Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NOR GATE 24V Search Results

    NOR GATE 24V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    NOR GATE 24V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2267A EMH2418R N-Channel Power MOSFET 24V, 9A, 15mΩ, Dual EMH8 http://onsemi.com Electrical Connection Features N-channel • Low On-resistance 2.5V drive  Common-Drain Type  Protection diode in  Built-in gate protection resistor


    Original
    PDF ENA2267A EMH2418R A2267-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2267 EMH2418R Advance Information http://onsemi.com N-Channel Power MOSFET 24V, 9A, 15mΩ, Dual EMH8 Electrical Connection Features N-channel • Low On-resistance 2.5V drive  Common-Drain Type  Protection diode in  Built-in gate protection resistor


    Original
    PDF A2267 EMH2418R A2267-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2314 ECH8695R Advance Information http://onsemi.com N-Channel Power MOSFET 24V, 11A, 9.1mΩ, Dual ECH8 Common Drain Features • Low On-resistance • 2.5V drive • Common-drain type • Protection diode in • Built-in gate protection resistor


    Original
    PDF A2314 ECH8695R A2314-5/5

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2314A ECH8695R N-Channel Power MOSFET 24V, 11A, 9.1mΩ, Dual ECH8 Common Drain http://onsemi.com Features • Low On-resistance  2.5V drive  Common-drain type  Protection diode in  Built-in gate protection resistor Best suited for LiB charging and discharging switch


    Original
    PDF ENA2314A ECH8695R 900mm2ï A2314-5/5

    FET2

    Abstract: No abstract text available
    Text: Ordering number : EN*A2292 EFC4626R Advance Information http://onsemi.com N-Channel Power MOSFET 24V, 5A, 46.2mΩ, Dual EFCP Features • 2.5V drive • Protection diode in • Common-drain type • 2KV ESD HBM • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch


    Original
    PDF A2292 EFC4626R 5000mm2Ã A2292-6/6 FET2

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2243 ECH8697R N-Channel Power MOSFET 24V, 10A, 11.6mΩ, Dual ECH8 Common Drain http://onsemi.com Features • Low On-resistance • 2.5V drive • Common-Drain Type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch


    Original
    PDF ENA2243 ECH8697R A2243-5/5

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2292A EFC4626R N-Channel Power MOSFET 24V, 5A, 46.2mΩ, Dual EFCP http://onsemi.com Features • 2.5V drive  Protection diode in  Common-drain type  2KV ESD HBM  Halogen free compliance Applications  Lithium-ion battery charging and discharging switch


    Original
    PDF ENA2292A EFC4626R 5000mm2ï A2292-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2179 EFC4619R Power MOSFET 24V, 6A, 23m N-Channel Dual EFCP ht t p://onse m i.c om Features • 2.5V drive • Common-drain type • 2KV ESD HBM • Protection diode in • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch


    Original
    PDF ENA2179 EFC4619R 5000mm2Ã A2179-9/9

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2224 CPH6636R N-Channel Power MOSFET 24V, 6A, 20mΩ, Dual CPH6 Common Drain http://onsemi.com Features • Low On-resistance • Best suited for LiB charging and discharging switch • With a built-in gate resistor • Protection diode in


    Original
    PDF ENA2224 CPH6636R 900mm2Ã A2224-5/5

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2179 EFC4619R Power MOSFET 24V, 6A, 23mΩ N-Channel Dual EFCP http://onsemi.com Features • 2.5V drive • Common-drain type • 2KV ESD HBM • Protection diode in • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch


    Original
    PDF ENA2179 EFC4619R 5000mm2Ã A2179-9/9

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2180 EFC4621R Power MOSFET 24V, 9A, 18m N-Channel Dual EFCP ht t p://onse m i.c om Features • 2.5V drive • Common-drain type • 2KV ESD HBM • Protection diode in • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch


    Original
    PDF ENA2180 EFC4621R 5000mm2Ã A2180-9/9

    EFC4621R

    Abstract: No abstract text available
    Text: Ordering number : ENA2180 EFC4621R Power MOSFET 24V, 9A, 18mΩ N-Channel Dual EFCP http://onsemi.com Features • 2.5V drive • Common-drain type • 2KV ESD HBM • Protection diode in • Halogen free compliance Applications • Lithium-ion battery charging and discharging switch


    Original
    PDF ENA2180 EFC4621R 5000mm2Ã A2180-9/9 EFC4621R

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2208A ECH8693R N-Channel Power MOSFET http://onsemi.com 24V, 14A, 7mΩ, Dual ECH8 Common Drain Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch


    Original
    PDF ENA2208A ECH8693R 900mm2Ã A2208-5/5

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2208 ECH8693R N-Channel Power MOSFET http://onsemi.com 24V, 14A, 7mΩ, Dual ECH8 Common Drain Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch


    Original
    PDF ENA2208 ECH8693R 900mm2Ã A2208-5/5

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2180A EFC4621R Power MOSFET 24V, 9A, 18mΩ N-Channel Dual EFCP http://onsemi.com Features • 2.5V drive  Common-drain type  2KV ESD HBM  Protection diode in  Halogen free compliance Applications  Lithium-ion battery charging and discharging switch


    Original
    PDF ENA2180A EFC4621R 5000mm2ï A2180-9/9

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2151A EFC6601R N-Channel Power MOSFET http://onsemi.com 24V, 13A, 11.5mΩ, Single EFCP Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF ENA2151A EFC6601R 5000mm2Ã A2151-8/8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2151A EFC6601R N-Channel Power MOSFET http://onsemi.com 24V, 13A, 11.5mΩ, Dual EFCP Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF ENA2151A EFC6601R PW10s, 5000mm2 A2151-8/8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2320 EFC4630R Advance Information http://onsemi.com N-Channel Power MOSFET 24V, 6A, 45mΩ, Dual EFCP Features • Common-drain type • 2.5V drive • Halogen free compliance • Built-in gate protection resistor • Best suited for LiB charging and discharging switch


    Original
    PDF ENA2320 EFC4630R 5000mm2Ã A2320-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1010A ECH8651R N-Channel Power MOSFET http://onsemi.com 24V, 10A, 14mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch


    Original
    PDF ENA1010A ECH8651R PW10s, 900mm2 A1010-7/7

    P60NH2LL

    Abstract: No abstract text available
    Text: STP60NH2LL N-CHANNEL 24V - 0.010 Ω - 40A TO-220 ULTRA LOW GATE CHARGE STripFET POWER MOSFET Table 1: General Features VDSS 24 V TYPE STP60NH2LL • ■ ■ ■ ■ ■ Figure 1:Package RDS on < 0.011 Ω ID 40 A(*) TYPICAL RDS(on) = 0.01 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 4.5 V


    Original
    PDF O-220 STP60NH2LL STP60NH2LL P60NH2LL

    STP100NH02L

    Abstract: No abstract text available
    Text: STP100NH02L N-CHANNEL 24V - 0.0052 Ω - 60A TO-220 STripFET III POWER MOSFET TYPE STP100NH02L • ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A (2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original
    PDF STP100NH02L O-220 STP100NH02L

    STD70NH02LT4

    Abstract: D70NH02L STD70NH02L
    Text: STD70NH02L N-CHANNEL 24V - 0.0062 W - 60A DPAK STripFET III POWER MOSFET TYPE STD70NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.008 W 60 A(*) TYPICAL RDS(on) = 0.0062 W @ 10 V TYPICAL RDS(on) = 0.008 W @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original
    PDF STD70NH02L O-252) O-252 STD70NH02L STD70NH02LT4 D70NH02L

    STD110NH02LT4

    Abstract: D110NH02L STD110NH02L
    Text: STD110NH02L N-CHANNEL 24V - 0.0044 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD110NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.005 Ω 80 A(2) TYPICAL RDS(on) = 0.0044 Ω @ 10 V TYPICAL RDS(on) = 0.0056 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original
    PDF STD110NH02L O-252) O-252 STD110NH02L STD110NH02LT4 D110NH02L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PA2373T1P Dual Drain common , N-channel MOSFET R07DS0674EJ0101 Rev.1.01 Aug 19, 2013 24V, 6A, 23.0mΩ DESCRIPTION The μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source. The μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for


    Original
    PDF PA2373T1P R07DS0674EJ0101 PA2373T1P