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    California Eastern Laboratories (CEL) NESG2046M33-A

    RF TRANS NPN 5V 18GHZ 3SMINMOLD
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    Renesas Electronics Corporation NESG204619-T1-A

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    Quest Components NESG204619-T1-A 1,759
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    NESG2046 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NESG204619 California Eastern Laboratories NPN SiGe HIGH FREQUENCY TRANSISTOR Original PDF
    NESG204619 NEC NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD Original PDF
    NESG204619-A California Eastern Laboratories NPN SiGe HIGH FREQUENCY TRANSISTOR Original PDF
    NESG204619-A NEC NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION Original PDF
    NESG204619FB NEC NPN SiGe RF Transistor for Low Noise, High-gain Amplification 3-pin Ultra Super Minimold Original PDF
    NESG204619FB-T1 NEC NPN SiGe RF Transistor for Low Noise, High-gain Amplification 3-pin Ultra Super Minimold Original PDF
    NESG204619-T1-A California Eastern Laboratories NPN SiGe HIGH FREQUENCY TRANSISTOR Original PDF
    NESG204619-T1-A NEC NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION Original PDF
    NESG2046M33 California Eastern Laboratories NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION Original PDF
    NESG2046M33 NEC NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION Original PDF
    NESG2046M33-A California Eastern Laboratories NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION Original PDF
    NESG2046M33-A NEC NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION Original PDF
    NESG2046M33FB NEC NPN SiGe RF Transistor for Low Noise, High-gain Amplification 3-pin Super Lead-less Minimold (M33, 0804 Package) Original PDF
    NESG2046M33FB-T3 NEC NPN SiGe RF Transistor for Low Noise, High-gain Amplification 3-pin Super Lead-less Minimold (M33, 0804 Package) Original PDF
    NESG2046M33-T3-A California Eastern Laboratories NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION Original PDF
    NESG2046M33-T3-A NEC NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION Original PDF

    NESG2046 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NESG2046M33

    Abstract: NESG2046M33-A NESG2046M33-T3-A
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY


    Original     		PDF NESG2046M33 NESG2046M33-A NESG2046M33-T3-A NESG2046M33 NESG2046M33-A NESG2046M33-T3-A

    2SC5800

    Abstract: NESG2046M33 NEC JAPAN IC
    Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor


    Original     		PDF PA869TD NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33 NEC JAPAN IC

    NESG2046M33

    Abstract: NESG2107M33
    Text: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor


    Original     		PDF PA880TS NESG2046M33, NESG2107M33) S21e2 NESG2046M33 NESG2107M33 NESG2046M33 NESG2107M33

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NESG204619 NESG204619-A NESG204619-T1-A PU10465EJ01V0DS

    ultra low noise RF Transistor

    Abstract: NEC JAPAN NESG204619 10T70
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NESG204619 NESG204619-T1 ultra low noise RF Transistor NEC JAPAN NESG204619 10T70

    M33 nec

    Abstract: M33 TRANSISTOR NESG2046M33 marking T7
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		PDF NESG2046M33 NESG2046M33-T3 M33 nec M33 TRANSISTOR NESG2046M33 marking T7

    2SC5800

    Abstract: NESG2046M33
    Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor


    Original     		PDF PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NESG204619 NESG204619-T1 NESG204619-A NESG204619-T1-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NESG2046M33 NESG2046M33 NESG2046M33-T3 NESG2046M33-A NESG2046M33-T3-A

    NESG204619

    Abstract: NESG204619-A NESG204619-T1-A
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG204619 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS:


    Original     		PDF NESG204619 NESG204619-A NESG204619-T1-A NESG204619 NESG204619-A NESG204619-T1-A

    M33 TRANSISTOR

    Abstract: NESG2046M33-A NESG2046M33 NESG2046M33-T3-A transistor m33
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY


    Original     		PDF NESG2046M33 NESG2046M33-A NESG2046M33-T3-A M33 TRANSISTOR NESG2046M33-A NESG2046M33 NESG2046M33-T3-A transistor m33

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: NESG204619 NESG204619-A NESG204619-T1-A 50 ZL 220
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG204619 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS:


    Original     		PDF NESG204619 NESG204619-A NESG204619-T1-A RF NPN POWER TRANSISTOR C 10-12 GHZ NESG204619 NESG204619-A NESG204619-T1-A 50 ZL 220

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    NESG204619

    Abstract: NESG204619-A NESG204619-T1-A
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF NESG204619 NESG204619-A NESG204619-T1 NESG204619-T1-A PU10465JJ02V0DS NESG204619 NESG204619-A NESG204619-T1-A

    2SC5800

    Abstract: NESG2046M33
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PA869TD NESG2046M33, 2SC5800 PU10460JJ01V0DS L044-435-1588 X044-435-1579 X044-435-1918 2SC5800 NESG2046M33

    m33 tf 130

    Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
    Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP


    Original     		PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF