO-6C
NEL2000 Abstract: NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.	Original	PDF	NEL2000 P10381EJ3V1DS00 NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W
2SK2396A Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The	Original	PDF	P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	PDF	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
NEL2004F02-24 Abstract: F 323 Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. F02 BASE 3±0.2 2±0.2 2±0.2 2 X f 3.2±0.3 2.58±0.3 EMITTER EMITTER 5.85±0.2 EMITTER EMITTER COLLECTOR 3.6±0.5 3.6±0.5 12.4±0.2	Original	PDF	NEL2004F02-24 L2004 24-Hour NEL2004F02-24 F 323
C 5478 transistor Abstract: No abstract text available Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES OUTLINE DIMENSIONS NEL2004F02-24 Units in mm HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB	OCR Scan	PDF	NEL2004F02-24 NEL2004F02-24isan th-19 24-Hour C 5478 transistor
C 5478 transistor Abstract: 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear" Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 1.5 W Class A, 7 W Class AB PACKAGE OUTLINE F02 USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB	OCR Scan	PDF	NEL2004F02-24 NEL2004F02-24 C 5478 transistor 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"
C 5478 transistor Abstract: 7807 transistor LM 1709 Text: NPN SILICON BIPOLAR NEL2004F02.24 L - BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) • HIGH LINEAR GAIN:	OCR Scan	PDF	NEL2004F02 NEL2004F02-24 the83 C 5478 transistor 7807 transistor LM 1709
NEL2001 Abstract: NEL2000 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PC N/PC S base station applications.	OCR Scan	PDF	NEL2000 NEL200101-24 NEL2004F02-24 NEL2012F02-24 NEL2035F03-24 NEL2001 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave
LDB 107 Abstract: No abstract text available Text: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.	OCR Scan	PDF	NEL2000 P10381EJ3V1DS00 LDB 107
NEM0899F01-30 Abstract: No abstract text available Text: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added	OCR Scan	PDF	NES1821B-30 NES1821P-50 NES2527B-30 NEZ3436-30E NEL200101-24 NEL2004F02-24 NEL2012F03-24 NEM0899F01-30
NEM0899F01-30 Abstract: BL 130 301 Text: VHF Silicon MOSFET for Broadcast/Base Station T Y H Ç tt. ¡m t :fittaafar • iw u y i I V»* : ■m' w h iá * NEM0899F01-301 NEM0995F01-301 new> F011 F011 460 to 860 820 to 960 Poirr P out dBm (W) Gain Efficienc (dBm) (%) 30 AB 50 100 12 30 AB 49.8 95	OCR Scan	PDF	NEM0899F01-301 NEM0995F01-301 NEL200101-24 MC-7852 MC-7856 50-860M MC-7862 MC-7866 NEM0899F01-30 BL 130 301