NLAS4717FCT1 Search Results
NLAS4717FCT1 Price and Stock
Rochester Electronics LLC NLAS4717FCT1GIC SW SPDTX2 3.5OHM 10MICROBUMP |
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NLAS4717FCT1G | Bulk | 570,058 | 524 |
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onsemi NLAS4717FCT1IC SW SPDTX2 3.5OHM 10MICROBUMP |
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NLAS4717FCT1 | Reel | 3,000 |
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NLAS4717FCT1 | 10 |
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FLIP ELECTRONICS NLAS4717FCT1GIC SWITCH DUAL SPDT 10FLIPCHIP |
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NLAS4717FCT1G | Reel | 2,000 |
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onsemi NLAS4717FCT1GIC SW SPDTX2 3.5OHM 10MICROBUMP |
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NLAS4717FCT1G | Reel |
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NLAS4717FCT1G | Reel | 0 Weeks, 2 Days | 1,786 |
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NLAS4717FCT1G | 30,800 | 605 |
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NLAS4717FCT1G | 3,000 |
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NLAS4717FCT1G | 570,058 | 1 |
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NLAS4717FCT1G | 3,000 |
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NLAS4717FCT1G | 285,581 |
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NLAS4717FCT1 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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NLAS4717FCT1 |
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4.5 ohm High Bandwidth, Dual SPDT Analog Switch | Original | 94.93KB | 10 | |||
NLAS4717FCT1 |
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4.5 ohm High Bandwidth, Dual SPDT Analog Switch | Original | 78.34KB | 10 | |||
NLAS4717FCT1G |
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4.5 ohm High Bandwidth, Dual SPDT Analog Switch | Original | 78.34KB | 10 | |||
NLAS4717FCT1G |
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4.5 ohm High Bandwidth, Dual SPDT Analog Switch | Original | 94.94KB | 10 |
NLAS4717FCT1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NLAS4685 Pr oduct Preview Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring |
Original |
NLAS4685 Microbump-10 489AA NLAS4717 BAT54 NLAS4717 Micro10 | |
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D | |
MAX4717
Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
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Original |
NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G | |
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D | |
1500w audio amplifier circuit
Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
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SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G | |
Maxim Integrated Products
Abstract: MAX6377XR23-T MAX1692EUB MAX626CSA NCP1031DR2G MAX766 MAX6816EUS MAX762ESA MAX4420ESA MAX811SEUS-T
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Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro-10: NLAS4717/D | |
MAX4717
Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
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Original |
NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G | |
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D | |
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D | |
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D | |
MAX4717
Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2
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Original |
NLAS4717 NLAS4717 Micro-10: Microbump-10 489AA Micro-10 NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 | |
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D |