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    NF 842 Price and Stock

    Glenair Inc 805-004-22NF18-55SA

    Circular MIL Spec Connector MIGHTY MOUSE CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 805-004-22NF18-55SA 7
    • 1 $2012.29
    • 10 $1548.33
    • 100 $1548.33
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    Glenair Inc 805-004-22NF18-55SB

    Circular MIL Spec Connector MIGHTY MOUSE CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 805-004-22NF18-55SB 6
    • 1 $2012.29
    • 10 $1548.33
    • 100 $1548.33
    • 1000 $1548.33
    • 10000 $1548.33
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    Glenair Inc 804-020-07NF9-4EA-372C

    Circular MIL Spec Connector 26+ start 5 wks AOC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 804-020-07NF9-4EA-372C
    • 1 $720.61
    • 10 $396.04
    • 100 $303.31
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    Lattice Semiconductor Corporation PN-F100/LX64

    Sockets & Adapters 100 Pin fpBGA Soct Adptr ispGDX2-64 P-F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PN-F100/LX64
    • 1 $788.75
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    Lattice Semiconductor Corporation PN-F208/LX128

    Sockets & Adapters Socket Adapter
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    Mouser Electronics PN-F208/LX128
    • 1 $973.75
    • 10 $973.75
    • 100 $973.75
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    NF 842 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8439

    Abstract: BPV10NF
    Text: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and


    Original     		PDF BPV10NF 950nm) 870nm) 78mm2 D-74025 8439

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - ZQL-900MLN Amplifier print this page ZQL-900MLN Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 824-849 26 ±0.50 +24.50


    Original     		PDF ZQL-900MLN

    BPV10NF

    Abstract: No abstract text available
    Text: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and


    Original     		PDF BPV10NF 950nm) 870nm) 78mm2 D-74025

    CW68

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - ZQL-900MLNW Amplifier print this page ZQL-900MLNW Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 800-900 22 ±2.20 +23.00


    Original     		PDF ZQL-900MLNW CW68

    BPV22NF

    Abstract: No abstract text available
    Text: TELEFUNKEN Semiconductors BPV 22 NF Silicon PIN Photodiode Description BPV22NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on


    Original     		PDF BPV22NF D-74025

    BPV23NF

    Abstract: No abstract text available
    Text: TELEFUNKEN Semiconductors BPV 23 NF Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on


    Original     		PDF BPV23NF D-74025

    BPV23NF

    Abstract: 950nm
    Text: TELEFUNKEN Semiconductors BPV 23 NF Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs


    Original     		PDF BPV23NF D-74025 950nm

    BPV22NF

    Abstract: No abstract text available
    Text: TELEFUNKEN Semiconductors BPV 22 NF Silicon PIN Photodiode Description BPV22NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs


    Original     		PDF BPV22NF D-74025

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB


    Original     		PDF NE321000 NE321000 2e-12 08e-12 21e-12 025e-12 24-Hour

    balun transformer 75 ohm 1000MHz

    Abstract: 50W linear power amplifier 4000MHz ADTL2-18 1ghz amp n50 schematic diagram vga 15-pin IC 2032A ETC1-1-13 cd542
    Text: LTC6430-15 High Linearity Differential RF/IF Amplifier/ADC Driver Description Features 50.0dBm OIP3 at 240MHz into a 100Ω Diff Load n NF = 3.0dB at 240MHz n 20MHz to 2000MHz Bandwidth n 15.2dB Gain n A-Grade 100% OIP3 Tested at 240MHz n 1.0nV/√Hz Total Input Noise


    Original     		PDF 240MHz 20MHz 2000MHz 800mW 24-Lead LTC6430-15 1000MHz 16-Bit balun transformer 75 ohm 1000MHz 50W linear power amplifier 4000MHz ADTL2-18 1ghz amp n50 schematic diagram vga 15-pin IC 2032A ETC1-1-13 cd542

    NF 841

    Abstract: NF 831 035910
    Text: 821 - 851 MHz Wireless Amplifier QBS-359 Parameters Guaranteed Guaranteed 25°C • 821-851 MHz frequency band • NF typically < 1dB overtemp • High 3rd OIP typically 40dBm overtemp +5 to +55°C 821 - 851 44.0 ± 0.5 +0.5/-0.5 1.0 1.0 55 55 1.5:1 1.5:1


    Original     		PDF QBS-359 40dBm E52-19437) A91-0359 NF 841 NF 831 035910

    02S11

    Abstract: max 7176
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB


    Original     		PDF NE321000 NE321000 24-Hour 02S11 max 7176

    Untitled

    Abstract: No abstract text available
    Text: plerowTM APM0843-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 35.06 dB @ 840 MHz = 34.94 dB @ 845 MHz · NF of 6.5 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er amplifier mini-module for such application band in


    Original     		PDF APM0843-P29 40x40mm 10x10mm) APM0950

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


    Original     		PDF UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236

    LB 1639

    Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		PDF UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		PDF UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application

    MOS marking 843

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4007F TV TUNER VHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account o f this Dlevice b u ilt in Bias Circuit, Cut d o w n num ber o f articles. NF = 1.3dB Typ.


    OCR Scan     		PDF TA4007F MOS marking 843

    2N6617

    Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
    Text: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions


    OCR Scan     		PDF 2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. 2N6617 HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101

    TRANSISTOR nf 842

    Abstract: D 843 Transistor transistor su 312
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:


    OCR Scan     		PDF NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312

    NEC 3536

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •


    OCR Scan     		PDF NE76118 NE76118 NE76118-T1 NE76118-T2 NEC 3536

    Untitled

    Abstract: No abstract text available
    Text: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current


    OCR Scan     		PDF 08N05L P-T0252 Q67040-S4134 P-T0251 SPD08N05L SPU08N05L Q67040-S4182-A2 S35bQ5 Q133777 SQT-89

    transistor M 839

    Abstract: Y 521 R 937
    Text: 2SC5218 Silicon NPN Epitaxial HITACHI ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fx = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK • 2


    OCR Scan     		PDF 2SC5218 ADE-208-279 transistor M 839 Y 521 R 937

    TRANSISTOR nf 842

    Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz


    OCR Scan     		PDF NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534