NP60 Search Results

D16861

Abstract: NP60N04KUG
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP60N04KUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP60N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER

np60n055muk

Abstract: NP60N055M
Contextual Info: Preliminary Data Sheet NP60N055MUK, NP60N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0598EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance

NEC 60N04

Abstract: 60n04 NP60N04MUG NP60N04MUG-S18-AY D1866 np60n04mug-s18 NEC+60N04 NEC LOT CODE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP60N04MUG-S18-AY LEAD PLATING

d16861

Abstract: NP60N04KUG D1686
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04KUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP60N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP60N04KUG TO-263 MP-25ZK

Contextual Info: Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100 Rev.1.00 Nov 24, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP60N055VUK R07DS0588EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

D16861

Abstract: NP60N04KUG
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04KUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP60N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP60N04KUG

NP60N03KUG

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N03KUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP60N03KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP60N03KUG TO-263 MP-25ZK

Contextual Info: Preliminary Data Sheet NP60N04MUK, NP60N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP60N055VUK R07DS0588EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

np60n04muk

Contextual Info: Preliminary Data Sheet NP60N04MUK, NP60N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0597EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100 Rev.1.00 Nov 24, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

NP60N04HLF

Abstract: NP60N04ILF
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04HLF,NP60N04ILF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP60N04HLF and NP60N04ILF are N-channel PART NUMBER PACKAGE MOS Field Effect Transistors designed for high current NP60N04HLF

60n03

Abstract: 60N03 m 60N03 UG 60N03 to NP60N03S NP60N03SUG D19547EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP60N03SUG-E1-AY NP60N03SUG-E2-AY

smd code marking NEC

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Contextual Info: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part

NP60N04MUG

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

LM-103-C004

Contextual Info: LM-103-C004 635nm Diode Laser Module Multi purpose, high quality, low cost red laser diode line generating module. Driver electronics already included. Laser class IIIA device Specifications 25°C Min. Optical CW Output Power PO Center Wavelength λC Output Aparture

LM-102-H130

Contextual Info: LM-102-H130 TECHNICAL DATA IR Diode Laser Module LM-102-H130 is a multi purpose, low cost, small size infrared diode laser module, featuring a brass housing with embedded focusable lens, and driver electronics. Features • • • Small size Ø 9.8 x 26.0 mm

LM-101-A102

Contextual Info: LM-101-A102 650nm Diode Line Laser Module Multi purpose, high quality, low cost red laser diode line generating module. Driver electronics already included. Laser class II device Specifications 25°C Min. Optical CW Output Power PO Center Wavelength λC

np-60

Abstract: NP60 1000maH
Contextual Info: data sheet system: Lithium-Ion-Battery nominal voltage: 3,7V end charge voltage: 4,2V max. charge current: 950mA charge conditions standard charge: fast charge: charging method: 475mA for 3,5h min. 950mA for 2,5h min. CC-CV constant current and constant voltage

2sk4145

Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current

RTL8192

Abstract: RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308
Contextual Info: Point LABEL-LOGO BEZEL-ODD KNOB-ODD LENS-ODD HDD Componet BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A Object description LABEL-LOGO_SAMSUNG;NP,SEC,ARTPAPER+OPP COATING,-,-,-,-,W

2sk4145

Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
Contextual Info: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)