NP100 Search Results

NP100P06PDG

Abstract: NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY

Contextual Info: Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

np100n04nuj

Contextual Info: Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

MP-25ZP

Abstract: NP100N04PUK NP100
Contextual Info: Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

13000 transistor TO-220

Abstract: 100N04 np100n04mdh NP100N04PDH MP-25ZP NP100N04NDH S100BR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N04MDH, NP100N04NDH, NP100N04PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N04MDH, NP100N04NDH, NP100N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

NP100P04PLG-E1-AY

Abstract: MP-25ZP NP100P04PLG NP100P04PLG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P04PLG-E1-AY

NP100P04PDG

Abstract: NP100P04PDG-E2-AY MP-25ZP NP100P04PDG-E1-AY PT1200
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P04PDG-E1-AY

100N04

Abstract: NP100N04MUH NP100N04NUH NP100N04PUH MP-25ZP D1880 transistor marking code ak
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N04MUH, NP100N04NUH, NP100N04PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N04MUH, NP100N04NUH, NP100N04PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

transistor 7350

Contextual Info: Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

100N055

Abstract: NP100N055MDH NP100N055PDH 100n05 NP100N055NDH NP100N055PDH-E1-AY MP-25ZP NP100N055PDH-E1 NP100N055NDH-S18-AY D1880
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N055MDH, NP100N055NDH, NP100N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

NP100P06PLG

Abstract: MP-25ZP NP100P06PLG-E1-AY NP100P06PLG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PLG-E1-AY

LVDS connector 20 pins LCD 13.3

Abstract: LVDS connector 40 pins LCD 13.3 40 pins ide connector TPM Trusted Platform Module USB RealTek RTL8111C FCBGA 437
Contextual Info: NP100-N16C Intel 945GSE Mini-ITX Board PROCESSOR I/O CONNECTORS • Intel® AtomTM N270 processor • 1.6GHz core frequency, 1.10V voltage • 2.5W thermal design power • 512KB on-die second level cache • 533MHz FSB • 22x22 mm, 1.0 mm ball pitch and 437 balls FCBGA

ECG NTE semiconductor manual

Abstract: NEC UPD 833 R 608 G NEC uPD 833 D784217 09 0119 00 05 D784218
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT u P D 7 8 4 2 1 7 ,7 8 4 2 1 8 16/8-BIT SINGLE-CHIP MICROCONTROLLERS The /¿PD784218 is a member of the ¿/PD784218 Subseries of the 78K/IV Series. Besides a high-speed and highperformance CPU, it features various peripheral hardware such as ROM, RAM, I/O ports, 8-bit resolution A/D and

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a

78078Y

Abstract: uPD78076 uPD78076Y uPD78078 uPD78078Y uPD78P078Y U12326E UPD78078YGF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD78076Y, 78078Y 8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The µPD78076Y and 78078Y add the I 2C bus control function to the µ PD78076 and 78078, and are suitable for application in AV products. Besides a high-speed, high-performance CPU, these microcontrollers have internal ROM, RAM, I/O ports,

uPD784216

Abstract: uPD78078 uPD784214 uPD784216Y uPD78F4216 P91-P95
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD784214,784215,784216 16/8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD784216 is a member of the µPD784216 Subseries of the 78K/IV Series. Besides a high-speed and highperformance CPU, it features various peripheral hardware such as ROM, RAM, I/O ports, 8-bit resolution A/D and

uPD784026

Abstract: uPD784038Y uPD784907 uPD784908 uPD78P4908 uPD78P4908GF
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

UPD789830P

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD789830 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µPD789830 is an ASSP microcontroller in the 78K/0S series and is intended for use in card readers. A bare chip version of the µPD789830 is also available. This microcontroller has an internal dot LCD driver 40

PD789124A

Abstract: SP Series
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD78F9831 8-BIT SINGLE-CHIP MICROCONTROLLER The µPD78F9831 is an 8-bit single-chip microcontroller for LCD driving of the 78K/0S series. The µPD78F9831 is produced by replacing the internal ROM of the µPD789830 with larger flash memory.

NP100P04PDG

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

uPD784216

Abstract: uPD78F4216 uPD78F4216GC-8EU uPD78F4216GF-3BA UPD78F4216GC
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD78F4216 16/8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The µPD78F4216 is a product in the µPD784216 subseries in the 78K/IV series. The µPD78F4216 has a flash memory in the place of the internal ROM of the µPD784216. Data can be written

NP100P06PDG

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid