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    NF 817 Search Results

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    NF 817 Price and Stock

    Nexperia BC817DPN,115

    Bipolar Transistors - BJT BC817DPN/SOT457/SC-74
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BC817DPN,115 61,678
    • 1 $0.25
    • 10 $0.164
    • 100 $0.089
    • 1000 $0.071
    • 10000 $0.053
    		Buy Now

    Nexperia BC817DPNF

    Bipolar Transistors - BJT BC817DPN/SOT457/SC-74
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BC817DPNF 9,506
    • 1 $0.29
    • 10 $0.196
    • 100 $0.099
    • 1000 $0.081
    • 10000 $0.051
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    Glenair Inc 801-007-16NF21-130PA

    Circular MIL Spec Connector 11+ start 5 wks AOC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 801-007-16NF21-130PA 1
    • 1 $2574.16
    • 10 $2574.16
    • 100 $2574.16
    • 1000 $2574.16
    • 10000 $2574.16
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    Glenair Inc 801-007-26NF13-200PA

    Circular MIL Spec Connector 11+ start 5 wks AOC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 801-007-26NF13-200PA
    • 1 $823.43
    • 10 $452.56
    • 100 $452.56
    • 1000 $452.56
    • 10000 $452.56
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    Glenair Inc 801-007-16NF17-241PA

    Circular MIL Spec Connector 26+ start 5 wks AOC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 801-007-16NF17-241PA
    • 1 $1399.44
    • 10 $769.13
    • 100 $769.13
    • 1000 $769.13
    • 10000 $769.13
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    NF 817 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NF 817

    Abstract: 12v ah battery 12V50AH rechargeable battery DOD 76116
    Text: PRODUCT SPECIFICATIONS SHEET M ODEL NUMBER DIMENSIONS G H12500 22 22- NF 12V50AH The GH12500 is a general purpose battery with a standard rate performance and a float life of 3 - 5 years. As with all Prism batteries, all are rechargeable, highly efficient, maintenance free, leak proof,


    Original     		PDF H12500 12V50AH GH12500 NF 817 12v ah battery 12V50AH rechargeable battery DOD 76116

    952 16 418

    Abstract: MODELS 248, 249 ZPUL-21 ZPUL-30P NF 723
    Text: PULSE AMPLIFIERS Coaxial INVERTING & NON-INVERTING up to 200 mW, 2.5 KHz to 700 MHz ZPUL Up to 200 mW FREQ. MHz GAIN (dB) MAXIMUM RISE/FALL PULSE POLARITY POWER (dBm) WIDTH* TIME DYNAMIC RANGE VSWR Typ. NF* Intercept dB 3rd order Typ. Typ. Volt Current


    Original     		PDF ZPUL-30P ZPUL-21 952 16 418 MODELS 248, 249 ZPUL-21 ZPUL-30P NF 723

    full radius profile

    Abstract: Direct Coupling - Full Radius Profile series 443
    Text: 443 443-009 Submersible EMI/RFI Cable Sealing Backshell Band-in-a-Can with Strain-Relief Direct Coupling - Full Radius Profile 443 F N 009 NF 16 12 H K P CONNECTOR DESIGNATORS A-F-H-L-S Polysulfide Omit for none Connector Designator B = Band K = Precoiled Band


    Original     		PDF

    Glenair 447

    Abstract: No abstract text available
    Text: 447 447-425 EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief Rotatable Coupling - Full Radius Profile 447 F N 425 NF 16 12 K P CONNECTOR DESIGNATORS A-F-H-L-S ROTATABLE COUPLING Product Series Polysulfide Omit for none Connector Designator


    Original     		PDF

    20656

    Abstract: No abstract text available
    Text: 443 443-009 Submersible EMI/RFI Cable Sealing Backshell Band-in-a-Can with Strain-Relief Direct Coupling - Full Radius Profile 443 F N 009 NF 16 12 H K P CONNECTOR DESIGNATORS A-F-H-L-S Polysulfide Omit for none Connector Designator B = Band K = Precoiled Band


    Original     		PDF

    full radius profile

    Abstract: series 447
    Text: 447 447-425 EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief Rotatable Coupling - Full Radius Profile 447 F N 425 NF 16 12 K P CONNECTOR DESIGNATORS A-F-H-L-S ROTATABLE COUPLING Product Series Polysulfide Omit for none Connector Designator


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP620F Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor 3 • Based on Infineon's reliable high volume 2 4 1 Silicon Germanium technology • Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NF min = 1.3 dB at 6 GHz


    Original     		PDF BFP620F AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD


    Original     		PDF BGA420 25-Technologie EHA07385

    INFINEON marking BGA

    Abstract: BGA420 t501
    Text: BGA420 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz V D = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.3 dB at 1.8 GHz VD


    Original     		PDF BGA420 25-Technologie EHA07385 OT343 INFINEON marking BGA BGA420 t501

    Untitled

    Abstract: No abstract text available
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD


    Original     		PDF BGA420 25-Technologie EHA07385 OT343

    TRANSISTOR D434

    Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm


    Original     		PDF NE674 NE67400 NE67483B NE67483B] NE67400] TRANSISTOR D434 d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313

    C10535E

    Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION


    Original     		PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] C10535E NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B

    Tektronix 2212

    Abstract: AN231 schematic diagram bluetooth headset TI AN175 BGA728L7 C166 Mifare* capacitor inductor sma M7 diode schematic diagram of FM radio
    Text: B GA 7 2 8 L 7 Bro a d b a n d L o w No i s e A m p l i fi e r f o r FM R a d i o Ap p l i c a ti o n s u s i n g B GA 7 2 8 L 7 In c l u d i n g a c o n f i g u r a ti o n fo r mi n i mu m NF a n d o n e fo r b e s t i n p u t ma tc h i n g i n a 5 0 Oh m s ys te m


    Original     		PDF AN231, BGA728L7 BGA728L7 AN231 Tektronix 2212 AN231 schematic diagram bluetooth headset TI AN175 C166 Mifare* capacitor inductor sma M7 diode schematic diagram of FM radio

    XE166

    Abstract: XC2000 xc2000 reference manual AP24026 reference design using infineon infineon qfp144 QFP-100 AP16116
    Text: Application Note, V1.1, October 2007 AP16116 XC2000 & XE166 Families Design Guidelines for XC2000 & XE166 Microcontroller Board Layout Microcontrollers Edition 2007-10 Published by Infineon Technologies AG 81726 Münich, Germany 2007 Infineon Technologies AG


    Original     		PDF AP16116 XC2000 XE166 XE166 QFP-144) QFP-100) XC2000 xc2000 reference manual AP24026 reference design using infineon infineon qfp144 QFP-100 AP16116

    55n60

    Abstract: transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948
    Text: Transistoren Transistors NF-Transistoren Transistoren für allgemeine und Schaltanwendungen AF-Transistors General Purpose and Switching Transistors Type N = NPN P = PNP Maximum Ratings Chara cteristics [Tk - 2>5°C J'CEO V mA ^CBQ Ptot / t mW MHz nA at VQB0 hfE


    OCR Scan     		PDF OT-23 BC807W OT-323 BC817W OT-89 55n60 transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948

    q406 transistor

    Abstract: nf 820 transistor q406 q406 transistor data
    Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q


    OCR Scan     		PDF Q62702-S638 Q62702-S637 E6288 E6296 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 q406 transistor nf 820 transistor q406 q406 transistor data

    NEC 3536

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •


    OCR Scan     		PDF NE76118 NE76118 NE76118-T1 NE76118-T2 NEC 3536

    Untitled

    Abstract: No abstract text available
    Text: 2SC5138 Silicon NPN Epitaxial HITACHI ADE-208-225 1st. Edition Application V H F / UHF wide band am plifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 M H z Outline SMPAK


    OCR Scan     		PDF 2SC5138 ADE-208-225

    063 793

    Abstract: transistor v63
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain


    OCR Scan     		PDF NE34018 NE34018 WS60-00-1 IR30-00-3 063 793 transistor v63

    NEC K 2500

    Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz


    OCR Scan     		PDF NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905

    817 CN

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz


    OCR Scan     		PDF NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    NEC D 809 F

    Abstract: NEC D 809 71383B NEC D 809 k
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm


    OCR Scan     		PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k

    HT 1000-4 power amplifier

    Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
    Text: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22|xF 4 k il 1 nF 1 0 0 jlF * V OUT V|N C - Q1 -O h anyCAP LDO TOPOLOGY - | - C COMP N O N IN V E R T IN G W ID E B A N D


    OCR Scan     		PDF ADP3050-5 ADP3603/4/5 ADMC300 ADMC330 ADMC331 HT 1000-4 power amplifier mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v