NI880XS Search Results

NI880XS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C5750X7S2A106MT Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz	Original	MRF8S18210WHS MRF8S18210WHSR3 MRF8S18210WGHSR3 from1805 MRF8S18210WHSR3 C5750X7S2A106MT	PDF
MOSFET J162 Abstract: CW12010T0050G Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to	Original	AFT26H160--4S4 AFT26H160-4S4R3 MOSFET J162 CW12010T0050G	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26H160--4S4 AFT26H160-4S4R3	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S240--12S AFT21S240-12SR3	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original		PDF
Product Selector Guide Abstract: NI-400S-2S Contextual Info: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high	Original	MMRF2004NBR1ï MMRF2006NT1ï 1230S--4L2L NI--780GS--4L NI--880XGS--2L NI--1230H--4S NI--1230S--4S4S OM--780--2L OM--780G--2L OM--780--4L Product Selector Guide NI-400S-2S	PDF
ATC100B1R8BT500XT Abstract: c5750x7s2a106mt J584 ATC100B3R9BT500XT J406 NI880xs NI-880XS-2 J426 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors MRF8S18210WHSR3 MRF8S18210WGHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz	Original	MRF8S18210WHS from1805 MRF8S18210WHSR3 MRF8S18210WGHSR3 MRF8S18210WHS ATC100B1R8BT500XT c5750x7s2a106mt J584 ATC100B3R9BT500XT J406 NI880xs NI-880XS-2 J426	PDF