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    NF C4 NPN Search Results

    NF C4 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NF C4 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor W03

    Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
    Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


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    PDF AN1465 START540 23dBm, OT-343 SC-70) 30mils Transistor W03 AN1465 ultra low noise NPN transistor ultra linearity rf transistor

    JOHANSON 2951

    Abstract: Stackpole ferrite 2N5943 equivalent wound trifilar 10 turns l4 transistor CM5943 trifilar 2N5943 TRANSISTOR NPN c4 nf
    Text: CM5943 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CM5943 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching applications. This device is a replacement for the


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    PDF CM5943 CM5943 2N5943. JOHANSON 2951 Stackpole ferrite 2N5943 equivalent wound trifilar 10 turns l4 transistor trifilar 2N5943 TRANSISTOR NPN c4 nf

    11Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


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    PDF MRF6404 DCS1800 PCS1900/Cellular MRF6404 11Z4

    MRF587

    Abstract: CT050
    Text: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.


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    PDF MRF587/D MRF587 MRF587 CT050

    2SC4402

    Abstract: 2SC4365 ITR06718 ITR06719 ITR06720 ITR06721 ITR06722 ITR06723 ITR06724 2SC4402-2
    Text: 注文コード No. N 2 7 5 5 2SC4402 No. N 2 7 5 5 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4402 VHF / UHF 周波数混合 , 局部発振 , 低電圧用 用途 ・VHF / UHF, MIX / OSC, 低電圧高周波増幅用。


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    PDF 2SC4402 S21e2 2SC440 --j10 --j250 --j200 --j150 --j100 --j25 2SC4402 2SC4365 ITR06718 ITR06719 ITR06720 ITR06721 ITR06722 ITR06723 ITR06724 2SC4402-2

    2SC4364

    Abstract: 2SC4401 ITR06706 ITR06707 ITR06708 ITR06709 ITR06710 ITR06711 ITR06712 2SC4401-2
    Text: 注文コード No. N 2 7 5 4 2SC4401 No. N 2 7 5 4 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4401 VHF / UHF 周波数混合 , 局部発振 , 低電圧用 用途 ・VHF / UHF, MIX / OSC, 低電圧高周波増幅用。


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    PDF 2SC4401 S21e2 2SC4401 --j10 --j250 --j200 --j150 --j50 ITR06714 2SC4364 ITR06706 ITR06707 ITR06708 ITR06709 ITR06710 ITR06711 ITR06712 2SC4401-2

    transistor A144

    Abstract: a144 transistor
    Text: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.


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    PDF MRF587/D MRF587 Collecto51 transistor A144 a144 transistor

    2222A

    Abstract: AT-33225 AT-33225-BLK AT-33225-TR1 IC pt 2399 CIRCUIT DIAGRAM t1c8 3316 TRANSISTOR
    Text: 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ.


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    PDF AT-33225 OT-223 AT-33225 5965-5910E 2222A AT-33225-BLK AT-33225-TR1 IC pt 2399 CIRCUIT DIAGRAM t1c8 3316 TRANSISTOR

    AT-33225

    Abstract: AT-33225-TR1 transistor 2222a MSOP-3
    Text: 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ.


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    PDF AT-33225 OT-223 AT-33225 AT-33225-TR1 transistor 2222a MSOP-3

    CBC 184 transistor

    Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1
    Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


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    PDF AT-31625 OT-223 AT-31625 5965-5911E CBC 184 transistor CBC 184 c transistor transistor 2222a data sheet AT-31625-BLK AT-31625-TR1

    CBC 184 transistor

    Abstract: TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625 AT-31625-TR1 transistor 2222a 96t1
    Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


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    PDF AT-31625 OT-223 AT-31625 CBC 184 transistor TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625-TR1 transistor 2222a 96t1

    J1 3007-1

    Abstract: IC 4049 F J1 3007-2 J1 3007-2 hfe 4049 ic c 1891 ITR06659 IC 2822 ITR06656 ITR06658
    Text: 注文コード No. N 3 0 0 7 2SC4365 No. N 3 0 0 7 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4365 特長 VHF. UHF / MIX. OSC. 低電圧高周波増幅用 ・低電圧動作:fT=3.0GHz typ(VCE=3V) 。 :MAG=12dB typ(VCE=3V, IC=10mA)。


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    PDF 2SC4365 S21e2 2018B J1 3007-1 IC 4049 F J1 3007-2 J1 3007-2 hfe 4049 ic c 1891 ITR06659 IC 2822 ITR06656 ITR06658

    2SC4270

    Abstract: 2SC4407 ITR06773 ITR06774 ITR06775 ITR06776 ITR06777 ITR06778 ITR06779 j200
    Text: 注文コード No. N 2 7 6 0 2SC4407 No. N 2 7 6 0 30600 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4407 VHF / UHF 周波数混合 局部発振用 用途 ・VHF / UHF, MIXER, 周波数変換 , 局部発振用。 特長 ・しゃ断周波数が高い:fT=3.0GHz typ。


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    PDF 2SC4407 2SC4407 --j10 --j250 --j200 --j150 --j100 --j25 --j50 2SC4270 ITR06773 ITR06774 ITR06775 ITR06776 ITR06777 ITR06778 ITR06779 j200

    MRF587

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.


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    PDF MRF587/D MRF587 MRF587/D* MRF587

    ic 4570

    Abstract: 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ITR06649 ITR06650 ITR06651
    Text: 注文コード No. N 3 0 0 8 2SC4364 No. N 3 0 0 8 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4364 VHF. UHF / MIX. OSC. 低電圧高周波増幅用 特長 ・低電圧動作:fT=3.0GHz typ(VCE=3V) 。 :MAG=11dB typ(VCE=3V, IC=3mA)


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    PDF 2SC4364 S21e2 ic 4570 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ITR06649 ITR06650 ITR06651

    TRANSISTOR A331

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


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    PDF MRF6404/D MRF6404 DCS1800 PCS1900/Cellular MRF6404 MRF6404/D TRANSISTOR A331

    TRANSISTOR A331

    Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


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    PDF MRF6404/D MRF6404 MRF6404K MRF6404 DCS1800 PCS1900/Cellular MRF6404/D* TRANSISTOR A331 transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    capacitor 104 Z5

    Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


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    PDF MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular capacitor 104 Z5 resistor A331 TRANSISTOR A331 A153 A331 motorola 572 transistor 150 watts power amplifier layout ATC 100A

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2754 NPN Epitaxial Planar Silicon Transistor 2SC4401 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions • VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. unit:mm 2059B [2SC4401] · Low-voltage operation


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    PDF ENN2754 2SC4401 2059B 2SC4401] 2SC4401applied

    2SC3776

    Abstract: ITR05953 ITR05954 ITR05955 ITR05956 ITR05957 ITR05958 ITR05959 ITR05960
    Text: 注文コード No. N 1 9 4 9 B 2SC3776 No. N 1 9 4 9 B 30600 * 半導体ニューズ No.1949(TR データブック No.1949A)とさしかえてください。 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC3776 UHF, 発振 , 混合 ,


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    PDF 2SC3776 1949TR --j250 --j200 --j150 --j100 --j25 --j50 2SC3776 ITR05953 ITR05954 ITR05955 ITR05956 ITR05957 ITR05958 ITR05959 ITR05960

    2SC3772

    Abstract: 2SC4403 ITR06730 ITR06731 ITR06732 ITR06733 ITR06734 ITR06735 ITR06736
    Text: 注文コード No. N 2 7 5 6 2SC4403 No. N 2 7 5 6 30600 2SC4403 NPN エピタキシァルプレーナ形シリコントランジスタ VHF / UHF 局部発振用 用途 ・VHF / UHF, OSC 用。 特長 ・しゃ断周波数が高い:fT=3.0GHz typ。 ・電力利得が大きい


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    PDF 2SC4403 S21e2 2SC4403 --j100 --j25 --j50 ITR06737 200MHz ITR06738 2SC3772 ITR06730 ITR06731 ITR06732 ITR06733 ITR06734 ITR06735 ITR06736

    1951A

    Abstract: 2SC3778 ITR05975 ITR05976 ITR05977 ITR05978 ITR05979 ITR05980 ITR05981 ITR05982
    Text: 注文コード No. N 1 9 5 1 B 2SC3778 No. N 1 9 5 1 B 30600 * 半導体ニューズ No.1951(TR データブック No.1951A)とさしかえてください。 2SC3778 NPN エピタキシァルプレーナ形シリコントランジスタ UHF, 低雑音広帯域増幅用


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    PDF 2SC3778 1951TR 2004B --j250 --j200 --j150 --j10 --j100 1951A 2SC3778 ITR05975 ITR05976 ITR05977 ITR05978 ITR05979 ITR05980 ITR05981 ITR05982

    ic ma 8910

    Abstract: 2SC4319
    Text: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, |S2iç|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF 2SC4319 S21el2 Coll53 ic ma 8910 2SC4319

    capacitor ase 104

    Abstract: Z808 w188 trimm resistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 MRF6404K NPN S ilicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.


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    PDF MRF6404 DCS1800 1900/Cellular MRF6404K Collector-E100A MRF6404K capacitor ase 104 Z808 w188 trimm resistor