NF 028 Search Results

2sk991

Abstract: 2SK9 ASGA 2sk99
Contextual Info: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f

910-240

Abstract: 2702141
Contextual Info: Single - Turret Standoffs ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rt 02893 • Tel. 401 -823-5200 • FAX 401-823-8723 • TWX 9102403454 EMC*Product "STS" Series o Plating: r° nf *14: 400u." Tin terminal, 200u" Cadmium Chromate base/eyelet

mmic n1

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

FMM5701X

Abstract: 18-28GHz
Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

24ghz

Abstract: FMM5701X
Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

FMM5701X

Abstract: EUDYNA eudyna an
Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

NF C 32-070

Contextual Info: Power and control cables ÖLFLEX Wide range use halogen-free ÖLFLEX® CLASSIC 130 H VDE certified characteristics UNITRONIC® Info ▯ VDE certified ▯ Flame test acc. to NF C 32-070 categorie C1 Industrial machinery Air conditioning installations Stage technique

10621p2l

Contextual Info: MIL-C-28840 901-028 901-028 Plug, 90°, Adapter Assembly PLUG, 90° ADAPTER ASSEMBLY MIL-C-28840/28 MIL-C-28840 HOW TO ORDER: GLENAIR P/N: 901-028 MILITARY P/N: M28840/28 3 NF C 25 G 1 1 B B BASIC PART NUMBER CLASS CODE SEE MIL-C-28840 SHELL SIZE (TABLE I)

dual-gate YB

Abstract: 3SK318 SC-82AB Hitachi DSA00336
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK319

Abstract: ADE-208-602 Hitachi DSA00395
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

995-0149

Abstract: BF014D0102J CTZ3E capacitor 100 uF BF074D0105J W3A41A221KAT1A 995-0101 BF024D0334J 100-100-NPO 995-0128
Contextual Info: AVX Polyester Film Capacitors, Voltage Suppressors, Chip Capacitors and Cap Arrays Visit AVXÕs Website at www.avxcorp.com BF Series Film Radial Leads General Characteristics Climactic Category: 55/100/56 Ñ performance class 2. Capacitance Range: CR 1 nF to 2.2 µF E12 . Tolerances On CR:

bo 139

Abstract: pc 817 2SC5545 d 434 Hitachi DSA00235
Contextual Info: 2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 Z 1st. Edition Jan. 1999 Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3

HITEC 623

Abstract: Hitachi DSA002752
Contextual Info: 2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 Z 1st. Edition Jan. 1, 1999 Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4

Hitachi DSA002714

Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition March 1, 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz)

Contextual Info: Mini-Circuits - Specification for Amplifier - HELA-10D Amplifier print this page HELA-10D Frequency MHz fL - fU Dynamic VSWR DC Power Thermal Range resistance Output Input NF IP3 CurØjc Typ. In Out Min. Typ. Max. 1 dB Min. (no dB dBm rent Volt(V. °C/W

HELA-10B

Contextual Info: Mini-Circuits - Specification for Amplifier - HELA-10B Amplifier print this page HELA-10B Frequency MHz fL - fU Dynamic VSWR DC Power Thermal Range resistance Output Input NF IP3 CurØjc Typ. In Out Min. Typ. Max. 1 dB Min. (no dB dBm rent Volt(V. °C/W

Hitachi DSA002759

Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline

Contextual Info: EMI FILTER FOR INVERTERS SERIES INTRODUCTIONS COMPONENTS PART NO. Cx1 uF Cx2(uF) Cy(nF ) 16DRT1W3A 1.0 0.68 4.7 2.2 1.0 10 * 30DRT1W3 * UL APPROVED L(mH) Lg(uH) 1.7 32 2.2 - 1. Applications: Electric equipment, UPS, machine tool, copy machine, automation equipment, robot, AC motor drive

Contextual Info: Mini-Circuits - Specification for Amplifier - HELA-10C Amplifier print this page HELA-10C Frequency MHz fL - fU Dynamic VSWR DC Power Thermal Range resistance Output Input NF IP3 CurØjc Typ. In Out Min. Typ. Max. 1 dB Min. (no dB dBm rent Volt(V. °C/W

HITEC 527

Abstract: ZO 103 zo 607 MA transistor zo 607 zo 103 ma 2SC4994 DSA003635
Contextual Info: 2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK–4 2

Contextual Info: Mini-Circuits - Specification for Amplifier - HELA-10A Amplifier print this page HELA-10A Frequency MHz fL - fU Dynamic VSWR DC Power Thermal Range resistance Output Input NF IP3 CurØjc Typ. In Out Min. Typ. Max. 1 dB Min. (no dB dBm rent Volt(V. °C/W

Contextual Info: TGA2614-SM S-Band High Gain LNA Applications • Commercial and Military Radar • Satellite Communications QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 – 3.8 GHz NF: 1.2 dB SS Gain: 17 dB OTOI: 33 dBm P1db: 19 dBm Psat: 20 dBm

lg r40

Abstract: 21TDT1W4 30DRT1W3 50TDS1W1
Contextual Info: EMI FILTER FOR INVERTERS SERIES INTRODUCTIONS COMPONENTS PART NO. Cx1 uF Cx2 (uF) Cy (nF) 16DRT1W3A 1.0 0.68 4.7 *30DRT1W3 2.2 1.0 10 *UL APPROVED L (mH) 1.7 2.2 Lg (uH) 32 - 1. Applications: Electric equipment, UPS, machine tool, copy machine, automation equipment, robot, AC motor drive