MRF587
Abstract: HP8542 mrf587d
Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587
MRF587/D*
MRF587
HP8542
mrf587d
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transistor A144
Abstract: a144 transistor
Text: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587/D
MRF587
Collecto51
transistor A144
a144 transistor
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MRF587
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587
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MRF587
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MRF587
Abstract: CT050
Text: Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587
MRF587
CT050
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8542A
Abstract: MIL-SID-810
Text: M/A-COM’s Control Components Division has been a leading manufacturer of microwave components for nearly three decades. Our commitment to quality is evident in every product and service we provide. Our engineering staff enjoys worldwide recognition as leaders in
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MA49156
Abstract: Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron
Text: MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO WAVEGUIDE, COAXIAL, MICROSTRIP OR STRIPLINE TRANSMISSION
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MA49000
MA49139
MA49110
MA49156
Gunn Diode MA49156
x-band gunn diode
MA49508
Gunn Diode
x band gunn diode
Gunn Diode 72 GHz
gunn diode x band radar
gunn diodes
klystron
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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HP8542
Abstract: MRF587
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon H igh-Frequency Transistor MRF587 . . . designed for use in hlgh-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. •
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MRF587
MRF587
CT050
HP8542
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HP-8542A
Abstract: MFE209 dual-gate HP8542A
Text: MOTOROLA SC XSTRS/R F 12E D | b3b?254 N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR 00 öb 73 4 T I MFE209 . . . depletion mode dual gate transfer designed and characterized for UHF communications applications. • Package —
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J-101)
4-t34
HP-8542A
MFE209
dual-gate
HP8542A
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MRF580
Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
Text: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.
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MRF580
MRF581
MRFC581
MRF580A,
MRF581A,
MRFC581A
ic tms 1000
MRF580A
A581
2771 17t
Motorola 581
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MRF581
Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz
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MRF581
MRF581A
VK-200,
56-590-65/3B
MRF581A
IS211
MRF581M
f5b FERRITE
f5b FERRITE bead
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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Gunn Diode MA49156
Abstract: MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit MA49000 police radar detector x-band varactor diode MA49159
Text: M/A-COM SEMICONDUCTOR HE D I 5b4E514 DOOlim 4 I T-ÖJ-II MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO
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5b4E514
MA49000
SbM2S14
DGD1424
T-07-11
Gunn Diode MA49156
MA49156
24 GHz Microwave Doppler Radar Speed Sensor
MA49172
MA49508
Gunn Diode at power supply circuit
police radar detector
x-band varactor diode
MA49159
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chw marking sot23
Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu
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ATIC 59 C1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF587 . . . designed for use in high—gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
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MRF587/D
MRF587
ATIC 59 C1
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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MRF586
Abstract: F587 033 motorola MRF587
Text: MOTOROLA SEMICONDUCTOR MRF586 MRF587 TECHNICAL DATA The RF Line N P N S ILIC O N H IG H FR E Q U E N C Y T R A N S IS T O R S . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers Ideal for use in CATV, MATV, and instrumen
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MRF586
MRF587
T1111
F587
033 motorola
MRF587
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF587 The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MÄTV, and instrumentation applications. •
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MRF587
CT050
45004B
MRF587
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HP8542
Abstract: HP11590B transistor nf5 F581
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz
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F5812
MRF581
MRF5812
HP8542
HP11590B
transistor nf5
F581
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