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    Rochester Electronics LLC NGTG30N60FLWG

    IGBT TRENCH FS 600V 60A TO-247-3
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    onsemi NGTG30N60FLWG

    IGBT TRENCH FS 600V 60A TO-247-3
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    NGTG30N60FLWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    NGTG30N60FLWG
    		On Semiconductor NGTG30N60 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF 171.19KB 9

    NGTG30N60FLWG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NGTG30N60FLWG

    Abstract: G30N60FL G30N60F
    Contextual Info: NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTG30N60FLWG 100able NGTG30N60FLW/D G30N60FL G30N60F PDF

    G30N60FL

    Contextual Info: NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTG30N60FLWG 100able NGTG30N60FLW/D G30N60FL PDF

    G30N60FL

    Contextual Info: NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTG30N60FLWG NGTG30N60FLW/D G30N60FL PDF