NF C4 NPN Search Results

ic ma 8910

Abstract: 2SC4319
Contextual Info: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, |S2iç|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Transistor W03

Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
Contextual Info: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high

JOHANSON 2951

Abstract: Stackpole ferrite 2N5943 equivalent wound trifilar 10 turns l4 transistor CM5943 trifilar 2N5943 TRANSISTOR NPN c4 nf
Contextual Info: CM5943 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CM5943 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching applications. This device is a replacement for the

11Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

MRF587

Abstract: CT050
Contextual Info: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

capacitor ase 104

Abstract: Z808 w188 trimm resistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 MRF6404K NPN S ilicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.

2SC4402

Abstract: 2SC4365 ITR06718 ITR06719 ITR06720 ITR06721 ITR06722 ITR06723 ITR06724 2SC4402-2
Contextual Info: 注文コード No. N 2 7 5 5 2SC4402 No. N 2 7 5 5 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4402 VHF / UHF 周波数混合 , 局部発振 , 低電圧用 用途 ・VHF / UHF, MIX / OSC, 低電圧高周波増幅用。

2SC4364

Abstract: 2SC4401 ITR06706 ITR06707 ITR06708 ITR06709 ITR06710 ITR06711 ITR06712 2SC4401-2
Contextual Info: 注文コード No. N 2 7 5 4 2SC4401 No. N 2 7 5 4 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4401 VHF / UHF 周波数混合 , 局部発振 , 低電圧用 用途 ・VHF / UHF, MIX / OSC, 低電圧高周波増幅用。

transistor A144

Abstract: a144 transistor
Contextual Info: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

2222A

Abstract: AT-33225 AT-33225-BLK AT-33225-TR1 IC pt 2399 CIRCUIT DIAGRAM t1c8 3316 TRANSISTOR
Contextual Info: 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ.

AT-33225

Abstract: AT-33225-TR1 transistor 2222a MSOP-3
Contextual Info: 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ.

CBC 184 transistor

Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1
Contextual Info: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

CBC 184 transistor

Abstract: TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625 AT-31625-TR1 transistor 2222a 96t1
Contextual Info: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

J1 3007-1

Abstract: IC 4049 F J1 3007-2 J1 3007-2 hfe 4049 ic c 1891 ITR06659 IC 2822 ITR06656 ITR06658
Contextual Info: 注文コード No. N 3 0 0 7 2SC4365 No. N 3 0 0 7 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4365 特長 VHF. UHF / MIX. OSC. 低電圧高周波増幅用 ・低電圧動作：fT=3.0GHz typ（VCE=3V） 。 ：MAG=12dB typ（VCE=3V, IC=10mA）。

MRF587

Contextual Info: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

MRF587

Abstract: HP8542 mrf587d
Contextual Info: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

ic 4570

Abstract: 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ITR06649 ITR06650 ITR06651
Contextual Info: 注文コード No. N 3 0 0 8 2SC4364 No. N 3 0 0 8 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4364 VHF. UHF / MIX. OSC. 低電圧高周波増幅用 特長 ・低電圧動作：fT=3.0GHz typ（VCE=3V） 。 ：MAG=11dB typ（VCE=3V, IC=3mA）

TRANSISTOR A331

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

TRANSISTOR A331

Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

capacitor 104 Z5

Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

Contextual Info: Ordering number:ENN2754 NPN Epitaxial Planar Silicon Transistor 2SC4401 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions • VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. unit:mm 2059B [2SC4401] · Low-voltage operation

2SC3776

Abstract: ITR05953 ITR05954 ITR05955 ITR05956 ITR05957 ITR05958 ITR05959 ITR05960
Contextual Info: 注文コード No. N 1 9 4 9 B 2SC3776 No. N 1 9 4 9 B 30600 * 半導体ニューズ No.1949（TR データブック No.1949A）とさしかえてください。 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC3776 UHF, 発振 , 混合 ,

2SC3772

Abstract: 2SC4403 ITR06730 ITR06731 ITR06732 ITR06733 ITR06734 ITR06735 ITR06736
Contextual Info: 注文コード No. N 2 7 5 6 2SC4403 No. N 2 7 5 6 30600 2SC4403 NPN エピタキシァルプレーナ形シリコントランジスタ VHF / UHF 局部発振用 用途 ・VHF / UHF, OSC 用。 特長 ・しゃ断周波数が高い：fT=3.0GHz typ。 ・電力利得が大きい

1951A

Abstract: 2SC3778 ITR05975 ITR05976 ITR05977 ITR05978 ITR05979 ITR05980 ITR05981 ITR05982
Contextual Info: 注文コード No. N 1 9 5 1 B 2SC3778 No. N 1 9 5 1 B 30600 * 半導体ニューズ No.1951（TR データブック No.1951A）とさしかえてください。 2SC3778 NPN エピタキシァルプレーナ形シリコントランジスタ UHF, 低雑音広帯域増幅用