NGTB25N Search Results

NGTB25N Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NGTB25N120FL2WAG		ON Semiconductor	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT FIELD STOP 1.2KV TO247-4	Original	PDF	157.3KB
NGTB25N120FL2WG		ON Semiconductor	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 25A TO247-3	Original	PDF	148.26KB
NGTB25N120FL3WG		ON Semiconductor	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 100A TO247	Original	PDF	159.24KB
NGTB25N120FLWG		On Semiconductor	NGTB25N120 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	184.91KB	10
NGTB25N120IHLWG		On Semiconductor	NGTB25 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	171.84KB	9
NGTB25N120LWG		On Semiconductor	NGTB25 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	175.68KB	9
NGTB25N120SWG		ON Semiconductor	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 25A 1200V TO-247	Original	PDF	86.6KB

NGTB25N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120IHLWG NGTB25N120IHLW/D	PDF
25N120L Abstract: NGTB25N Contextual Info: NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120LWG NGTB25N120L/D 25N120L NGTB25N	PDF
MJ1000 Contextual Info: NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120LWG NGTB25N120L/D MJ1000	PDF
25N120FL Abstract: NGTB25N120FLWG Contextual Info: NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS	Original	NGTB25N120FLWG NGTB25N120FLW/D 25N120FL	PDF
25N120L Abstract: 25N120 NGTB25N120LWG Contextual Info: NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is	Original	NGTB25N120LWG NGTB25N120L/D 25N120L 25N120	PDF
25N120IHL Abstract: NGTB25N120IHLWG NGTB25N120IHL 067147 Contextual Info: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120IHLWG NGTB25N120IHLW/D 25N120IHL NGTB25N120IHL 067147	PDF
25N120FL Contextual Info: NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	NGTB25N120FL2WG NGTB25N120FL2W/D 25N120FL	PDF
25N120IHL Abstract: NGTB25N 3842IC Contextual Info: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120IHLWG NGTB25N120IHLW/D 25N120IHL NGTB25N 3842IC	PDF
Contextual Info: NGTG25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	NGTG25N120FL2WG NGTG25N120FL2W/D	PDF