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    NM SMD TRANSISTOR Search Results

    NM SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NM SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4 Pin SMD Hall sensors

    Abstract: MLX90215EVA-ND SMD Hall sensors linear D smd transistor 3l US1881LSETR-NDNEW US1881LSETR-ND US4881EUA-ND SMD Hall sensors linear US5881LUA SMD-540
    Text: NEW! Fig. Package Semiconductor Peak Wave- Bandwidth length nm (nm) Photo Current Standard Typ. (µA) Dimensions in mm Ambient Light Sensors View Angle (°) 1 0805 SMD 550 450 ~ 610 12 120 1206 SMD 540 430 ~ 610 0.04 120 2 1206 SMD 570 360 ~ 970 50 120 3


    Original     		PDF 751-1056-1-ND 751-1056-2-ND 751-1051-1-ND 751-1051-2-ND 751-1055-1-ND 751-1055-2-ND 751-1057-ND 751-1058-ND 751-1059-ND UA-92 4 Pin SMD Hall sensors MLX90215EVA-ND SMD Hall sensors linear D smd transistor 3l US1881LSETR-NDNEW US1881LSETR-ND US4881EUA-ND SMD Hall sensors linear US5881LUA SMD-540

    CL200IR

    Abstract: No abstract text available
    Text: 表面実装型 チップフォトトランジスタ CPTシリーズ Surface Mountable Chip Photo-transistor CPT Series CPT-182シリーズ Surface Mountable Chip Photo-transistor CPT-182 Series •外形寸法図/Outline drawing ■Features 1. 全機種ともSMD（表面実装デバイス）


    Original     		PDF CPT182 CPT-182 CL-200IR CL200IR CL-200IR 20mW/Sr 10mW/Sr

    SPT36-C

    Abstract: No abstract text available
    Text: SPT36-C TECHNICAL DATA Silicone Photo-Transistor, SMD package SPT36-C is a surface mount type photo-transistor containing a chip with 0.6x0.6 mm active area, mounted into a ceramic package and covered with silicone. This device is featuring excellent responsibility of 20 µs and a high photocurrent. It’s designed to be easy of setting up optically with


    Original     		PDF SPT36-C SPT36-C 1000Lx

    Untitled

    Abstract: No abstract text available
    Text: ●●●●●●●●●● チップフォトトランジスタ CPT Series Chip Photo-transistor CPT Series • 特徴 Features 1. 全機種ともSMD（表面実装デバイス） タイプのチップ型フォトトランジス タです。 2. チップマウンターによるプリント基


    Original     		PDF CL201IR CL-201IR 20mW/Sr 10mW/Sr CL-201IR JAPAN2010

    Untitled

    Abstract: No abstract text available
    Text: ●●●●●●●●●● チップフォトトランジスタ CPT Series Chip Photo-transistor CPT Series • 特徴 Features 1. 全機種ともSMD（表面実装デバイス） タイプのチップ型フォトトランジス タです。 2. チップマウンターによるプリント基


    Original     		PDF CL201IR CL-201IR 20mW/Sr 10mW/Sr CL-201IR JAPAN2012

    Untitled

    Abstract: No abstract text available
    Text: ●●●●●●●●●● チップフォトトランジスタ CPT Series Chip Photo-transistor CPT Series • 特徴 Features 1. 全機種ともSMD（表面実装デバイス） タイプのチップ型フォトトランジス タです。 2. チップマウンターによるプリント基


    Original     		PDF CL-201IR CL-201IR CL201IR 20mW/Sr 10mW/Sr JAPAN2010

    phototransistor application lux meter

    Abstract: TEPT5600 TEMT6000 TEPT4400 tept5700 schematic photo sensor me smd transistor Ambient Light Sensor TEMT6200F analog output Ambient light sensor
    Text: a nd D eve lop me nt K it Sensor Features and Benefits • 5-mm and 3-mm leaded, 0805 and 1206 surface-mount packages • Filtering epoxy option virtually eliminates infrared influence • Photo transistor output with simple, two-pin connection • Big power savings in mobile devices by measuring the ambient light


    Original     		PDF RS-232 TEMT6000 TEMT6200F VSA-PT0043-0609 phototransistor application lux meter TEPT5600 TEPT4400 tept5700 schematic photo sensor me smd transistor Ambient Light Sensor analog output Ambient light sensor

    Untitled

    Abstract: No abstract text available
    Text: ●●●●●●●●●● チップフォトトランジスタ CPT Series Chip Photo-transistor CPT Series • 特徴 Features 1. 全機種ともSMD（表面実装デバイス） タイプのチップ型フォトトランジス タです。 2. チップマウンターによるプリント基


    Original     		PDF CL-201IR CL-201IR CL201IR 20mW/Sr 10mW/Sr JAPAN2012

    CL-200IR

    Abstract: No abstract text available
    Text: 表面実装型 チップフォトトランジスタ CPT-230シリーズ Surface Mountable Chip Photo-transistor CPT-230 Series 1.7 3.2 素子位置 Position of die (0.5) •Features 1. チップ型フォトトランジスタで上面 及び下面実装可能。


    Original     		PDF CPT290 CPT-290 CL-200IR CL200IR CL-200IR 20mW/Sr 10mW/Sr

    Transistors smd mark code

    Abstract: RPM-075PTT86 14 mark code transistor smd o3 smd transistor infrared emitters and detectors 3mm INFRARED EMITTER SIR-563ST3F SIM-20ST "photo transistor" 3V IC LINEAR SMD
    Text: OPTOELECTRONICS PHOTO SENSORS INFRA-RED EMITTERS & DETECTORS A range of matching infra-red LEDs and photo transistor detectors available in a choice of packages. EMITTERS - LEDs Case & Viewing Angle Peak Wavelength nm Forward Voltage VF Output Power Dimensions mm


    Original     		PDF SIM-012ST 100mA SIR-34ST3F SIR-341ST3F SIR-341ST3F RPT-34PB3F RPM-20PB RPM-22PB Transistors smd mark code RPM-075PTT86 14 mark code transistor smd o3 smd transistor infrared emitters and detectors 3mm INFRARED EMITTER SIR-563ST3F SIM-20ST "photo transistor" 3V IC LINEAR SMD

    4221 transistor datasheet

    Abstract: smd transistor NJ "photo transistor" ir PHOTO TRANSISTOR
    Text: NEW Dialight Surface Mount LED IR Photo Transistor 1.91 [.075] .806 [.032] 597-4221-2xx 2.79 [.110] PART NO.* 597-4221-2xx TAPING SPECIFICATIONS rear side of tape 2.21 [.087] 2.00 [.079] .806 [.032] 4.00 [.157] 1.00 [.039] 3.20 [.126] 3.40 [.134] 8.00


    Original     		PDF 597-4221-2xx MIL-STD-202E, 4221 transistor datasheet smd transistor NJ "photo transistor" ir PHOTO TRANSISTOR

    infrared emitting diode led 1050-nm

    Abstract: IR Touch Screen smd 5s transistor infrared touch screen smd diode 5s KST-0315A KEL-0315C smd transistor nm NM smd transistor NM
    Text: NEW PRODUCT Touch Screen 용 Infrared LED & Photo Transistor 개발 Description The KEL-0315C is a ultra bright light & surface mount type infrared emitting diode. And the KST-0315A is a high-sensitivity and surface mount type silicon phototransistor. They're ideal fo


    Original     		PDF KEL-0315C KST-0315A 10mW/cm infrared emitting diode led 1050-nm IR Touch Screen smd 5s transistor infrared touch screen smd diode 5s smd transistor nm NM smd transistor NM

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PT008-SMC PHOTO-TRANSISTOR PT008-SMC SMD TYPE PHOTO-TRANSISTOR PT008-SMC is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6x0.6mm active area mounted in a ceramic package and covered with silicone.


    Original     		PDF PT008-SMC PT008-SMC 1000Lx

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PT008-SMC PHOTO-TRSNSISTOR PT008-SMC SMD TYPE PHOTO-TRANSISTOR PT008-SMC is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6*0.6mm active area mounted in a ceramic package and covered with silicone or epoxy resin.


    Original     		PDF PT008-SMC PT008-SMC 1000Lx

    Untitled

    Abstract: No abstract text available
    Text: 表面実装型チップフォトトランジスタ CPT-290 シリーズ Surface Mountable Chip Photo-transistor CPT-290 Series • 用途／ Application 1. Optical touch panel 2. Position detecting of other equipment 1. 光学式タッチパネル。 2. その他の位置検出。


    Original     		PDF CPT290 CPT290 CL-201IR CL201IR CL-201IR 20mW/Sr 10mW/Sr

    Untitled

    Abstract: No abstract text available
    Text: 表面実装型チップフォトトランジスタ CPT-290 シリーズ Surface Mountable Chip Photo-transistor CPT-290 Series • 用途／ Application 1. Optical touch panel 2. Position detecting of other equipment 1. 光学式タッチパネル。 2. その他の位置検出。


    Original     		PDF CPT290 CPT290 CL201IR CL-201IR 20mW/Sr 10mW/Sr CL-201IR

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead CDIP2-T28

    HC6364

    Abstract: No abstract text available
    Text: b3E D MSS1Ô7E ÜGQD^a T Mb Honeywell IH0N3 8K x 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES OTHER RADIATION Fabricated using DESC Approved QML 1.2 nm RICMOS1“ Process • Listed on SMD #5962-38294. Available as MIL-l-38535 QML Class Q and Class V Total Dose Hardness through


    OCR Scan     		PDF HC6364 MIL-l-38535 1x10s 1x101 1x109 1x10eto 36-LEAD 28-LEAD HC6364/1 HC6364

    socket g34 pinout

    Abstract: smd marking WMM
    Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02


    OCR Scan     		PDF HC6664 1x10s 1x1014N/cm2 1x109 MIL-l-38535 36-LE 28-LEAD HC6364/1 socket g34 pinout smd marking WMM

    BPX81-4

    Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
    Text: SIEMENS BPX81 2-10 TRANSISTOR ARRAYS BPX82-89, 80 SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX82-89, SO BPX81 Dimension “A” . Part No. Min. .141 (3.6) .1 2 6 (3 .2 ) Max. BPX 82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291


    OCR Scan     		PDF BPX81 BPX82-89, BPX82 76K130 18-pln 023SbQS BPX81-4 BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array

    bvc62

    Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
    Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum


    OCR Scan     		PDF BLV859 OT262B 711002b OT262B. 711Dfi5b bvc62 transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330

    transistor A25 SMD

    Abstract: transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314
    Text: ü iä H W S & ' y y y * h VzjyVTs^ C P T - 2 9 5 / U — X _ Surface Mountable Chip Photo-transistor CPT-290 Series Features 1. f Ä 7 D f R ] ^ ö ' p ZJj - h 1. Developed as a chip type SMD photo­ transistor for both reverse and top


    OCR Scan     		PDF CPT-290 100ST2 L-201IR CL-201 transistor A25 SMD transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314

    GaAs 1000 nm Infrared Diode,

    Abstract: No abstract text available
    Text: Infrared Products Explanation o f Part Number: H I CD R B _5 © A A - @ ® • _c @ 1.Infrared products kinds: HIR: infrared emitter. HPD: photo diode. HPT: photo transistor. 2.Shape distinguish: B: bell round type. R: rectangular type. MIB: miniature bell type.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: C P T - 1 8 2 2 / U - X Surface Mountable Chip Photo-transistor CPT-182 Series W M / Features — r Developed as a chip tyoe SMD photo­ transistor for both right-angle and upright uses Small and square size, dimensions' 3.2 L X2.4(W ) x 2.4(H)mm 2. ^ ^ È t t 3 . 2 ( L ) X 2 . 4 ( W ) x 2 . 4


    OCR Scan     		PDF CPT-182 950nmlR CL-201 CL-201IR